Computers from plants we never made. Speculations

We discuss possible designs and prototypes of computing systems that could be based on morphological development of roots, interaction of roots, and analog electrical computation with plants, and plant-derived electronic components. In morphological plant processors data are represented by initial configuration of roots and configurations of sources of attractants and repellents; results of computation are represented by topology of the roots' network. Computation is implemented by the roots following gradients of attractants and repellents, as well as interacting with each other. Problems solvable by plant roots, in principle, include shortest-path, minimum spanning tree, Voronoi diagram, $\alpha$-shapes, convex subdivision of concave polygons. Electrical properties of plants can be modified by loading the plants with functional nanoparticles or coating parts of plants of conductive polymers. Thus, we are in position to make living variable resistors, capacitors, operational amplifiers, multipliers, potentiometers and fixed-function generators. The electrically modified plants can implement summation, integration with respect to time, inversion, multiplication, exponentiation, logarithm, division. Mathematical and engineering problems to be solved can be represented in plant root networks of resistive or reaction elements. Developments in plant-based computing architectures will trigger emergence of a unique community of biologists, electronic engineering and computer scientists working together to produce living electronic devices which future green computers will be made of.Comment: The chapter will be published in "Inspired by Nature. Computing inspired by physics, chemistry and biology. Essays presented to Julian Miller on the occasion of his 60th birthday", Editors: Susan Stepney and Andrew Adamatzky (Springer, 2017

DRAM Bender: An Extensible and Versatile FPGA-based Infrastructure to Easily Test State-of-the-art DRAM Chips

To understand and improve DRAM performance, reliability, security and energy efficiency, prior works study characteristics of commodity DRAM chips. Unfortunately, state-of-the-art open source infrastructures capable of conducting such studies are obsolete, poorly supported, or difficult to use, or their inflexibility limit the types of studies they can conduct. We propose DRAM Bender, a new FPGA-based infrastructure that enables experimental studies on state-of-the-art DRAM chips. DRAM Bender offers three key features at the same time. First, DRAM Bender enables directly interfacing with a DRAM chip through its low-level interface. This allows users to issue DRAM commands in arbitrary order and with finer-grained time intervals compared to other open source infrastructures. Second, DRAM Bender exposes easy-to-use C++ and Python programming interfaces, allowing users to quickly and easily develop different types of DRAM experiments. Third, DRAM Bender is easily extensible. The modular design of DRAM Bender allows extending it to (i) support existing and emerging DRAM interfaces, and (ii) run on new commercial or custom FPGA boards with little effort. To demonstrate that DRAM Bender is a versatile infrastructure, we conduct three case studies, two of which lead to new observations about the DRAM RowHammer vulnerability. In particular, we show that data patterns supported by DRAM Bender uncovers a larger set of bit-flips on a victim row compared to the data patterns commonly used by prior work. We demonstrate the extensibility of DRAM Bender by implementing it on five different FPGAs with DDR4 and DDR3 support. DRAM Bender is freely and openly available at https://github.com/CMU-SAFARI/DRAM-Bender.Comment: To appear in TCAD 202

A Survey on Design Methodologies for Accelerating Deep Learning on Heterogeneous Architectures

In recent years, the field of Deep Learning has seen many disruptive and impactful advancements. Given the increasing complexity of deep neural networks, the need for efficient hardware accelerators has become more and more pressing to design heterogeneous HPC platforms. The design of Deep Learning accelerators requires a multidisciplinary approach, combining expertise from several areas, spanning from computer architecture to approximate computing, computational models, and machine learning algorithms. Several methodologies and tools have been proposed to design accelerators for Deep Learning, including hardware-software co-design approaches, high-level synthesis methods, specific customized compilers, and methodologies for design space exploration, modeling, and simulation. These methodologies aim to maximize the exploitable parallelism and minimize data movement to achieve high performance and energy efficiency. This survey provides a holistic review of the most influential design methodologies and EDA tools proposed in recent years to implement Deep Learning accelerators, offering the reader a wide perspective in this rapidly evolving field. In particular, this work complements the previous survey proposed by the same authors in [203], which focuses on Deep Learning hardware accelerators for heterogeneous HPC platforms

Controlling Ionic Transport in RRAM for Memory and Neuromorphic Computing Applications

