The Photodissociation of 8B^8B and the Solar Neutrino Problem

The extraction of the photodissociation cross sections of $^8B$ from Coulomb dissociation experiments is investigated. A careful study is done on the contributions of the E1, E2 and M1 multipolarities to the breakup. A comparison with the data of a recent experiment is performed. It is shown that the extraction of the radiative capture cross sections $^7Be(p,\ \gamma)^8B$ which are relevant for the solar neutrino problem is not affected appreciably by Coulomb reacceleration. A non-perturbative model is used for the purpose. Emphasis is put on the perspectives for future experiments which are planned at the University of Notre Dame, RIKEN (Japan), and GSI (Germany). An analysis of the total yields of ``photon-point" processes in inelastic electron scattering is also done.Comment: 23 pages, plain Latex. 12 figures available upon request

Spin-Momentum Correlations in Quasi-Elastic Electron Scattering from Deuterium

We report on a measurement of spin-momentum correlations in quasi-elastic scattering of longitudinally polarized electrons with an energy of 720 MeV from vector-polarized deuterium. The spin correlation parameter $A^V_{ed}$ was measured for the $^2 \vec{\rm H}(\vec e,e^\prime p)n$ reaction for missing momenta up to 350 MeV/$c$ at a four-momentum transfer squared of 0.21 (GeV/c)$^2$. The data give detailed information about the spin structure of the deuteron, and are in good agreement with the predictions of microscopic calculations based on realistic nucleon-nucleon potentials and including various spin-dependent reaction mechanism effects. The experiment demonstrates in a most direct manner the effects of the D-state in the deuteron ground-state wave function and shows the importance of isobar configurations for this reaction.Comment: 4 pages, 3 figures, submitted to Phys. Rev. Lett. for publicatio

High-Temperature Electronic Materials: Silicon Carbide and Diamond

The physical and chemical properties of wide-band-gap semiconductors make these materials an ideal wide bandgapsemiconductor choice for device fabrication for applications in many different areas, e.g. light emitters, high-temperature and high-power electronics, high-power microwave devices, micro-electromechanical system (MEM) technology, and substrates for semiconductor preparation. These semiconductors have micro-electromechanical system (MEMS) been recognized for several decades as being suitable for these applications, but until recently the low material quality has not allowed the fabrication of high-quality devices. In this material quality chapter, we review the wide-band-gap semiconductors, silicon carbide and diamond. Silicon carbide electronics is advancing from the research stage to commercial production. The commercial availability of single-crystal SiC substrates during the early 1990s gave rise to intense activity in the development of silicon carbide devices. The commercialization started with the release of blue light-emitting diode (LED). The recent release of high-power Schottky diodes was a further demonstration of the progress made towards defect-free SiC substrates. Diamond has superior physical and chemical properties. Silicon-carbide- and diamond-based diamondsilicon carbide (SiC) electronics are at different stages of development. The preparation of high-quality single-crystal substrates of wafer size has allowed recent significant progress in the fabrication of several types of devices, and the development has reached many important milestones. However, high-temperature studies are still scarce, and diamond-based electronics is still in its infancy