3,622 research outputs found

    Local and Global Illumination in the Volume Rendering Integral

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    Enabling Simultaneous Extreme Ultra Low-k in Stiff, Resilient, and Thermally Stable Nano-Architected Materials

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    Low dielectric constant (low-k) materials have gained increasing popularity because of their critical role in developing faster, smaller, and higher performance devices. Their practical use has been limited by the strong coupling among mechanical, thermal, and electrical properties of materials and their dielectric constant; a low-k is usually attained by materials that are very porous, which results in high compliance, that is, silica aerogels; high dielectric loss, that is, porous polycrystalline alumina; and poor thermal stability, that is, Sr-based metal–organic frameworks. We report the fabrication of 3D nanoarchitected hollow-beam alumina dielectrics which k is 1.06–1.10 at 1 MHz that is stable over the voltage range of −20 to 20 V and a frequency range of 100 kHz to 10 MHz. This dielectric material can be used in capacitors and is mechanically resilient, with a Young’s modulus of 30 MPa, a yield strength of 1.07 MPa, a nearly full shape recoverability to its original size after >50% compressions, and outstanding thermal stability with a thermal coefficient of dielectric constant (TCK) of 2.43 × 10^(-5) K^(-1) up to 800 °C. These results suggest that nanoarchitected materials may serve as viable candidates for ultra low-k materials that are simultaneously mechanically resilient and thermally and electrically stable for microelectronics and devices

    Table 1.

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    Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for standard level gate drive source

    Novel Packet Switching for Green IP Networks

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    A green technology for reducing energy consumption has become a critical factor in ICT industries. However, for the telecommunications sector in particular, most network elements are not usually optimized for power efficiency. Here, we propose a novel energy-efficient packet switching method for use in an IP network for reducing unnecessary energy consumption. As a green networking approach, we first classify the network nodes into either header or member nodes. The member nodes then put the routing-related module at layer 3 to sleep under the assumption that the layer in the OSI model can operate independently. The entire set of network nodes is then partitioned into clusters consisting of one header node and multiple member nodes. Then, only the header node in a cluster conducts IP routing and its member nodes conduct packet switching using a specially designed identifier, a tag. To investigate the impact of the proposed scheme, we conducted a number of simulations using wellknown real network topologies and achieved a more energy-efficient performance than that achieved in previous studies.Peer reviewe

    Dynamic characteristics

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    Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits � Low conduction losses due to low on-state resistance � Suitable for high frequency applications due to fast switching characteristics 1.3 Application

    Static characteristics

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    Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits � Allows responsive temperature monitoring due to integrated temperature sensor � Low conduction losses due to low on-state resistance � Q101 compliant 1.3 Applications � 12 V and 24 V high power motor drives � Automotive and general purpose power switchin

    Job strain, health and sickness absence: results from the Hordaland Health Study

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    While it is generally accepted that high job strain is associated with adverse occupational outcomes, the nature of this relationship and the causal pathways involved are not well elucidated. We aimed to assess the association between job strain and long-term sickness absence (LTSA), and investigate whether any associations could be explained by validated health measures.Data from participants (n = 7346) of the Hordaland Health Study (HUSK), aged 40-47 at baseline, were analyzed using multivariate Cox regression to evaluate the association between job strain and LTSA over one year. Further analyses examined whether mental and physical health mediated any association between job strain and sickness absence.A positive association was found between job strain and risk of a LTSA episode, even controlling for confounding factors (HR = 1.64 (1.36-1.98); high job strain exposure accounted for a small proportion of LTSA episodes (population attributable risk 0.068). Further adjustments for physical health and mental health individually attenuated, but could not fully explain the association. In the fully adjusted model, the association between high job strain and LTSA remained significant (HR = 1.30 (1.07-1.59)).High job strain increases the risk of LTSA. While our results suggest that one in 15 cases of LTSA could be avoided if high job strain were eliminated, we also provide evidence against simplistic causal models. The impact of job strain on future LTSA could not be fully explained by impaired health at baseline, which suggests that factors besides ill health are important in explaining the link between job strain and sickness absence

    Spontaneous localization of bulk fields: the six-dimensional case

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    We study N=2 supersymmetric gauge theories with d=6d=6 bulk and d=4d=4 brane fields charged under a U(1) gauge symmetry. Radiatively induced Fayet-Iliopoulos terms lead to an instability of the bulk fields. We compute the profile of the bulk zero modes and observe the phenomenon of spontaneous localization towards the position of the branes. While this mechanism is quite similar to the d=5d=5 case, the mass spectrum of the excited Kaluza-Klein modes shows a crucial difference.Comment: 23 pages, 3 figure file
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