Semiconductor Device Modeling and Simulation for Electronic Circuit Design

This chapter covers different methods of semiconductor device modeling for electronic circuit simulation. It presents a discussion on physics-based analytical modeling approach to predict device operation at specific conditions such as applied bias (e.g., voltages and currents); environment (e.g., temperature, noise); and physical characteristics (e.g., geometry, doping levels). However, formulation of device model involves trade-off between accuracy and computational speed and for most practical operation such as for SPICE-based circuit simulator, empirical modeling approach is often preferred. Thus, this chapter also covers empirical modeling approaches to predict device operation by implementing mathematically fitted equations. In addition, it includes numerical device modeling approaches, which involve numerical device simulation using different types of commercial computer-based tools. Numerical models are used as virtual environment for device optimization under different conditions and the results can be used to validate the simulation models for other operating conditions

Power Efficient Data-Aware SRAM Cell for SRAM-Based FPGA Architecture

The design of low-power SRAM cell becomes a necessity in today\u27s FPGAs, because SRAM is a critical component in FPGA design and consumes a large fraction of the total power. The present chapter provides an overview of various factors responsible for power consumption in FPGA and discusses the design techniques of low-power SRAM-based FPGA at system level, device level, and architecture levels. Finally, the chapter proposes a data-aware dynamic SRAM cell to control the power consumption in the cell. Stack effect has been adopted in the design to reduce the leakage current. The various peripheral circuits like address decoder circuit, write/read enable circuits, and sense amplifier have been modified to implement a power-efficient SRAM-based FPGA

Statistical compact model strategies for nano CMOS transistors subject of atomic scale variability

One of the major limiting factors of the CMOS device, circuit and system simulation in sub 100nm regimes is the statistical variability introduced by the discreteness of charge and granularity of matter. The statistical variability cannot be eliminated by tuning the layout or by tightening fabrication process control. Since the compact models are the key bridge between technology and design, it is necessary to transfer reliably the MOSFET statistical variability information into compact models to facilitate variability aware design practice. The aim of this project is the development of a statistical extraction methodology essential to capture statistical variability with optimum set of parameters particularly in industry standard compact model BSIM. This task is accomplished by using a detailed study on the sensitivity analysis of the transistor current in respect to key parameters in compact model in combination with error analysis of the fitted Id-Vg characteristics. The key point in the developed direct statistical compact model strategy is that the impacts of statistical variability can be captured in device characteristics by tuning a limited number of parameters and keeping the values for remaining major set equal to their default values obtained from the “uniform” MOSFET compact model extraction. However, the statistical compact model extraction strategies will accurately represent the distribution and correlation of the electrical MOSFET figures of merit. Statistical compact model parameters are generated using statistical parameter generation techniques such as uncorrelated parameter distributions, principal component analysis and nonlinear power method. The accuracy of these methods is evaluated in comparison with the results obtained from ‘atomistic’ simulations. The impact of the correlations in the compact model parameters has been analyzed along with the corresponding transistor figures of merit. The accuracy of the circuit simulations with different statistical compact model libraries has been studied. Moreover, the impact of the MOSFET width/length on the statistical trend of the optimum set of statistical compact model parameters and electrical figures of merit has been analyzed with two methods to capture geometry dependencies in proposed statistical models

Wide-Supply-Range All-Digital Leakage Variation Sensor for On-Chip Process and Temperature Monitoring

Variation in process, voltage and temperature is a major obstacle in achieving energy-efficient operation of LSI. This paper proposes an all-digital on-chip circuit to monitor leakage current variations of both of the nMOSFET and pMOSFET independently. As leakage current is highly sensitive to threshold voltage and temperature, the circuit is suitable for tracking process and temperature variation. The circuit uses reconfigurable inhomogeneity to obtain statistical properties from a single monitor instance. A compact reconfigurable inverter topology is proposed to implement the monitor circuit. The compact and digital nature of the inverter enables cell-based design, which will reduce design costs. Measurement results from a 65 nm test chip show the validity of the proposed circuit. For a 124 sample size for both of the nMOSFET and pMOSFET, the monitor area is 4500 μm2 and active power consumption is 76 nW at 0.8 V operation. The proposed technique enables area-efficient and low-cost implementation thus can be used in product chips for applications such as dynamic energy and thermal management, testing and post-silicon tuning

