19 research outputs found

    Automated Array Assembly, Phase 2

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    The purpose of the overall program is to establish technological readiness and provide verification for the elements of a manufacturing sequence which would ultimately be suitable for the large-scale production of silicon solar-array modules at a selling price of less than $500/kW. A program and process plan for accomplishing this objective was developed and put into operation. Three junction-formation processes are shown; since cost analysis shows that they do not differ greatly in cost, each should be considered for technical merits and possible future cost reduction. The progress made in the various process steps of the plan is described, and conclusions are presented

    Thin-film module circuit design: Practical and reliability aspects

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    This paper will address several aspects of the design and construction of submodules based on thin film amorphous silicon (a-Si) p i n solar cells. Starting from presently attainable single cell characteristics, and a realistic set of specifications, practical module designs are discussed from the viewpoints of efficient designs, the fabrication requirements, and reliability concerns. The examples center mostly on series interconnected modules of the superstrate type with detailed discussions of each portion of the structure in relation to its influence on module efficiency. Emphasis is placed on engineering topics such as: area coverage, optimal geometries, and cost and reliability. Practical constraints on achieving optimal designs, along with some examples of potential pitfalls in the manufacture and subsequent performance of a-Si modules are discussed

    Epitaxial silicon growth for solar cells

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    Growth and fabrication procedures for the baseline solar cells are described along with measured cell parameters, and the results. Reproducibility of these results was established and the direction to be taken for higher efficiency is identified

    Automated array assembly, phase 2

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    A manufacturing sequence which is capable of mass producing silicon solar cells is described. The sequence was arrived at after the evaluation of many processes and three related manufacturing sequences which are discussed

    Epitaxial solar-cell fabrication, phase 2

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    Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%

    Automated array assembly

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    A general technology assessment and manufacturing cost analysis was presented. A near-term (1982) factory design is described, and the results of an experimental production study for the large-scale production of flat-panel silicon and solar-cell arrays are detailed

    Epitaxial solar cells fabrication

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    Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer

    The genetic architecture of the human cerebral cortex

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    The cerebral cortex underlies our complex cognitive capabilities, yet little is known about the specific genetic loci that influence human cortical structure. To identify genetic variants that affect cortical structure, we conducted a genome-wide association meta-analysis of brain magnetic resonance imaging data from 51,665 individuals. We analyzed the surface area and average thickness of the whole cortex and 34 regions with known functional specializations. We identified 199 significant loci and found significant enrichment for loci influencing total surface area within regulatory elements that are active during prenatal cortical development, supporting the radial unit hypothesis. Loci that affect regional surface area cluster near genes in Wnt signaling pathways, which influence progenitor expansion and areal identity. Variation in cortical structure is genetically correlated with cognitive function, Parkinson's disease, insomnia, depression, neuroticism, and attention deficit hyperactivity disorder

    Automated Array Assembly, Phase 2

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    The large scale production of silicon solar cell array panels is discussed. The cost and performance of three manufacturing sequences designed to convert silicon sheet and wafers into solar panels is analyzed. The production of ion implanted and furnace annealed solar cells made using solar grade n- and p-type wafers is examined. The performance of production size lots is examined with regard to the relationship between the ion implant and furnace anneal parameters and the ability to form consistently good thick film screen printed contacts. The spray on antireflection coating process is evaluated. The performance of several lots of cells before and after coating is measured. The structure and refractive index of the RCA I (TiO2) coating is compared with commercial solutions. Sensitivity of coated, screen printed cells to the post heat treatment required to cure the films is assessed
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