Multijunction photovoltaics: integrating III–V semiconductor heterostructures on silicon

International audienceGallium arsenide phosphide nitride shows promise for developing highefficiency tandem solar cells on low-cost silicon substrate

GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

International audienceGaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1µm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1µm and 0.3µm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising

Design of a lattice-matched III-V-N/Si photovoltaic tandem cell monolithically integrated on silicon substrate

International audienceIn this paper, we present a comprehensive study of high efficiencies tandem solar cells monolithically grown on a silicon substrate using GaAsPN absorber layer. InGaAs(N) quantum dots and GaAsPN quantum wells have been grown recently on GaP/Si susbstrate for applications related to light emission. For photovoltaic applications, we consider the GaAsPN diluted nitride alloy as the top junction material due to both its perfect lattice matching with Si and ideal bandgap energy for current generation in association with the Si bottom cell. Numerical simulation of the top cell is performed. The effect of layer thicknesses and doping on the cell efficiency are evidenced. In these structures a tunnel junction (TJ) is needed to interconnect both the top and bottom sub-cells. We compare the simulated performances of different TJ structures and show that the GaP(n+)/Si(p+) TJ is promising to improve performances of the current-voltage characteristic

Large-Area, Flexible, Lead-Free Sn-Perovskite Solar Modules

For the first time, large-area, flexible organic–inorganic tin perovskite solar modules are fabricated by means of an industry-compatible and scalable blade-coating technique. An 8-cell interconnected mini module with dimensions of 25 cm2 (active area = 8 × 1.5 cm2) reached 5.7% power conversion efficiency under 1000 W/m2 (AM 1.5G) and 9.4% under 2000 lx (white-LED).This project received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement no. 862656 (project DROP-IT) and of Generalitat Valenciana under the Print-P (MFA/2022/020) project

DFT and k * p modelling of the phase transitions of lead and tin halide perovskites for photovoltaic cells

Published online 30 october 2013. This work was performed using HPC resources from GENCI-CINES/IDRIS grant 2013-c2013096724.International audience3D hybrid organic perovskites, CH3NH3PbX3 (X = halogen), have recently been used to strongly improve the efficiency of dye sensitized solar cells (DSSC) leading to a new class of low-cost mesoscopic solar cells. CsSnI3 perovskite can also be used for hole conduction in DSSC. Density functional theory and GW corrections are used to compare lead and tin hybrid and all-inorganic perovskites. The room temperature optical absorption is associated to electronic transitions between the spin-orbit split-off band in the conduction band and the valence band. Spin-orbit coupling is about three times smaller for tin. Moreover, the effective mass of relevant band edge hole states is small (0.17). The high temperature phase sequence of CsSnI3 leading to the room temperature orthorhombic phase and the recently reported phases of CH3NH3MI3 (where M = Pb, Sn) close to the room temperature, are also studied. Tetragonal distortions from the ideal cubic phase are analysed by a k * p perturbation, including spin-orbit effect. In addition, the non-centrosymmetric phases of CH3NH3MI3 exhibit a splitting of the electronic bands away from the critical point. The present work shows that their physical properties are more similar to conventional semiconductors than to the absorbers used in DSS

Abrupt GaP/Si hetero-interface using bistepped Si buffer

We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth

Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications

San Francisco, California, United StatesInternational audienceLattice-matched GaP-based nanostructures grown on silicon substrates is a highly rewarded route for coherent integration of photonics and high-efficiency photovoltaic devices onto silicon substrates. We report on the structural and optical properties of selected MBE-grown nanostructures on both GaP substrates and GaP/Si pseudo-substrates. As a first stumbling block, the GaP/Si interface growth has been optimised thanks to a complementary set of thorough structural analyses. Photoluminescence and time-resolved photoluminescence studies of self-assembled (In,Ga)As quantum dots grown on GaP substrate demonstrate a proximity of two different types of optical transitions interpreted as a competition between conduction band states in X and Γ valleys. Structural properties and optical studies of GaAsP(N)/GaP(N) quantum wells coherently grown on GaP substrates and GaP/Si pseudo substrates are reported. Our results are found to be suitable for light emission applications in the datacom segment. Then, possible routes are drawn for larger wavelengths applications, in order to address the chip-to-chip and within-a-chip optical interconnects and the optical telecom segments. Finally, results on GaAsPN/GaP heterostructures and diodes, suitable for PV applications are reporte

Importance of Spin-Orbit Coupling in Hybrid Organic/Inorganic Perovskites for Photovoltaic Applications

International audienceThree-dimensional (3D) hybrid perovskites CH3NH3PbX3 (X = Br, I) have recently been suggested as new key materials for dye-sensitized solar cells (DSSC) leading to a new class of hybrid semiconductor photovoltaic cells (HSPC). Thanks to density functional theory calculations, we show that the band gap of these compounds is dominated by a giant spin-orbit coupling (SOC) in the conduction-band (CB). At room temperature, direct and isotropic optical transitions are associated to a spin-orbit split-off band related to the triply degenerated CB of the cubic lattice without SOC. Due to the strong SOC, the electronic states involved in the optical absorption are only slightly perturbed by local distortions of the lattice. In addition, band offset calculations confirm that CH3NH3PbX3/TiO2 is a reference material for driving electrons toward the electrode in HSPC. Two-dimensional (2D) hybrids are also suggested to reach further flexibility for light conversion efficiency. Our study affords the basic concepts to reach the level of knowledge already attained for optoelectronic properties of conventional semiconductors

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Solar energy conversion and photoinduced bioactive sensors are representing topical scientific fields, where interfaces play a decisive role for efficient applications. The key to specifically tune these interfaces is a precise knowledge of interfacial structures and their formation on the microscopic, preferably atomic scale. Gaining thorough insight into interfacial reactions, however, is particularly challenging in relevant complex chemical environment. This review introduces a spectrum of material systems with corresponding interfaces significant for efficient applications in energy conversion and sensor technologies. It highlights appropriate analysis techniques capable of monitoring critical physicochemical reactions in situ during non-vacuum preparation and photoactivity studies including well-defined inorganic epitaxial reference surfaces, buried interfaces, and low-defect nucleation of disjunct epitaxial materials that are analyzed during preparation in chemical vapor environment. Their surfaces are then modified and functionalized in gaseous and liquid environment. Finally, even more complex coupling of inorganic stable photoactive materials with responsive soft matter for bioactivity is reviewed. Interface formation, structure, and/or artificial photochemical interfacial reactions are scrutinized down to the atomic scale in real time, also accounting for equilibrium versus non-equilibrium, kinetically driven processes, in order to accelerate progresses in the realization of efficient energy materials and in the exploitation of photoinduced processes at interfaces