Resistive random-access memory, based on a simple two-terminal device structure, has attracted tremendous interest recently for applications ranging from non-volatile data storage to neuromorphic computing. Resistive switching (RS) effects in RRAM devices originate from internal, microscopic ionic migration and the associated electrochemical processes which modify the materials’ chemical composition and subsequently their electrical and other physical properties. Therefore, controlling the internal ionic transport and redox reaction processes, ideally at the atomic scale, is necessary to optimize the device performance for practical applications with large-size arrays. In this thesis we present our efforts in understanding and controlling the ionic processes in RRAM devices. This thesis presents a comprehensive study on the fundamental understanding on physical mechanism of the ionic processes and the optimization of materials and device structures to achieve desirable device performance based on theoretical calculations and experimental engineering. First, I investigate the electronic structure of Ta2O5 polymorphs, a resistive switching material, and the formation and interaction of oxygen vacancies in amorphous Ta2O5, an important mobile defect responsible for the resistive switching process, using first-principles calculations. Based on the understanding of the fundamental properties of the switching material and the defect, we perform detailed theoretical and experimental analyses that reveal the dynamic vacancy charge transition processes, further helping the design and optimization of the oxide-based RRAM devices. Next, we develop a novel structure including engineered nanoporous graphene to control the internal ionic transport and redox reaction processes at the atomic level, leading to improved device performance. We demonstrate that the RS characteristics can be systematically tuned by inserting a graphene layer with engineered nanopores at a vacancy-exchange interface. The amount of vacancies injected in the switching layer and the size of the conducting filaments can be effectively controlled by the graphene layer working as an atomically-thin ion-blocking material in which ionic transports/reactions are allowed only through the engineered nanosized openings. Lastly, better incremental switching characteristics with improved linearity are obtained through optimization of the switching material density. These improvements allow us to build RRAM crossbar networks for data clustering analysis through unsupervised, online learning in both neuromorphic applications and arithmetic applications in which accurate vector-matrix multiplications are required. We expect the optimization approaches and the optimized devices can be used in other machine learning and arithmetic computing systems, and broaden the range of problems RRAM based network can solve.PHDMaterials Science and EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/146119/1/jihang_1.pd

Potential and Challenges of Analog Reconfigurable Computation in Modern and Future CMOS

In this work, the feasibility of the floating-gate technology in analog computing platforms in a scaled down general-purpose CMOS technology is considered. When the technology is scaled down the performance of analog circuits tends to get worse because the process parameters are optimized for digital transistors and the scaling involves the reduction of supply voltages. Generally, the challenge in analog circuit design is that all salient design metrics such as power, area, bandwidth and accuracy are interrelated. Furthermore, poor flexibility, i.e. lack of reconfigurability, the reuse of IP etc., can be considered the most severe weakness of analog hardware. On this account, digital calibration schemes are often required for improved performance or yield enhancement, whereas high flexibility/reconfigurability can not be easily achieved. Here, it is discussed whether it is possible to work around these obstacles by using floating-gate transistors (FGTs), and analyze problems associated with the practical implementation. FGT technology is attractive because it is electrically programmable and also features a charge-based built-in non-volatile memory. Apart from being ideal for canceling the circuit non-idealities due to process variations, the FGTs can also be used as computational or adaptive elements in analog circuits. The nominal gate oxide thickness in the deep sub-micron (DSM) processes is too thin to support robust charge retention and consequently the FGT becomes leaky. In principle, non-leaky FGTs can be implemented in a scaled down process without any special masks by using “double”-oxide transistors intended for providing devices that operate with higher supply voltages than general purpose devices. However, in practice the technology scaling poses several challenges which are addressed in this thesis. To provide a sufficiently wide-ranging survey, six prototype chips with varying complexity were implemented in four different DSM process nodes and investigated from this perspective. The focus is on non-leaky FGTs, but the presented autozeroing floating-gate amplifier (AFGA) demonstrates that leaky FGTs may also find a use. The simplest test structures contain only a few transistors, whereas the most complex experimental chip is an implementation of a spiking neural network (SNN) which comprises thousands of active and passive devices. More precisely, it is a fully connected (256 FGT synapses) two-layer spiking neural network (SNN), where the adaptive properties of FGT are taken advantage of. A compact realization of Spike Timing Dependent Plasticity (STDP) within the SNN is one of the key contributions of this thesis. Finally, the considerations in this thesis extend beyond CMOS to emerging nanodevices. To this end, one promising emerging nanoscale circuit element - memristor - is reviewed and its applicability for analog processing is considered. Furthermore, it is discussed how the FGT technology can be used to prototype computation paradigms compatible with these emerging two-terminal nanoscale devices in a mature and widely available CMOS technology.Siirretty Doriast

