265 research outputs found
Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
Three-dimensional (3D) topological insulators (TI) are novel quantum
materials with insulating bulk and topologically protected metallic surfaces
with Dirac-like band structure. The spin-helical Dirac surface states are
expected to host exotic topological quantum effects and find applications in
spintronics and quantum computation. The experimental realization of these
ideas requires fabrication of versatile devices based on bulk-insulating TIs
with tunable surface states. The main challenge facing the current TI materials
exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which
remains unsolved despite extensive efforts involving nanostructuring, chemical
doping and electrical gating. Here we report a novel approach for engineering
the band structure of TIs by molecular beam epitaxy (MBE) growth of
(Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy
(ARPES) and transport measurements show that the topological surface states
exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1),
indicating the robustness of bulk Z2 topology. Most remarkably, the systematic
band engineering leads to ideal TIs with truly insulating bulk and tunable
surface state across the Dirac point that behave like one quarter of graphene.
This work demonstrates a new route to achieving intrinsic quantum transport of
the topological surface states and designing conceptually new TI devices with
well-established semiconductor technology.Comment: Minor changes in title, text and figures. Supplementary information
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Ultra-low carrier concentration and surface dominant transport in Sb-doped Bi2Se3 topological insulator nanoribbons
A topological insulator is a new state of matter, possessing gapless
spin-locking surface states across the bulk band gap which has created new
opportunities from novel electronics to energy conversion. However, the large
concentration of bulk residual carriers has been a major challenge for
revealing the property of the topological surface state via electron transport
measurement. Here we report surface state dominated transport in Sb-doped
Bi2Se3 nanoribbons with very low bulk electron concentrations. In the
nanoribbons with sub-10nm thickness protected by a ZnO layer, we demonstrate
complete control of their top and bottom surfaces near the Dirac point,
achieving the lowest carrier concentration of 2x10^11/cm2 reported in
three-dimensional (3D) topological insulators. The Sb-doped Bi2Se3
nanostructures provide an attractive materials platform to study fundamental
physics in topological insulators, as well as future applications.Comment: 5 pages, 4 figures, 1 tabl
Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons
The universal conductance fluctuations (UCFs), one of the most important
manifestations of mesoscopic electronic interference, have not yet been
demonstrated for the two-dimensional surface state of topological insulators
(TIs). Even if one delicately suppresses the bulk conductance by improving the
quality of TI crystals, the fluctuation of the bulk conductance still keeps
competitive and difficult to be separated from the desired UCFs of surface
carriers. Here we report on the experimental evidence of the UCFs of the
two-dimensional surface state in the bulk insulating Bi2Te2Se nanoribbons. The
solely-B\perp-dependent UCF is achieved and its temperature dependence is
investigated. The surface transport is further revealed by weak
antilocalizations. Such survived UCFs of the topological surface states result
from the limited dephasing length of the bulk carriers in ternary crystals. The
electron-phonon interaction is addressed as a secondary source of the surface
state dephasing based on the temperature-dependent scaling behavior
Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3
Topological insulators represent a new state of quantum matter attractive to
both fundamental physics and technological applications such as spintronics and
quantum information processing. In a topological insulator, the bulk energy gap
is traversed by spin-momentum locked surface states forming an odd number of
surface bands that possesses unique electronic properties. However, transport
measurements have often been dominated by residual bulk carriers from crystal
defects or environmental doping which mask the topological surface
contribution. Here we demonstrate (BixSb1-x)2Te3 as a tunable topological
insulator system to manipulate bulk conductivity by varying the Bi/Sb
composition ratio. (BixSb1-x)2Te3 ternary compounds are confirmed as
topological insulators for the entire composition range by angle resolved
photoemission spectroscopy (ARPES) measurements and ab initio calculations.
