Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

Heteroepitaxial growth of silicon carbide (SiC) on graphene/SiO2/Si substrates was carried out using a home-made hot-mesh chemical vapor deposition (HM-CVD) apparatus. Monomethylsilane (MMS) was used as single source gas while hydrogen (H2) as carrier gas. The substrate temperature, tungsten mesh temperature, H2 flow rate and distance between mesh and substrate were fixed at 750 °C, 1700 °C, 100 sccm and 30 mm, respectively. The growth pressures were set to 1.2, 1.8 and 2.4 Torr. The growth of 3C-SiC (111) on graphene/SiO2/Si were confirmed by the observation of θ-2θ diffraction peak at 35.68°. The diffraction peak of thin film on graphene/SiO2/Si substrate at pressure growth is 1.8 Torr is relatively more intense and sharper than thin film grown at pressure growth 1.2 and 2.4 Torr, thus indicates that the quality of grown film at 1.8 Torr is better. The sharp and strong peak at 33° was observed on the all film grown, that peak was attributed Si(200) nanocrystal. The reason why Si (200) nanocrystal layer is formed is not understood. In principle, it can’t be denied that the low quality of the grown thin film is influenced by the capability of our home-made apparatus. However, we believe that the quality can be further increased by the improvement of apparatus design. As a conclusion, the growth pressures around 1.8 Torr seems to be the best pressures for the growth of heteroepitaxial 3C-SiC thin film

Pharmacokinetic drug interactions of antimicrobial drugs:a systematic review on oxazolidinones, rifamycines, macrolides, fluoroquinolones, and Beta-lactams

Like any other drug, antimicrobial drugs are prone to pharmacokinetic drug interactions. These drug interactions are a major concern in clinical practice as they may have an effect on efficacy and toxicity. This article provides an overview of all published pharmacokinetic studies on drug interactions of the commonly prescribed antimicrobial drugs oxazolidinones, rifamycines, macrolides, fluoroquinolones, and beta-lactams, focusing on systematic research. We describe drug-food and drug-drug interaction studies in humans, affecting antimicrobial drugs as well as concomitantly administered drugs. Since knowledge about mechanisms is of paramount importance for adequate management of drug interactions, the most plausible underlying mechanism of the drug interaction is provided when available. This overview can be used in daily practice to support the management of pharmacokinetic drug interactions of antimicrobial drugs

サイセイカンノシンケイ

京都大学0048新制・論文博士医学博士乙第1965号論医博第489号新制||医||167(附属図書館)2902UT51-47-B482(主査)教授 本庄 一夫, 教授 木村 忠司, 教授 伊藤 鉄夫学位規則第5条第2項該当Kyoto UniversityDA

Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition

Surface carbonization on Si(100) and Si(111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependences of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X-ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100 °C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr

Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane

The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good crystallinity and crystal orientation were successfully grown at 1100-1200°C. The crystallinity and the crystal orientation of SiC films grown at large dilution rate of above 200 and growth pressure of 0.3 - 0.7 Torr were better than those grown at small dilution rate and high growth pressure. Under large dilution rate, large amount of hydrogen radicals can be generated. It is speculated that excessive carbon atoms or weak bonds formed in SiC films were effectively extracted by the large amount of hydrogen radicals