Bistability and Electrical Characterisation of Two Terminal Non-Volatile Polymer Memory Devices.

Polymer blended with nanoparticle and ferroelectric materials in two terminal memory devices has potential for electronic memory devices that may offer increased storage capacity and performance. Towards understanding the memory performance of a combination of an organic polymer with a ferroelectric or unpolarised material, this research is concerned with testing the memory programming and capacitance of these materials using two-terminal memory device structures. This research contributes to previous investigation into the internal working mechanisms of polymer memory devices and increases understanding and verifies the principles of these mechanisms through testing previously untested materials in different material compositions. This study makes a novel contribution by testing the electrical bistability of new materials; specifically, nickel oxide, barium titanate and methylammonium lead bromide and considers their properties which include nanoparticles, ferroelectric, perovskite structures and organic-inorganic composition. Due to their material properties which have different implications for internal switching and memory storage. Nanoparticles have a greater band gap between the valence band and conduction band compare to bulk material which is exploited for memory storage and ferroelectric properties and perovskite materials have non-volatile properties suitable for switching mechanisms. Specific attributes of memory function which include charging mechanism, device programming, capacitance and charge retention were tested for different material compositions which included, blend and layered with a PVAc polymer, and as a bulk material with a single crystal structure using MIM memory devices and MIS device structures. The results showed that nickel oxide was the most effective material as a blend with the polymer for memory performance, this was followed by barium titanate, however, methylammonium lead bromide performed poorly with polymer but showed promise as a single crystal structure. The results also showed that an increase in concentration of the tested material in a blend composition resulted in a corresponding increase in memory function, and that blend compositions were much more effective than layered compositions

Evaluation of metal-organic frameworks in electronic devices for gas sensing

Integrating nano-porous metal-organic frameworks (MOFs) in electronic devices such as capacitors, transistor or memristor enables sensing applications for a wide variety of guest molecules. Particularly, the incorporation of thin MOF films in metal-insulator-semiconductor (MIS) capacitor structures allows real-life applications because of its low voltage operation. Additionally, MIS capacitors offer a thorough study of interfacial defects such as interface traps and border traps distributed within the device. In electronic devices, a low concentration of interfacial defects is required to avoid threshold-voltage instabilities. This fact guarantees good stability and performance of electrical devices. This research work provides detailed investigation about charges and defects in MOFs-based MIS capacitors by impedance spectroscopy. Cu3(BTC)2 was coated directly on silicon, and on thermally grown silicon dioxide surfaces in a layer-by-layer fashion. The layer thickness was easily handled by varying the number of spray cycles in the coating process. In addition, Si/SiO2/Al MIS capacitors were investigated for comparison reasons. The successful growth of ultra-thin Cu3(BTC)2 films on silicon substrates was verified via X-ray diffraction (XRD) experiments. The function of MOFs within MIS capacitors was investigated via capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics measured at different frequencies and temperatures. The results show evidence of positive and negative fixed charges in the Cu3(BTC)2 dielectric layer as well as of the presence of border traps which cause hysteresis in the C-V characteristics. Evidence of interface traps is directly observed by the peak on the conductance curve. Analysis of the data demonstrates that ultra-thin Cu3(BTC)2 films prepared without ultrasonication exhibit a relatively low density of border traps (~1011cm-2), interface traps (~1011eV-1cm-2) and time response in the order of µs. Temperature-dependent measurements degrade the electrical quality of the MOFs. The addition of ultrasonication steps on the coating process decreases considerably the density of border traps. Additionally, the layers are more stable under heating experiments, and after cooling they almost recover the initial state. The experimental results show that MOF-based capacitors exhibit interface quality comparable to inorganic materials, making them suitable for sensing applications

Fabrication and Characterization of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors for High Power Applications

