Operation and performance of the ATLAS semiconductor tracker

The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74±0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, δ-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations

Sequential linearization approach for solving mixed-discrete nonlinear design optimization problems

Journal of mechanisms, transmissions, and automation in design1133325-334JMTD

Computational implementation and tests of a sequential linearization algorithm for mixed-discrete nonlinear design optimization

Journal of mechanisms, transmissions, and automation in design1133335-345JMTD

CoOOH nanosheets on cobalt substrate as a non-enzymatic glucose sensor

10.1016/j.elecom.2012.04.012Electrochemistry Communications201128-132ECCM

CoOOH nanosheet electrodes: Simple fabrication for sensitive electrochemical sensing of hydrogen peroxide and hydrazine

10.1016/j.bios.2012.07.061Biosensors and Bioelectronics391255-260BBIO

Co/Al layered double hydroxides nanostructures: A binderless electrode for electrochemical capacitor

10.1016/j.elecom.2014.03.001Electrochemistry Communications439-12ECCM

Raman scattering study of LO phonon-plasmon coupled modes in p-type InGaAs

© 2015 Elsevier B.V. We present a Raman scattering study of LO phonon-coupled modes in Be-doped, p-type In0.53Ga0.47As with hole densities ranging from 2.2×1017 to 2.4×1019 cm-3. Two separate phonon-like coupled modes are observed in the optical-phonon spectral region, corresponding to InAs-like and GaAs-like overdamped modes. With increasing free-hole density, these modes exhibit a redshift and their frequencies approach the respective TO frequencies. Unlike the case of n-type material, no high-frequency L+ coupled mode could be detected. The Raman spectra are analyzed using a dielectric model based on the Lindhard-Mermin susceptibility that takes into account HH and LH intraband transitions as well as HH-LH interband transitions. The model yields good quality fits to the experimental spectra. It is shown that the inter-valence-band processes introduces an additional damping channel that causes the L+ mode to be damped out. The comparison between the Raman spectra and the theoretical line-shape calculations suggests the presence of a residual strain and a reduced sublattice interaction in the most heavily doped samples.This work has been supported by the Spanish Ministry of Economy and Competitiveness under contract MAT2010-16116Peer Reviewe