191 research outputs found

    Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

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    This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. By refiningthe fabrication techniques, using a self-aligned gate-last process, scaled10-20 nm diameters are achieved for balanced drive currents at Ion ∼ 100μA/μm, considering Ioff at 100 nA/μm (VDD = 0.5 V). This is enabledby greatly improved p-type MOSFET performance reaching a maximumtransconductance of 260 μA/μm at VDS = 0.5 V. Lowered power dissipationfor CMOS circuits requires good threshold voltage VT matching of the n- andp-type device, which is also demonstrated for basic inverter circuits. Thevarious effects contributing to VT-shifts are also studied in detail focusing onthe InAs channel devices (with highest transconductance of 2.6 mA/μm), byusing Electron Holography and a novel gate position variation method (PaperV).The advancements in all-III-V CMOS integration spawned individual studiesinto the strengths of the n- and p-type III-V devices, respectively. Traditionallymaterials such as InAs and InGaAs provide excellent electrontransport properties, therefore they are frequently used in devices for highfrequency RF applications. In contrast, the III-V p-type alternatives have beenlacking performance mostly due to the difficult oxidation properties of Sb-based materials. Therefore, a study of the GaSb properties, in a MOSFETchannel, was designed and enabled by new manufacturing techniques, whichallowed gate-length scaling from 40 to 140 nm for p-type Sb-based MOSFETs(Paper III). The new fabrication method allowed for integration of deviceswith symmetrical contacts as compared to previous work which relied on atunnel-contact at the source-side. By modelling based on measured data fieldeffecthole mobility of 70 cm2/Vs was calculated, well in line with previouslyreported studies on GaSb nanowires. The oxidation properties of the GaSbgate-stack was further characterized by XPS, where high intensities of xraysare achieved using a synchrotron source allowed for characterization ofnanowires (Paper VI). Here, in-situ H2-plasma treatment, in parallel with XPSmeasurements, enabled a study of the time-dependence during full removalof GaSb native oxides.The last focus of the thesis was building on the existing strengths of verticalheterostructure III-V n-type (InAs-InGaAs graded channel) devices. Typically,these devices demonstrate high-current densities (gm >3 mS/μm) and excellentmodulation properties (off-state current down to 1 nA/μm). However,minimizing the parasitic capacitances, due to various overlaps originatingfrom a low access-resistance design, has proven difficult. Therefore, newmethods for spacers in both the vertical and planar directions was developedand studied in detail. The new fabrication methods including sidewall spacersachieved gate-drain capacitance CGD levels close to 0.2 fF/μm, which isthe established limit by optimized high-speed devices. The vertical spacertechnology, using SiO2 on the nanowire sidewalls, is further improved inthis thesis which enables new co-integration schemes for memory arrays.Namely, the refined sidewall spacer method is used to realize selective recessetching of the channel and reduced capacitance for large array memoryselector devices (InAs channel) vertically integrated with Resistive RandomAccess Memory (RRAM) memristors. (Paper IV) The fabricated 1-transistor-1-memristor (1T1R) demonstrator cell shows excellent endurance and retentionfor the RRAM by maintaining constant ratio of the high and low resistive state(HRS/LRS) after 106 switching cycles

    Ambulanspersonals beskrivning av kompetens och utbildningsbehov angående luftvägshantering i Region Skåne

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    Bakgrund: Inom ambulanssjukvården kan personalen behöva behandla patienter med ofri luftväg. Studier visar att omfattande utbildning och repetition krävs för att kunna hantera en ofri luftväg. Syfte: Undersöka hur ambulanspersonal i Region Skåne uppskattade sin nuvarande kompetens och utbildningsbehov. Metod: Studien genomfördes med en kvantitativ ansats i form av en enkätstudie. Beräkningar har utförts med statistikprogrammet SPSS. Resultat: Enkäten besvarades av 123 respondenter i tre av fyra ambulansdistrikt. Totalt 69.9% (n=86) anser att det inte erbjuds tillräckligt med utbildning och 22.0% (n=27) har upplevt att den tillgängliga kompetensen varit otillräcklig. Respondenterna föredrar intubation som slutgiltig lösning för att säkra en ofri luftväg trots det är det denna metod som störst andel av personalen känner sig osäker på. Ambulanspersonalen uppger till 72.0% (n=79) att man aldrig tar hänsyn till personalens luftvägsdelegering när ambulanserna bemannas. Slutsats: Författarna anser att verksamheten skulle ha ett större fokus på luftvägsutbildning för att på så sätt öka personalens kompetens