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) are promising candidates for next generation high-efficiency and high-voltage power applications. The excellent physical properties of GaN-based materials, featuring high critical electric field and large carrier saturation velocity, combined to the high carrier density and large mobility of the two-dimensional electron gas confined at the AlGaN/GaN interface, enable higher power density minimizing power losses and self-heating of the device. However, the advent of the GaN-based MIS-HEMT to the industrial production is still hindered by technological challenges that are being faced in parallel. Among them, one of the biggest challenge is represented by the insertion of a gate dielectric in MIS-HEMTs compared to Schottky-gate HEMTs, which causes operational instability due to the presence of high-density trap states located at the dielectric/III-nitride interface or within the dielectric. The development of a gold-free ohmic contact technology is another important concern since the high-volume and cost-effective production of GaN-based transistors also depends on the cooperative manufacturing of GaN-based devices in Si production facilities, where gold represents an undesidered source of contamination. In fact, even though over the past years there have been multiple attemps to develop gold-free ohmic contacts, there is still no full understanding of the contact formation and current transport mechanism. The first objective of this work was the investigation of a gold-free and low-resistive ohmic contact technology to AlGaN/GaN based on sputtered Ta/Al-based metal stacks annealed at low temperatures. A low contact resistance below 1 Ω mm was obtained using Ta/Al-based metal stacks annealed at temperatures below 600 °C. The ohmic behavior and the contact properties of contact resistance, optimum annealing temperature and thermal stability of Ta/Al-based contacts were studied. The nature of the current transport was also investigated indicating a contact mechanism governed by thermionic field emission tunneling through the AlGaN barrier. Finally, gold-free Ta/Al-based ohmic contacts were integrated in MIS-HEMTs fabricated on a 150 mm GaN-on- Si substrate, demonstrating to be a promising contact technology for AlGaN/GaN devices and revealing to be beneficial for devices operating at high temperatures. The optimization of the MIS-gate structure in terms of trap states at the dielectric/III-nitride interface and inside the dielectric in MIS-HEMTs using atomic layer deposited (ALD) Al2O3 as gate insulator was the second focus of this work. First, the MIS-gate structure was improved by an O2 plasma surface preconditioning applied before the Al2O3 deposition and by an N2 postmetallization anneal applied after gate metallization, which significantly reduced trap states at the Al2O3/GaN interface and within the dielectric. Afterwards, the effectiveness of these treatments was demonstrated in Al2O3-AlGaN/GaN MIS-HEMTs by pulsed current–voltage measurements revealing improved threshold voltage stability. Lastly, it was shown that also the lower annealing temperatures used for the formation of Ta/Al-based ohmic contacts, processed before gate dielectric deposition, are beneficial in terms of trap states at the ALD-Al2O3/GaN interface, representing a new aspect to be considered when using an ohmic first fabrication approach

Embedded charge for microswitch applications

In this work a micro-electro-mechanical system (MEMS) is proposed for radio frequency (RF) switching applications. MEMS devices outperform the traditionally used solid-state devices in areas such as isolation, insertion loss, and linearity. However, micro switches suffer from high actuation voltage, lifetime limitations, and high packaging cost. A novel micro switch design that incorporates embedded charge in a cantilever structure can, in principle, enable low-voltage operation. This was the primary motivation for this stud

High voltage laboratory : simulation, adjustment and test on electrical insulators

Tese de mestrado integrado. Engenharia Electrotécnica e de Computadores (Major Energia). Faculdade de Engenharia. Universidade do Porto. 200

