From vertex detectors to inner trackers with CMOS pixel sensors

The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming applications like the upgraded ALICE Inner Tracking System (ITS), which requires sensors with one order of magnitude improvement on readout speed and improved radiation tolerance. This triggered the exploration of a deeper sub-micron CMOS technology, Tower-Jazz 180 nm, for the design of a CPS well adapted for the new ALICE-ITS running conditions. This paper reports the R&D results for the conception of a CPS well adapted for the ALICE-ITS.Comment: 4 pages, 4 figures, VCI 2016 conference proceeding

R&D Paths of Pixel Detectors for Vertex Tracking and Radiation Imaging

This report reviews current trends in the R&D of semiconductor pixellated sensors for vertex tracking and radiation imaging. It identifies requirements of future HEP experiments at colliders, needed technological breakthroughs and highlights the relation to radiation detection and imaging applications in other fields of science.Comment: 17 pages, 2 figures, submitted to the European Strategy Preparatory Grou

SEIS: Insight's Seismic Experiment for Internal Structure of Mars.

By the end of 2018, 42 years after the landing of the two Viking seismometers on Mars, InSight will deploy onto Mars' surface the SEIS (Seismic Experiment for Internal Structure) instrument; a six-axes seismometer equipped with both a long-period three-axes Very Broad Band (VBB) instrument and a three-axes short-period (SP) instrument. These six sensors will cover a broad range of the seismic bandwidth, from 0.01 Hz to 50 Hz, with possible extension to longer periods. Data will be transmitted in the form of three continuous VBB components at 2 sample per second (sps), an estimation of the short period energy content from the SP at 1 sps and a continuous compound VBB/SP vertical axis at 10 sps. The continuous streams will be augmented by requested event data with sample rates from 20 to 100 sps. SEIS will improve upon the existing resolution of Viking's Mars seismic monitoring by a factor of ∼ 2500 at 1 Hz and ∼ 200 000 at 0.1 Hz. An additional major improvement is that, contrary to Viking, the seismometers will be deployed via a robotic arm directly onto Mars' surface and will be protected against temperature and wind by highly efficient thermal and wind shielding. Based on existing knowledge of Mars, it is reasonable to infer a moment magnitude detection threshold of M w ∼ 3 at 40 ∘ epicentral distance and a potential to detect several tens of quakes and about five impacts per year. In this paper, we first describe the science goals of the experiment and the rationale used to define its requirements. We then provide a detailed description of the hardware, from the sensors to the deployment system and associated performance, including transfer functions of the seismic sensors and temperature sensors. We conclude by describing the experiment ground segment, including data processing services, outreach and education networks and provide a description of the format to be used for future data distribution.Electronic supplementary materialThe online version of this article (10.1007/s11214-018-0574-6) contains supplementary material, which is available to authorized users

A review of advances in pixel detectors for experiments with high rate and radiation

The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog. Phy

PIXEL 2010 - a Resume

The Pixel 2010 conference focused on semiconductor pixel detectors for particle tracking/vertexing as well as for imaging, in particular for synchrotron light sources and XFELs. The big LHC hybrid pixel detectors have impressively started showing their capabilities. X-ray imaging detectors, also using the hybrid pixel technology, have greatly advanced the experimental possibilities for diiffraction experiments. Monolithic or semi-monolithic devices like CMOS active pixels and DEPFET pixels have now reached a state such that complete vertex detectors for RHIC and superKEKB are being built with these technologies. Finally, new advances towards fully monolithic active pixel detectors, featuring full CMOS electronics merged with efficient signal charge collection, exploiting standard CMOS technologies, SOI and/or 3D integration, show the path for the future. This r\'esum\'e attempts to extract the main statements of the results and developments presented at this conference.Comment: 8 pages, 19 figures, conference summar

Mapping the depleted area of silicon diodes using a micro-focused X-ray beam

For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -700 V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k{\Omega} cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source. For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied. The findings showed that the electric field in each diode under investigation extended beyond its bias ring and reached the dicing edge