Reliability and Availability Evaluation of Wireless Sensor Networks for Industrial Applications

Wireless Sensor Networks (WSN) currently represent the best candidate to be adopted as the communication solution for the last mile connection in process control and monitoring applications in industrial environments. Most of these applications have stringent dependability (reliability and availability) requirements, as a system failure may result in economic losses, put people in danger or lead to environmental damages. Among the different type of faults that can lead to a system failure, permanent faults on network devices have a major impact. They can hamper communications over long periods of time and consequently disturb, or even disable, control algorithms. The lack of a structured approach enabling the evaluation of permanent faults, prevents system designers to optimize decisions that minimize these occurrences. In this work we propose a methodology based on an automatic generation of a fault tree to evaluate the reliability and availability of Wireless Sensor Networks, when permanent faults occur on network devices. The proposal supports any topology, different levels of redundancy, network reconfigurations, criticality of devices and arbitrary failure conditions. The proposed methodology is particularly suitable for the design and validation of Wireless Sensor Networks when trying to optimize its reliability and availability requirements

The complexity of asynchronous model based testing

This is the post-print version of the final paper published in Theoretical Computer Science. The published article is available from the link below. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. Copyright @ 2012 Elsevier B.V.In model based testing (MBT), testing is based on a model MM that typically is expressed using a state-based language such as an input output transition system (IOTS). Most approaches to MBT assume that communications between the system under test (SUT) and its environment are synchronous. However, many systems interact with their environment through asynchronous channels and the presence of such channels changes the nature of testing. In this paper we investigate the situation in which the SUT interacts with its environment through asynchronous channels and the problems of producing test cases to reach a state, execute a transition, or to distinguish two states. In addition, we investigate the Oracle Problem. All four problems are explored for both FIFO and non-FIFO channels. It is known that the Oracle Problem can be solved in polynomial time for FIFO channels but we also show that the three test case generation problems can also be solved in polynomial time in the case where the IOTS is observable but the general test generation problems are EXPTIME-hard. For non-FIFO channels we prove that all of the test case generation problems are EXPTIME-hard and the Oracle Problem in NP-hard, even if we restrict attention to deterministic IOTSs

Isolated oxygen defects in 3C- and 4H-SiC: A theoretical study

Ab initio calculations in the local-density approximation have been carried out in SiC to determine the possible configurations of the isolated oxygen impurity. Equilibrium geometry and occupation levels were calculated. Substitutional oxygen in 3C-SiC is a relatively shallow effective mass like double donor on the carbon site (O-C) and a hyperdeep double donor on the Si site (O-Si). In 4H-SiC O-C is still a double donor but with a more localized electron state. In 3C-SiC O-C is substantially more stable under any condition than O-Si or interstitial oxygen (O-i). In 4H-SiC O-C is also the most stable one except for heavy n-type doping. We propose that O-C is at the core of the electrically active oxygen-related defect family found by deep level transient spectroscopy in 4H-SiC. The consequences of the site preference of oxygen on the SiC/SiO2 interface are discussed