Sigma-Delta control of charge trapping in heterogeneous devices

Dielectric charging represents a major reliability issue in a variety of semiconductor devices. The accumulation of charge in dielectric layers of a device often alters its performance, affecting its circuital features and even reducing its effective lifetime. Although several contributions have been made in order to mitigate the undesired effects of charge trapping on circuit performance, dielectric charge trapping still remains an open reliability issue in several applications. The research work underlying this Thesis mainly focuses on the design, analysis and experimental validation of control strategies to compensate dielectric charging in heterogeneous devices. These control methods are based on the application of specifically designed voltage waveforms that produce complementary effects on the charge dynamics. Using sigma-delta loops, these controls allow to set and maintain, within some limits, the net trapped charge in the dielectric to desired levels that can be changed with time. This allows mitigating long-term reliability issues such as capacitance-voltage (C-V) shifts in MOS and MIM capacitors. Additionally, the bit streams generated by the control loops provide real-time information on the evolution of the trapped charge. The proposed controls also allow compensating the effects of the charge trapping due to external disturbances such as radiation. This has been demonstrated experimentally with MOS capacitors subjected to various types of ionizing radiation (X-rays and gamma rays) while a charge control is being applied. This approach opens up the possibility of establishing techniques for active compensation of radiation-induced charge in MOS structures as well as a new strategy for radiation sensing. A modeling strategy to characterize the dynamics of the dielectric charge in MOS capacitors is also presented. The diffusive nature of the charge trapping phenomena allows their behavioral characterization using Diffusive Representation tools. The experiments carried out demonstrate a very good matching between the predictions of the model and the experimental results obtained. The time variations in the charge dynamics due to changes in the volatges applied and/or due to external disturbances have been also investigated and modeled. Moreover, the charge dynamics of MOS capacitors under sigma-delta control is analyzed using the tools of Sliding Mode Controllers for an infinite sampling frequency approximation. A phenomenological analytical model is obtained which allows to predict and analyze the sequence of control signals. This model has been successfully validated with experimental data. Finally, the above control strategies are extended to other devices such as eMIM capacitors and perovskite solar cells. Preliminary results including open loop and closed loop control experiments are presented. These results demonstrate that the application of the controls allows to set and stabilize both the C-V characteristic of an eMIM capacitor and the current-voltage characteristic (J-V) of a perovskite solar cell.La carga atrapada en dieléctricos suele implicar un problema importante de fiabilidad en muchos dispositivos semiconductores. La acumulación de dicha carga, normalmente provocada por las tensiones aplicadas durante el uso del dispositivo, suele alterar el rendimiento de éste con el tiempo, afectar sus prestaciones a nivel de circuital e, incluso, reducir su vida útil. Aunque durante años se han realizado muchos trabajos para mitigar sus efectos no deseados, sobre todo a nivel circuital, la carga atrapada en dieléctricos sigue siendo un problema abierto que frena la aplicabilidad práctica de algunos dispositivos. El trabajo de investigación realizado en esta Tesis se centra principalmente en el diseño, análisis y validación experimental de estrategias de control para compensar la carga atrapada en dieléctricos de diversos tipos de dispositivos, incluyendo condensadores MOS, condensadores MIM fabricados con nanotecnología y dispositivos basados en perovskitas. Los controles propuestos se basan en utilizar formas de onda de tensión, específicamente diseñadas, que producen efectos complementarios en la dinámica de la carga. Mediante el uso de lazos sigma-delta, estos controles permiten establecer y mantener, dentro de unos límites, la carga neta atrapada en el dieléctrico a valores prefijados, que pueden cambiarse con el tiempo. Esto permite mitigar problemas de fiabilidad a largo plazo como por ejemplo las derivas de la curva capacidad-tensión (C-V) en condensadores MOS y MIM. Adicionalmente, las tramas de bits generadas por los lazos de control proporcionan información en tiempo real sobre la evolución de la carga. Los controles propuestos permiten también compensar los efectos de la carga atrapada en dieléctricos debida a perturbaciones externas como la radiación. Esto se ha demostrado experimentalmente con condesadores MOS sometidos a diversos tipos de radiación ionizante (rayos X y gamma) mientras se les aplicaba un control de carga. Este resultado abre la posibilidad tanto de establecer técnicas de compensación activa de carga inducida por radiación en estructuras MOS, como una nueva estrategia de sensado de radiación. Se presenta también una estrategia de modelado para caracterizar la dinámica de la carga dieléctrica en condensadores MOS. La naturaleza difusiva de los fenómenos de captura y eliminación de carga en dieléctricos permite caracterizar dichos fenómenos empleando herramientas de Representación Difusiva. Los experimentos realizados demuestran una muy buena correspondencia entre las predicciones del modelo y los resultados experimentales obtenidos. Se muestra también como las variaciones temporales de los modelos son debidas a cambios en las formas de onda de actuación del dispositivo y/o a perturbaciones externas. Además, la dinámica de carga en condensadores MOS bajo control sigma-delta se analiza utilizando herramientas de control en modo deslizante (SMC), considerando la aproximación de frecuencia de muestreo infinita. Con ello se obtiene un modelo analítico simplificado que permite predecir y analizar con éxito la secuencia de señales de control. Este modelo se ha validado satisfactoriamente con datos experimentales. Finalmente, las estrategias de control anteriores se han extendido a otros dispositivos susceptibles de sufrir efectos de carga atrapada que pueden afectar su fiabilidad. Así, se han llevado a cabo experimentos preliminares cuyos resultados demuestran que la aplicación de controles de carga permite controlar y estabilizar la característica C-V de un condensador eMIM y la característica corriente-tensión (J-V) de una célula solar basada en perovskitas