Additionally, we observe a clear ambipolar gating effect similar to that
observed in graphene using nanoplates of (BixSb1-x)2Te3 in
field-effect-transistor (FET) devices. The manipulation of carrier type and
concentration in topological insulator nanostructures demonstrated in this
study paves the way for implementation of topological insulators in
nanoelectronics and spintronics.Comment: 7 pages, 4 figure
Control over topological insulator photocurrents with light polarization
Three-dimensional topological insulators represent a new quantum phase of
matter with spin-polarized surface states that are protected from
backscattering. The static electronic properties of these surface states have
been comprehensively imaged by both photoemission and tunneling spectroscopies.
Theorists have proposed that topological surface states can also exhibit novel
electronic responses to light, such as topological quantum phase transitions
and spin-polarized electrical currents. However, the effects of optically
driving a topological insulator out of equilibrium have remained largely
unexplored experimentally, and no photocurrents have been measured. Here we
show that illuminating the topological insulator Bi2Se3 with circularly
polarized light generates a photocurrent that originates from topological
helical Dirac fermions, and that reversing the helicity of the light reverses
the direction of the photocurrent. We also observe a photocurrent that is
controlled by the linear polarization of light, and argue that it may also have
a topological surface state origin. This approach may allow the probing of
dynamic properties of topological insulators and lead to novel opto-spintronic
devices.Comment: Accepted in Nature Nanotechnology, November 2 201
Genome-Wide Association Study Identifies Risk Loci for Cluster Headache
OBJECTIVE: To identify susceptibility loci for cluster headache and obtain insights into relevant disease pathways. METHODS: We carried out a genome-wide association study, where 852 UK and 591 Swedish cluster headache cases were compared with 5,614 and 1,134 controls, respectively. Following quality control and imputation, single variant association testing was conducted using a logistic mixed model, for each cohort. The two cohorts were subsequently combined in a merged analysis. Downstream analyses, such as gene-set enrichment, functional variant annotation, prediction and pathway analyses, were performed. RESULTS: Initial independent analysis identified two replicable cluster headache susceptibility loci on chromosome 2. A merged analysis identified an additional locus on chromosome 1 and confirmed a locus significant in the UK analysis on chromosome 6, which overlaps with a previously known migraine locus. The lead single nucleotide polymorphisms were rs113658130 (p = 1.92 x 10-17 , OR [95%CI] = 1.51 [1.37-1.66]) and rs4519530 (p = 6.98 x 10-17 , OR = 1.47 [1.34-1.61]) on chromosome 2, rs12121134 on chromosome 1 (p = 1.66 x 10-8 , OR = 1.36 [1.22-1.52]) and rs11153082 (p = 1.85 x 10-8 , OR = 1.30 [1.19-1.42]) on chromosome 6. Downstream analyses implicated immunological processes in the pathogenesis of cluster headache. INTERPRETATION: We identified and replicated several genome-wide-significant associations supporting a genetic predisposition in cluster headache in a genome-wide association study involving 1,443 cases. Replication in larger independent cohorts combined with comprehensive phenotyping, in relation to e.g. treatment response and cluster headache subtypes, could provide unprecedented insights into genotype-phenotype correlations and the pathophysiological pathways underlying cluster headache
Clinical and prognostic analysis of hepatitis B virus infection in diffuse large B-cell lymphoma
<p>Abstract</p> <p>Background</p> <p>Hepatitis B virus (HBV) infection in diffuse large B-cell lymphoma (DLBCL) patients is a common complication in China. However, the clinical relevance of HBV infection with respect to DLBCL disease stages and patient survival remains unclear. The main objective of the current study was to analyze the clinical features and to evaluate the prognostic factors of HBV infection in DLBCL patients.</p> <p>Methods</p> <p>In this retrospective study, DLBCL patients were divided into two groups as HBsAg-positive (n = 81) and HBsAg-negative (n = 181) patients. The HBsAg-positive patients were further divided into two subgroups based on their hepatic function during chemotherapy. Various statistical analyses were used to determine the significance of the relevant clinical parameters.</p> <p>Results</p> <p>Compared with the HBsAg-negative group, the HBsAg-positive DLBCL group displayed a younger median onset age (46 year vs 51), more advanced stage at grade III/IV (58% vs 42%, p = 0.016), and more frequent hepatic dysfunction before (21% vs 5.5%, p < 0.001) and during (49.4% vs 16.6%, p < 0.001) chemotherapy. Female DLBCL patients exhibited a higher frequency of HBsAg positivity (p = 0.006). However, in both groups the median overall survival (OS) duration (55.8 vs 66.8 months) and response rates (91% vs 90.4%) were similar. In the HBsAg-positive DLBCL group, the poor prognostic factors were advanced stage (p < 0.001) and hepatic dysfunction during chemotherapy (p = 0.02). The OS of HBsAg-positive patients with hepatic dysfunction during chemotherapy was significantly shorter than those without liver dysfunction (p = 0.016), and the OS rates at 3 years were 48% and 72%, respectively. The use of rituximab did not increase the rates of liver dysfunction in HBsAg-positive DLBCL patients.</p> <p>Conclusion</p> <p>Compared with HBsAg-negative patients, the HBsAg-positive DLBCL patients had earlier onset and more advanced stage. The disease stage and hepatic dysfunction during chemotherapy and were two significant prognostic factors in the HBsAg-positive DLBCL patients. This study suggests that prophylactic treatment of HBV may be of great importance in the cases of HBsAg-positive patients.</p
Jet energy measurement with the ATLAS detector in proton-proton collisions at root s=7 TeV
The jet energy scale and its systematic uncertainty are determined for jets measured with the ATLAS detector at the LHC in proton-proton collision data at a centre-of-mass energy of âs = 7TeV corresponding to an integrated luminosity of 38 pb-1. Jets are reconstructed with the anti-kt algorithm with distance parameters R=0. 4 or R=0. 6. Jet energy and angle corrections are determined from Monte Carlo simulations to calibrate jets with transverse momenta pTâ„20 GeV and pseudorapidities {pipe}η{pipe}<4. 5. The jet energy systematic uncertainty is estimated using the single isolated hadron response measured in situ and in test-beams, exploiting the transverse momentum balance between central and forward jets in events with dijet topologies and studying systematic variations in Monte Carlo simulations. The jet energy uncertainty is less than 2. 5 % in the central calorimeter region ({pipe}η{pipe}<0. 8) for jets with 60â€pT<800 GeV, and is maximally 14 % for pT<30 GeV in the most forward region 3. 2â€{pipe}η{pipe}<4. 5. The jet energy is validated for jet transverse momenta up to 1 TeV to the level of a few percent using several in situ techniques by comparing a well-known reference such as the recoiling photon pT, the sum of the transverse momenta of tracks associated to the jet, or a system of low-pT jets recoiling against a high-pT jet. More sophisticated jet calibration schemes are presented based on calorimeter cell energy density weighting or hadronic properties of jets, aiming for an improved jet energy resolution and a reduced flavour dependence of the jet response. The systematic uncertainty of the jet energy determined from a combination of in situ techniques is consistent with the one derived from single hadron response measurements over a wide kinematic range. The nominal corrections and uncertainties are derived for isolated jets in an inclusive sample of high-pT jets. Special cases such as event topologies with close-by jets, or selections of samples with an enhanced content of jets originating from light quarks, heavy quarks or gluons are also discussed and the corresponding uncertainties are determined. © 2013 CERN for the benefit of the ATLAS collaboration
Measurement of the cross-section of high transverse momentum vector bosons reconstructed as single jets and studies of jet substructure in pp collisions at âs = 7 TeV with the ATLAS detector
This paper presents a measurement of the cross-section for high transverse momentum W and Z bosons produced in pp collisions and decaying to all-hadronic final states. The data used in the analysis were recorded by the ATLAS detector at the CERN Large Hadron Collider at a centre-of-mass energy of âs = 7 TeV;{\rm Te}{\rm V}4.6\;{\rm f}{{{\rm b}}^{-1}}{{p}_{{\rm T}}}\gt 320\;{\rm Ge}{\rm V}|\eta |\lt 1.9{{\sigma }_{W+Z}}=8.5\pm 1.7$ pb and is compared to next-to-leading-order calculations. The selected events are further used to study jet grooming techniques
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