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Status of the CMS pixel project
The Compact Muon Solenoid Experiment (CMS) will start taking data at the Large Hadron Collider (LHC) in 2008. The closest detector to the interaction point is the silicon pixel detector which is the heart of the tracking system. It consists of three barrel layers and two pixel disks on each side of the interaction point for a total of 66 million channels. Its proximity to the interaction point means there will be very large particle fluences and therefore a radiation-tolerant design is necessary. The pixel detector will be crucial to achieve a good vertex resolution and will play a key role in pattern recognition and track reconstruction. The results from test beam runs prove that the expected performances can be achieved. The detector is currently being assembled and will be ready for insertion into CMS in early 2008. During the assembly phase, a thorough electronic test is being done to check the functionality of each channel to guarantee the performance required to achieve the physics goals. This report will present the final detector design, the status of the production as well as results from test beam runs to validate the expected performance
CMS Pixel Telescope Addition to T-980 Bent Crystal Collimation Experiment at the Tevatron
An enhancement to the T-980 bent crystal collimation experiment at the
Tevatron has been completed. The enhancement was the installation of a pixel
telescope inside the vacuum-sealed beam pipe of the Tevatron. The telescope is
comprised of six CMS PSI46 pixel plaquettes, arranged as three stations of
horizontal and vertical planes, with the CAPTAN system for data acquisition and
control. The purpose of the pixel telescope is to measure beam profiles
produced by bent crystals under various conditions. The telescope electronics
inside the beam pipe initially were not adequately shielded from the image
current of the passing beams. A new shielding approach was devised and
installed, which resolved the problem. The noise issues encountered and the
mitigating techniques are presented herein, as well as some preliminary results
from the telescope.Comment: 9 pp. 2nd International Conference on Technology and Instrumentation
in Particle Physics 2011: TIPP 2011. 9-14 Jun 2011. Chicago, Illinoi
A Test Stand System for High-Energy Physics Applications
The Front-End R&D group at Fermilab has been developing pixel hybridized modules and silicon strip detectors for the past decade for high-energy physics experiments. To accomplish this goal, one of the activities the group has been working on includes the development of a flexible high-speed and high-bandwidth data acquisition and test system to characterize front-end electronics. In this paper, we present a general purpose PCI-based test stand system developed to meet the stringent requirements of testing silicon strip and pixel detectors. The test stand is based on a platform that is flexible enough to be adapted to different types of front-end electronics. This system has been used to test the performance of the electronics for different experiments such as BTeV, CDF, CMS, and Phenix. The paper presents the capabilities of the system and how it can be adapted to meet the testing requirements of different applications
Radiation tolerance of the CMS forward pixel detector
In this paper we present some results on the radiation tolerance of the CMS forward pixel detector. They were obtained from a beam test at Fermilab of a pixel-detector module, which was previously irradiated up to a maximum dose of 45 Mrad of protons at 200 MeV. It is shown that CMS forward pixel detector can tolerate this radiation dose without any major deterioration of its performance. © 2008 Elsevier B.V
Measurement of the Forward-Backward Asymmetry in the B -> K(*) mu+ mu- Decay and First Observation of the Bs -> phi mu+ mu- Decay
We reconstruct the rare decays , , and in a data sample
corresponding to collected in collisions at
by the CDF II detector at the Fermilab Tevatron
Collider. Using and decays we report the branching ratios. In addition, we report
the measurement of the differential branching ratio and the muon
forward-backward asymmetry in the and decay modes, and the
longitudinal polarization in the decay mode with respect to the squared
dimuon mass. These are consistent with the theoretical prediction from the
standard model, and most recent determinations from other experiments and of
comparable accuracy. We also report the first observation of the {\mathcal{B}}(B^0_s \to
\phi\mu^+\mu^-) = [1.44 \pm 0.33 \pm 0.46] \times 10^{-6}27 \pm 6B^0_s$ decay observed.Comment: 7 pages, 2 figures, 3 tables. Submitted to Phys. Rev. Let
Measurements of the properties of Lambda_c(2595), Lambda_c(2625), Sigma_c(2455), and Sigma_c(2520) baryons
We report measurements of the resonance properties of Lambda_c(2595)+ and
Lambda_c(2625)+ baryons in their decays to Lambda_c+ pi+ pi- as well as
Sigma_c(2455)++,0 and Sigma_c(2520)++,0 baryons in their decays to Lambda_c+
pi+/- final states. These measurements are performed using data corresponding
to 5.2/fb of integrated luminosity from ppbar collisions at sqrt(s) = 1.96 TeV,
collected with the CDF II detector at the Fermilab Tevatron. Exploiting the
largest available charmed baryon sample, we measure masses and decay widths
with uncertainties comparable to the world averages for Sigma_c states, and
significantly smaller uncertainties than the world averages for excited
Lambda_c+ states.Comment: added one reference and one table, changed order of figures, 17
pages, 15 figure
Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC
The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 1034 cm–2s–1 and collect ~ 3000fb–1 of data. The innermost layer of the pixel detector will be exposed to doses of about 1016 neq/ cm2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented
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