Sigma-Delta control of charge trapping in heterogeneous devices

Dielectric charging represents a major reliability issue in a variety of semiconductor devices. The accumulation of charge in dielectric layers of a device often alters its performance, affecting its circuital features and even reducing its effective lifetime. Although several contributions have been made in order to mitigate the undesired effects of charge trapping on circuit performance, dielectric charge trapping still remains an open reliability issue in several applications. The research work underlying this Thesis mainly focuses on the design, analysis and experimental validation of control strategies to compensate dielectric charging in heterogeneous devices. These control methods are based on the application of specifically designed voltage waveforms that produce complementary effects on the charge dynamics. Using sigma-delta loops, these controls allow to set and maintain, within some limits, the net trapped charge in the dielectric to desired levels that can be changed with time. This allows mitigating long-term reliability issues such as capacitance-voltage (C-V) shifts in MOS and MIM capacitors. Additionally, the bit streams generated by the control loops provide real-time information on the evolution of the trapped charge. The proposed controls also allow compensating the effects of the charge trapping due to external disturbances such as radiation. This has been demonstrated experimentally with MOS capacitors subjected to various types of ionizing radiation (X-rays and gamma rays) while a charge control is being applied. This approach opens up the possibility of establishing techniques for active compensation of radiation-induced charge in MOS structures as well as a new strategy for radiation sensing. A modeling strategy to characterize the dynamics of the dielectric charge in MOS capacitors is also presented. The diffusive nature of the charge trapping phenomena allows their behavioral characterization using Diffusive Representation tools. The experiments carried out demonstrate a very good matching between the predictions of the model and the experimental results obtained. The time variations in the charge dynamics due to changes in the volatges applied and/or due to external disturbances have been also investigated and modeled. Moreover, the charge dynamics of MOS capacitors under sigma-delta control is analyzed using the tools of Sliding Mode Controllers for an infinite sampling frequency approximation. A phenomenological analytical model is obtained which allows to predict and analyze the sequence of control signals. This model has been successfully validated with experimental data. Finally, the above control strategies are extended to other devices such as eMIM capacitors and perovskite solar cells. Preliminary results including open loop and closed loop control experiments are presented. These results demonstrate that the application of the controls allows to set and stabilize both the C-V characteristic of an eMIM capacitor and the current-voltage characteristic (J-V) of a perovskite solar cell.La carga atrapada en dieléctricos suele implicar un problema importante de fiabilidad en muchos dispositivos semiconductores. La acumulación de dicha carga, normalmente provocada por las tensiones aplicadas durante el uso del dispositivo, suele alterar el rendimiento de éste con el tiempo, afectar sus prestaciones a nivel de circuital e, incluso, reducir su vida útil. Aunque durante años se han realizado muchos trabajos para mitigar sus efectos no deseados, sobre todo a nivel circuital, la carga atrapada en dieléctricos sigue siendo un problema abierto que frena la aplicabilidad práctica de algunos dispositivos. El trabajo de investigación realizado en esta Tesis se centra principalmente en el diseño, análisis y validación experimental de estrategias de control para compensar la carga atrapada en dieléctricos de diversos tipos de dispositivos, incluyendo condensadores MOS, condensadores MIM fabricados con nanotecnología y dispositivos basados en perovskitas. Los controles propuestos se basan en utilizar formas de onda de tensión, específicamente diseñadas, que producen efectos complementarios en la dinámica de la carga. Mediante el uso de lazos sigma-delta, estos controles permiten establecer y mantener, dentro de unos límites, la carga neta atrapada en el dieléctrico a valores prefijados, que pueden cambiarse con el tiempo. Esto permite mitigar problemas de fiabilidad a largo plazo como por ejemplo las derivas de la curva capacidad-tensión (C-V) en condensadores MOS y MIM. Adicionalmente, las tramas de bits generadas por los lazos de control proporcionan información en tiempo real sobre la evolución de la carga. Los controles propuestos permiten también compensar los efectos de la carga atrapada en dieléctricos debida a perturbaciones externas como la radiación. Esto se ha demostrado experimentalmente con condesadores MOS sometidos a diversos tipos de radiación ionizante (rayos X y gamma) mientras se les aplicaba un control de carga. Este resultado abre la posibilidad tanto de establecer técnicas de compensación activa de carga inducida por radiación en estructuras MOS, como una nueva estrategia de sensado de radiación. Se presenta también una estrategia de modelado para caracterizar la dinámica de la carga dieléctrica en condensadores MOS. La naturaleza difusiva de los fenómenos de captura y eliminación de carga en dieléctricos permite caracterizar dichos fenómenos empleando herramientas de Representación Difusiva. Los experimentos realizados demuestran una muy buena correspondencia entre las predicciones del modelo y los resultados experimentales obtenidos. Se muestra también como las variaciones temporales de los modelos son debidas a cambios en las formas de onda de actuación del dispositivo y/o a perturbaciones externas. Además, la dinámica de carga en condensadores MOS bajo control sigma-delta se analiza utilizando herramientas de control en modo deslizante (SMC), considerando la aproximación de frecuencia de muestreo infinita. Con ello se obtiene un modelo analítico simplificado que permite predecir y analizar con éxito la secuencia de señales de control. Este modelo se ha validado satisfactoriamente con datos experimentales. Finalmente, las estrategias de control anteriores se han extendido a otros dispositivos susceptibles de sufrir efectos de carga atrapada que pueden afectar su fiabilidad. Así, se han llevado a cabo experimentos preliminares cuyos resultados demuestran que la aplicación de controles de carga permite controlar y estabilizar la característica C-V de un condensador eMIM y la característica corriente-tensión (J-V) de una célula solar basada en perovskitas.Postprint (published version

Design, simulation and fabrication of a mems in-situ contactless sensor to detect plasma induced damage during reactive ion etching

The present trend in the semiconductor industry is towards submicron devices. An inevitable process technique in achieving this is by reactive ion etching of the polysilicon gate. During RIE, the gate oxide may get damaged due to several causes. One of the main causes of the damage is the non-uniformity of the plasma. It is reported that these plasma inconsistencies are mainly due to electrode design and that they create spatial plasma potential fluctuation. These fluctuations are reported to be in the range of 10-20 Volts. By providing an in-situ monitoring of the wafers, the reliability of the device could be established. The purpose of this sensor is to detect the spatial fluctuations. It works on the principle of electrostatic forces. It is made of polysilicon (gate material) and consists of two cantilevers separated by 2μm constituting a parallel plate capacitor configuration. The design, simulation and fabrication of the sensor was carried out. The test results demonstrated that sensors with beam lengths 150μm, 200μm and 250μm deflect by 2μm at externally applied voltages of 65, 56, and 50 volts respectively. Optimized beam dimensions that would deflect by 1.2µm at an applied voltage of 20 Volts is estimated from the experimental results and has the following dimensions: length of the cantilever = 200μm, width = 2μm, the thickness = 1.6μm, and the space between the cantilevers is = 1.2μm

INVESTIGATING PRE-BREAKDOWN CURRENTS IN POLYMER TANTALUM CAPACITORS

Poly(3,4-ethylenedioxythiophene) (PEDOT), a conducting polymer, has been used since the 1990s for the cathode of tantalum capacitors, which have a tantalum anode, and a layer of tantalum pentoxide as the dielectric. Such capacitors are referred to as Polymer Ta capacitors. The first method, an in situ polymerization technique, used to deposit the polymer resulted in capacitors with a significant leakage current and breakdown voltages near 50 V. The second method, a pre-polymerization (pre-poly) technique, resulted in capacitors that have a much lower leakage current and a higher breakdown voltage than the in situ capacitors. In this thesis, an accurate measurement technique for dielectric leakage current, also referred to as the pre-breakdown current, was established for capacitors. Current versus time measurements at constant voltage were performed at several voltages and the results were compiled to obtain the current-voltage (I-V) characteristics of both in situ and pre-poly types of capacitors. These characteristics were then modeled and analyzed, which led to the conclusion that the pre-breakdown current is controlled by the Poole-Frenkel mechanism in the in situ capacitors and by both the Poole-Frenkel and Schottky mechanisms in the pre-poly capacitors. Current versus time measurements were also performed at various temperatures to obtain the activation energy for the current in the capacitors and to verify the leakage mechanisms. Results suggest the presence of shallow 0.15 eV traps in the dielectric of the in situ capacitor and deeper 0.75 eV traps in that of the pre-poly capacitor. Additionally, pre-poly capacitors also have a 0.54 eV Schottky barrier that limits the electrons from being emitted into the dielectric from the electrode. Both the deep trap levels and the Schottky barrier explain the lower leakage current and higher breakdown voltage observed in the pre-poly capacitors as compared to the in situ capacitors

Contributions to the performance of thin film capacitors for high reliability applications

Capacitors are critical devices in microelectronic assemblies that must be incorporated into electronic systems through a variety of ways such as integrated or discrete devices. This work has developed new thin film capacitors deposited directly onto multichip module or printed circuit board surfaces to benefit from closer integration that enhances system performance for use in high reliability applications. The capacitors serve as filters or provide tuning and energy storage functions. Unexpected performance was observed during development that included low adhesion of the films to the substrates, higher effective dielectric constants than reported in literature, and low yields. Three publications resulted from this work with Paper I presenting a study of thin films on low temperature cofired ceramic (LTCC) and their reliability for multiple functions. The thin film and LTCC system are modeled with results suggesting a mechanism of enhancing thin film adhesion to the LTCC through a combination film composition and surface modification. Paper II presents measurements of dielectric properties of thin film capacitors on LTCC. Multiple mechanisms are detailed that contribute to the measured dielectric constant values of the capacitors. One case is modeled to determine the extent of dielectric constant enhancement from fringe fields related to capacitor dimensions. Paper III describes the behavior of thin film capacitors with varying electrode compositions and configurations. Trends are observed that suggest energy band overlap and electrode work functions are influential in dielectric properties and yield of the capacitors. A preferred electrode composition and configuration is suggested based on the capacitor performance --Abstract, page iii