Fiabilisation de Convertisseurs Analogique-Num´erique a Modulation Sigma-Delta

Due to the continuously scaling down of CMOS technology, system-on-chips (SoCs) reliability becomes important in sub-90 nm CMOS node. Integrated circuits and systems applied to aerospace, avionic, vehicle transport and biomedicine are highly sensitive to reliability problems such as ageing mechanisms and parametric process variations. Novel SoCs with new materials and architectures of high complexity further aggravate reliability as a critical aspect of process integration. For instance, random and systematic defects as well as parametric process variations have a large influence on quality and yield of the manufactured ICs, right after production. During ICs usage time, time-dependent ageing mechanisms such as negative bias temperature instability (NBTI) and hot carrier injection (HCI) can significantly degrade ICs performance.La fiabilit´e des ICs est d´efinie ainsi : la capacit´e d’un circuit ou un syst`eme int´egr´e `amaintenir ses param`etres durant une p´eriode donn´ee sous des conditions d´efinies. Les rapportsITRS 2011 consid`ere la fiabilit´e comme un aspect critique du processus d’int´egration.Par cons´equent, il faut faire appel des m´ethodologies innovatrices prenant en comptela fiabilit´e afin d’assurer la fonctionnalit´e du SoCs et la fiabilit´e dans les technologiesCMOS `a l’´echelle nanom´etrique. Cela nous permettra de d´evelopper des m´ethodologiesind´ependantes du design et de la technologie CMOS, en revanche, sp´ecialis´ees en fiabilit´e

Fiabilisation de convertisseurs analogique-numérique à modulation Sigma-Delta

This thesis concentrates on reliability-aware methodology development, reliability analysis based on simulation as well as failure prediction of CMOS 65nm analog and mixed signal (AMS) ICs. Sigma-Delta modulators are concerned as the object of reliability study at system level. A hierarchical statistical approach for reliability is proposed to analysis the performance of Sigma-Delta modulators under ageing effects and process variations. Statistical methods are combined into this analysis flow.Ce travail de thèse a porté sur des problèmes de fiabilité de circuits intégrés en technologie CMOS 65 nm, en particulier sur la conception en vue de la fiabilité, la simulation et l'amélioration de la fiabilité. Les mécanismes dominants de vieillissement HCI et NBTI ainsi que la variation du processus ont été étudiés et évalués quantitativement au niveau du circuit et au niveau du système. Ces méthodes ont été appliquées aux modulateurs Sigma-Delta afin de déterminer la fiabilité de ce type de composant qui est très utilisé

Energy autonomous systems : future trends in devices, technology, and systems

The rapid evolution of electronic devices since the beginning of the nanoelectronics era has brought about exceptional computational power in an ever shrinking system footprint. This has enabled among others the wealth of nomadic battery powered wireless systems (smart phones, mp3 players, GPS, …) that society currently enjoys. Emerging integration technologies enabling even smaller volumes and the associated increased functional density may bring about a new revolution in systems targeting wearable healthcare, wellness, lifestyle and industrial monitoring applications

Advanced analog layout design automation in compliance with density uniformity

To fabricate a reliable integrated circuit chip, foundries follow specific design rules and layout processing techniques. One of the parameters, which affect circuit performance and final electronic product quality, is the variation of thickness for each semiconductor layer within the fabricated chips. The thickness is closely dependent on the density of geometric features on that layer. Therefore, to ensure consistent thickness, foundries normally have to seriously control distribution of the feature density on each layer by using post-processing operations. In this research, the methods of controlling feature density distribution on different layers of an analog layout during the process of layout migration from an old technology to a new one or updated design specifications in the same technology have been investigated. We aim to achieve density-uniformity-aware layout retargeting for facilitating manufacturing process in the advanced technologies. This can offer an advantage right to the design stage for the designers to evaluate the effects of applying density uniformity to their drafted layouts, which are otherwise usually done by the foundries at the final manufacturing stage without considering circuit performance. Layout modification for density uniformity includes component position change and size modification, which may induce crosstalk noise caused by extra parasitic capacitance. To effectively control this effect, we have also investigated and proposed a simple yet accurate analytic method to model the parasitic capacitance on multi-layer VLSI chips. Supported by this capacitance modeling research, a unique methodology to deal with density-uniformity-aware analog layout retargeting with the capability of parasitic capacitance control has been presented. The proposed operations include layout geometry position rearrangement, interconnect size modification, and extra dummy fill insertion for enhancing layout density uniformity. All of these operations are holistically coordinated by a linear programming optimization scheme. The experimental results demonstrate the efficacy of the proposed methodology compared to the popular digital solutions in terms of minimum density variation and acute parasitic capacitance control

Compact Models for Integrated Circuit Design

This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts