The Concept of Substrate Integrated E-plane Waveguide and Circuits

In this thesis, a new type of substrate integrated waveguide is proposed for implementing E-plane type of waveguide circuits on printed circuit boards. obviously, these E-plane type of circuits cannot be realized by the conventional substrate integrated waveguide. The so-called substrate integrated E-plane waveguide consists of two circuit boards attached to each other. Two copper strips are inserted in between two circuit boards, where plated through holes are penetrated through them along the transmission direction. The plated through holes and copper strips altogether played as side walls of a conventional waveguide to support longitudinal and vertical currents. Simulation is carried out and the result shows that the proposed waveguide is able to guide horizontally polarized electromagnetive wave. An E-plane inductive septa filter, two one-dimensional E-plane offset waveguide filters, and an air-filled evanescent-mode band-pass filter are proposed as examples to prove that E-plane type of circuits are able to be built based on this new synthesized waveguide structure

A Three-Pole Substrate Integrated Waveguide Bandpass Filter Using New Coupling Scheme

A novel three-pole substrate integrated waveguide (SIW) bandpass filter (BPF) using new coupling scheme is proposed in this paper. Two high order degenerate modes (TE102 and TE201) of a square SIW cavity and a dominant mode (TE101) of a rectangular SIW cavity are coupled to form a three-pole SIW BPF. The coupling scheme of the structure is given and analyzed. Due to the coupling between two cavities, as well as the coupling between source and load, three transmission zeros are created in the stopband of the filter. The proposed three-pole SIW BPF is designed and fabricated. Good agreement between simulated and measured results verifies the validity of the design methodology well

Wideband and UWB antennas for wireless applications. A comprehensive review

A comprehensive review concerning the geometry, the manufacturing technologies, the materials, and the numerical techniques, adopted for the analysis and design of wideband and ultrawideband (UWB) antennas for wireless applications, is presented. Planar, printed, dielectric, and wearable antennas, achievable on laminate (rigid and flexible), and textile dielectric substrates are taken into account. The performances of small, low-profile, and dielectric resonator antennas are illustrated paying particular attention to the application areas concerning portable devices (mobile phones, tablets, glasses, laptops, wearable computers, etc.) and radio base stations. This information provides a guidance to the selection of the different antenna geometries in terms of bandwidth, gain, field polarization, time-domain response, dimensions, and materials useful for their realization and integration in modern communication systems

A 275–425-GHz Tunerless Waveguide Receiver Based on AlN-Barrier SIS Technology

We report on a 275–425-GHz tunerless waveguide receiver with a 3.5–8-GHz IF. As the mixing element, we employ a high-current-density Nb–AlN–Nb superconducting–insulating– superconducting (SIS) tunnel junction. Thanks to the combined use of AlN-barrier SIS technology and a broad bandwidth waveguide to thin-film microstrip transition, we are able to achieve an unprecedented 43% instantaneous bandwidth, limited by the receiver's corrugated feedhorn. The measured double-sideband (DSB) receiver noise temperature, uncorrected for optics loss, ranges from 55 K at 275 GHz, 48 K at 345 GHz, to 72 K at 425 GHz. In this frequency range, the mixer has a DSB conversion loss of 2.3 1 dB. The intrinsic mixer noise is found to vary between 17–19 K, of which 9 K is attributed to shot noise associated with leakage current below the gap. To improve reliability, the IF circuit and bias injection are entirely planar by design. The instrument was successfully installed at the Caltech Submillimeter Observatory (CSO), Mauna Kea, HI, in October 2006

Receiver front-end circuits and components for millimetre and submillimetre wavelengths

This dissertation focuses on the development of millimetre- and submillimetre-wave receiver front-end circuits and components. Seven scientific articles, written by the author, present this development work. A short introduction to the technology related to the designs of the thesis precedes the articles. The articles comprise several novel structures and techniques intended to further improve the performance of receivers or to provide new ways for receiver circuit implementation, summarised as follows. 1) Novel rectangular waveguide-to-CPW waveguide transition using a probe structure. The measured insertion and return loss of an X-band (8.2-12.4 GHz) back-to-back structure are less than 0.5 dB and more than 17 dB, respectively, over the entire frequency band (fractional bandwidth of > 40 %). The transition is used in a submm-wave mixer. 2) Novel rectangular waveguide-to-CPW transition using a fin-line taper. The measured insertion and return loss of an X-band (8.2-12.4 GHz) back-to-back structure are less than 0.4 dB and more than 16 dB, respectively, over the entire frequency band. 3) Novel tunable waveguide backshort based on a fixed waveguide short and movable dielectric slab. The measured return loss for a W-band backshort is less than 0.21 dB (VSWR > 82) over the entire frequency band of 75-110 GHz. 4) New coaxial bias T. The insertion loss is less than 0.5 dB at 3-16 GHz (fractional bandwidth of 137 %) and 0.1 dB at 5.2-14.1 GHz. In the latter range, the return loss is more than 30 dB. The RF isolation is greater than 30 dB at 1-17 GHz. 5) First millimetre-wave subharmonic waveguide mixer using European quasi-vertical Schottky diodes. The mixer utilises a single diode chip with quartz filters in a four-tuner waveguide housing. A single-sideband noise temperature of 3500 K and conversion loss of 9.2 dB (antenna loss included) have been measured at 215 GHz with an LO power of 3.5 mW. 6) Balanced-type fifth-harmonic submillimetre-wave mixer. It uses two planar Schottky diodes, quartz filters, and a tuner-less in-line waveguide housing with an integrated diagonal horn antenna and new LO transition structure. The designed RF range is 500-700 GHz enabling the use of an LO source at 100-140 GHz. A conversion loss of about 27 dB has been measured at 650 GHz with an LO power of 10 mW. The mixer has been in use in phase locking of a submm-wave signal source. 7) Characterisation procedure of planar Schottky diodes with extensive dc, capacitance, and wide-band (up to 220 GHz) S-parameter measurements and parameter extraction. Parameters of a simple diode equivalent circuit and results of extensive measurements are available for designers and diode manufacturers for further use.reviewe

Millimeter Wave Substrate Integrated Waveguide Antennas: Design and Fabrication Analysis

The paper presents a new concept in antenna design, whereby a photo-imageable thick-film process is used to integrate a waveguide antenna within a multilayer structure. This has yielded a very compact, high performance antenna working at high millimeter-wave (mm-wave) frequencies, with a high degree of repeatability and reliability in antenna construction. Theoretical and experimental results for 70 GHz mm-wave integrated antennas, fabricated using the new technique are presented. The antennas were formed from miniature slotted waveguide arrays using up to 18 layers of photo-imageable material. To enhance the electrical performance a novel folded waveguide array was also investigated. The fabrication process is analysed in detail and the critical issues involved in the fabrication cycle are discussed. The losses in the substrate integrated waveguide have been calculated. The performance of the new integrated antenna is compared to conventional metallic, air-filled waveguide antennas, and also to conventional microstrip antenna arrays operating at the same frequencies

Development of micromachined millimeter-wave modules for next-generation wireless transceiver front-ends

This thesis discusses the design, fabrication, integration and characterization of millimeter wave passive components using polymer-core-conductor surface micromachining technologies. Several antennas, including a W-band broadband micromachined monopole antenna on a lossy glass substrate, and a Ka-band elevated patch antenna, and a V-band micromachined horn antenna, are presented. All antennas have advantages such as a broad operation band and high efficiency. A low-loss broadband coupler and a high-Q cavity for millimeter-wave applications, using surface micromachining technologies is reported using the same technology. Several low-loss all-pole band-pass filters and transmission-zero filters are developed, respectively. Superior simulation and measurement results show that polymer-core-conductor surface micromachining is a powerful technology for the integration of high-performance cavity, coupler and filters. Integration of high performance millimeter-wave transceiver front-end is also presented for the first time. By elevating a cavity-filter-based duplexer and a horn antenna on top of the substrate and using air as the filler, the dielectric loss can be eliminated. A full-duplex transceiver front-end integrated with amplifiers are designed, fabricated, and comprehensively characterized to demonstrate advantages brought by this surface micromachining technology. It is a low loss and substrate-independent solution for millimeter-wave transceiver integration.Ph.D.Committee Chair: John Papapolymerou; Committee Chair: Manos Tentzeris; Committee Member: Gordon Stuber; Committee Member: John Cressler; Committee Member: John Z. Zhang; Committee Member: Joy Laska

Empty substrate integrated waveguide technology for E plane high-frequency and high-performance circuits

Substrate integrated circuits (SIC) have attracted much attention in the last years because of their great potential of low cost, easy manufacturing, integration in a circuit board, and higher-quality factor than planar circuits. A first suite of SIC where the waves propagate through dielectric have been first developed, based on the well-known substrate integrated waveguide (SIW) and related technological implementations. One step further has been made with a new suite of empty substrate integrated waveguides, where the waves propagate through air, thus reducing the associated losses. This is the case of the empty substrate integrated waveguide (ESIW) or the air-filled substrate integrated waveguide (air-filled SIW). However, all these SIC are H plane structures, so classical H plane solutions in rectangular waveguides have already been mapped to most of these new SIC. In this paper a novel E plane empty substrate integrated waveguide (ESIW-E) is presented. This structure allows to easily map classical E plane solutions in rectangular waveguide to this new substrate integrated solution. It is similar to the ESIW, although more layers are needed to build the structure. A wideband transition (covering the frequency range between 33 GHz and 50 GHz) from microstrip to ESIW-E is designed and manufactured. Measurements are successfully compared with simulation, proving the validity of this new SIC. A broadband high-frequency phase shifter (for operation from 35 GHz to 47 GHz) is successfully implemented in ESIW-E, thus proving the good performance of this new SIC in a practical application.This work was supported by the Ministerio de Economía y Competitividad, Spanish Goverment, under research projects TEC2013-47037-C5-3-R, TEC2013-47037-C5-1-R, AYA2013-49759-EXP, and CSD2010-00064

Investigation of the use of microwave image line integrated circuits for use in radiometers and other microwave devices in X-band and above

Program results are described in which the use of a/high permittivity rectangular dielectric image waveguide has been investigated for use in microwave and millimeter wavelength circuits. Launchers from rectangular metal waveguide to image waveguide are described. Theoretical and experimental evaluations of the radiation from curved image waveguides are given. Measurements of attenuation due to conductor and dielectric losses, adhesives, and gaps between the dielectric waveguide and the image plane are included. Various passive components are described and evaluations given. Investigations of various techniques for fabrication of image waveguide circuits using ceramic waveguides are also presented. Program results support the evaluation of the image line approach as an advantageous method for realizing low loss integrated electronic circuits for X-band and above