    Tentative detection of the gravitational magnification of type Ia supernovae

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    The flux from distant type Ia supernovae (SN) is likely to be amplified or de-amplified by gravitational lensing due to matter distributions along the line-of-sight. A gravitationally lensed SN would appear brighter or fainter than the average SN at a particular redshift. We estimate the magnification of 26 SNe in the GOODS fields and search for a correlation with the residual magnitudes of the SNe. The residual magnitude, i.e. the difference between observed and average magnitude predicted by the "concordance model" of the Universe, indicates the deviation in flux from the average SN. The linear correlation coefficient for this sample is r=0.29. For a similar, but uncorrelated sample, the probability of obtaining a correlation coefficient equal to or higher than this value is ~10%, i.e. a tentative detection of lensing at ~90% confidence level. Although the evidence for a correlation is weak, our result is in accordance with what could be expected given the small size of the sample.Comment: 7 pages, 2 figure

    S i ärmen - Test av Richard D

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    Med vår studie ville vi undersöka om teorin hur företag ska hantera hyperkonkurrens var applicerbar och användbar på den svenska virtuella spelmarknaden. Vi ville även se om modifieringar kunde göras för att öka dess användbarhet. Först utförde vi en förstudie som bestod av en marknadsanalys på vår utvalda marknad för att undersöka ifall den karaktäriseras av hyperkonkurrens. Denna låg till grund för vår huvudstudie som är utförd med en deduktiv ansats. Genom hypoteser testade vi om Richard D’Avenis teori, om hur man hanterar och skapar fördelar i hyperkonkurrens, var applicerbar och användbar på företag verksamma på den svenska virtuella spelmarknaden. Empiriska undersökningen genomfördes främst med semistrukturerade intervjuer, men även med sekundärdata som komplement. Den svenska virtuella spelmarknaden kännetecknas av hyperkonkurrens. Richard D’Avenis teori var inte användbar fullt ut på denna marknad, vilket skapade utrymme för modifiering

    Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance.

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    Thin vertical nanowires based on III-V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as well as contact resistance, adequate characterization techniques for resolving doping distribution within thin vertical nanowires are required. We present a novel method of axially probing the doping profile by systematically changing the gate position, at a constant gate length L g of 50 nm and a channel diameter of 12 nm, along a vertical nanowire MOSFET and utilizing the variations in threshold voltage V T shift (∼100 mV). The method is further validated using the well-established technique of electron holography to verify the presence of the doping profile. Combined, device and material characterizations allow us to in-depth study the origin of the threshold voltage variability typically present for metal organic chemical vapor deposition (MOCVD)-grown III-V nanowire devices

    Quantification of DNA-associated proteins inside eukaryotic cells using single-molecule localization microscopy

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    Development of single-molecule localization microscopy techniques has allowed nanometre scale localization accuracy inside cells, permitting the resolution of ultra-fine cell structure and the elucidation of crucial molecular mechanisms. Application of these methodologies to understanding processes underlying DNA replication and repair has been limited to defined in vitro biochemical analysis and prokaryotic cells. In order to expand these techniques to eukaryotic systems, we have further developed a photo-activated localization microscopy-based method to directly visualize DNA-associated proteins in unfixed eukaryotic cells. We demonstrate that motion blurring of fluorescence due to protein diffusivity can be used to selectively image the DNA-bound population of proteins. We designed and tested a simple methodology and show that it can be used to detect changes in DNA binding of a replicative helicase subunit, Mcm4, and the replication sliding clamp, PCNA, between different stages of the cell cycle and between distinct genetic backgrounds

    Esophageal perforation in South of Sweden: Results of surgical treatment in 125 consecutive patients

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    <p>Abstract</p> <p>Background</p> <p>For many years there has been a debate as to which is the method of choice in treating patients with esophageal perforation. The literature consists mainly of small case series. Strategies for aiding patients struck with this disease is changing as new and less traumatic treatment options are developing. We studied a relatively large consecutive material of esophageal perforations in an effort to evaluate prognostic factors, diagnostic efforts and treatment strategy in these patients.</p> <p>Methods</p> <p>125 consecutive patients treated at the University Hospital of Lund from 1970 to 2006 were studied retrospectively. Prognostic factors were evaluated using the Cox proportional hazards model.</p> <p>Results</p> <p>Pre-operative ASA score was the only factor that significantly influenced outcome. Neck incision for cervical perforation (n = 8) and treatment with a covered stent with or without open drainage for a thoracic perforation (n = 6) had the lowest mortality. Esophageal resection (n = 8) had the highest mortality. A CAT scan or an oesophageal X-ray with oral contrast were the most efficient diagnostic tools. The preferred treatment strategy changed over the course of the study period, from a more aggressive surgical approach towards using covered stents to seal the perforation.</p> <p>Conclusion</p> <p>Pre-operative ASA score was the only factor that significantly influenced outcome in this study. Treatment strategies are changing as less traumatic options have become available. Sealing an esophageal perforation with a covered stent, in combination with open or closed drainage when necessary, is a promising treatment strategy.</p

    The Fourteenth Data Release of the Sloan Digital Sky Survey: First Spectroscopic Data from the extended Baryon Oscillation Spectroscopic Survey and from the second phase of the Apache Point Observatory Galactic Evolution Experiment

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    The fourth generation of the Sloan Digital Sky Survey (SDSS-IV) has been in operation since July 2014. This paper describes the second data release from this phase, and the fourteenth from SDSS overall (making this, Data Release Fourteen or DR14). This release makes public data taken by SDSS-IV in its first two years of operation (July 2014-2016). Like all previous SDSS releases, DR14 is cumulative, including the most recent reductions and calibrations of all data taken by SDSS since the first phase began operations in 2000. New in DR14 is the first public release of data from the extended Baryon Oscillation Spectroscopic Survey (eBOSS); the first data from the second phase of the Apache Point Observatory (APO) Galactic Evolution Experiment (APOGEE-2), including stellar parameter estimates from an innovative data driven machine learning algorithm known as "The Cannon"; and almost twice as many data cubes from the Mapping Nearby Galaxies at APO (MaNGA) survey as were in the previous release (N = 2812 in total). This paper describes the location and format of the publicly available data from SDSS-IV surveys. We provide references to the important technical papers describing how these data have been taken (both targeting and observation details) and processed for scientific use. The SDSS website (www.sdss.org) has been updated for this release, and provides links to data downloads, as well as tutorials and examples of data use. SDSS-IV is planning to continue to collect astronomical data until 2020, and will be followed by SDSS-V.Comment: SDSS-IV collaboration alphabetical author data release paper. DR14 happened on 31st July 2017. 19 pages, 5 figures. Accepted by ApJS on 28th Nov 2017 (this is the "post-print" and "post-proofs" version; minor corrections only from v1, and most of errors found in proofs corrected

    Compartmental Genomics in Living Cells Revealed by Single-Cell Nanobiopsy

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    The ability to study the molecular biology of living single cells in heterogeneous cell populations is essential for next generation analysis of cellular circuitry and function. Here, we developed a single-cell nanobiopsy platform based on scanning ion conductance microscopy (SICM) for continuous sampling of intracellular content from individual cells. The nanobiopsy platform uses electrowetting within a nanopipette to extract cellular material from living cells with minimal disruption of the cellular milieu. We demonstrate the subcellular resolution of the nanobiopsy platform by isolating small subpopulations of mitochondria from single living cells, and quantify mutant mitochondrial genomes in those single cells with high throughput sequencing technology. These findings may provide the foundation for dynamic subcellular genomic analysis

    The life history of 21 breast cancers.

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    Cancer evolves dynamically as clonal expansions supersede one another driven by shifting selective pressures, mutational processes, and disrupted cancer genes. These processes mark the genome, such that a cancer's life history is encrypted in the somatic mutations present. We developed algorithms to decipher this narrative and applied them to 21 breast cancers. Mutational processes evolve across a cancer's lifespan, with many emerging late but contributing extensive genetic variation. Subclonal diversification is prominent, and most mutations are found in just a fraction of tumor cells. Every tumor has a dominant subclonal lineage, representing more than 50% of tumor cells. Minimal expansion of these subclones occurs until many hundreds to thousands of mutations have accumulated, implying the existence of long-lived, quiescent cell lineages capable of substantial proliferation upon acquisition of enabling genomic changes. Expansion of the dominant subclone to an appreciable mass may therefore represent the final rate-limiting step in a breast cancer's development, triggering diagnosis
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