New Approaches for Memristive Logic Computations

Over the past five decades, exponential advances in device integration in microelectronics for memory and computation applications have been observed. These advances are closely related to miniaturization in integrated circuit technologies. However, this miniaturization is reaching the physical limit (i.e., the end of Moore\u27s Law). This miniaturization is also causing a dramatic problem of heat dissipation in integrated circuits. Additionally, approaching the physical limit of semiconductor devices in fabrication process increases the delay of moving data between computing and memory units hence decreasing the performance. The market requirements for faster computers with lower power consumption can be addressed by new emerging technologies such as memristors. Memristors are non-volatile and nanoscale devices and can be used for building memory arrays with very high density (extending Moore\u27s law). Memristors can also be used to perform stateful logic operations where the same devices are used for logic and memory, enabling in-memory logic. In other words, memristor-based stateful logic enables a new computing paradigm of combining calculation and memory units (versus von Neumann architecture of separating calculation and memory units). This reduces the delays between processor and memory by eliminating redundant reloading of reusable values. In addition, memristors consume low power hence can decrease the large amounts of power dissipation in silicon chips hitting their size limit. The primary focus of this research is to develop the circuit implementations for logic computations based on memristors. These implementations significantly improve the performance and decrease the power of digital circuits. This dissertation demonstrates in-memory computing using novel memristive logic gates, which we call volistors (voltage-resistor gates). Volistors capitalize on rectifying memristors, i.e., a type of memristors with diode-like behavior, and use voltage at input and resistance at output. In addition, programmable diode gates, i.e., another type of logic gates implemented with rectifying memristors are proposed. In programmable diode gates, memristors are used only as switches (unlike volistor gates which utilize both memory and switching characteristics of the memristors). The programmable diode gates can be used with CMOS gates to increase the logic density. As an example, a circuit implementation for calculating logic functions in generalized ESOP (Exclusive-OR-Sum-of-Products) form and multilevel XOR network are described. As opposed to the stateful logic gates, a combination of both proposed logic styles decreases the power and improves the performance of digital circuits realizing two-level logic functions Sum-of-Products or Product-of-Sums. This dissertation also proposes a general 3-dimentional circuit architecture for in-memory computing. This circuit consists of a number of stacked crossbar arrays which all can simultaneously be used for logic computing. These arrays communicate through CMOS peripheral circuits

Towards Oxide Electronics:a Roadmap

At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community. Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics

Artificial neural networks and their applications to intelligent fault diagnosis of power transmission lines

Over the past thirty years, the idea of computing based on models inspired by human brains and biological neural networks emerged. Artificial neural networks play an important role in the field of machine learning and hold the key to the success of performing many intelligent tasks by machines. They are used in various applications such as pattern recognition, data classification, stock market prediction, aerospace, weather forecasting, control systems, intelligent automation, robotics, and healthcare. Their architectures generally consist of an input layer, multiple hidden layers, and one output layer. They can be implemented on software or hardware. Nowadays, various structures with various names exist for artificial neural networks, each of which has its own particular applications. Those used types in this study include feedforward neural networks, convolutional neural networks, and general regression neural networks. Increasing the number of layers in artificial neural networks as needed for large datasets, implies increased computational expenses. Therefore, besides these basic structures in deep learning, some advanced techniques are proposed to overcome the drawbacks of original structures in deep learning such as transfer learning, federated learning, and reinforcement learning. Furthermore, implementing artificial neural networks in hardware gives scientists and engineers the chance to perform high-dimensional and big data-related tasks because it removes the constraints of memory access time defined as the von Neuman bottleneck. Accordingly, analog and digital circuits are used for artificial neural network implementations without using general-purpose CPUs. In this study, the problem of fault detection, identification, and location estimation of transmission lines is studied and various deep learning approaches are implemented and designed as solutions. This research work focuses on the transmission lines’ datasets, their faults, and the importance of identification, detection, and location estimation of them. It also includes a comprehensive review of the previous studies to perform these three tasks. The application of various artificial neural networks such as feedforward neural networks, convolutional neural networks, and general regression neural networks for identification, detection, and location estimation of transmission line datasets are also discussed in this study. Some advanced methods based on artificial neural networks are taken into account in this thesis such as the transfer learning technique. These methodologies are designed and applied on transmission line datasets to enable the scientist and engineers with using fewer data points for the training purpose and wasting less time on the training step. This work also proposes a transfer learning-based technique for distinguishing faulty and non-faulty insulators in transmission line images. Besides, an effective design for an activation function of the artificial neural networks is proposed in this thesis. Using hyperbolic tangent as an activation function in artificial neural networks has several benefits including inclusiveness and high accuracy

Algorithm/Architecture Co-Design for Low-Power Neuromorphic Computing

The development of computing systems based on the conventional von Neumann architecture has slowed down in the past decade as complementary metal-oxide-semiconductor (CMOS) technology scaling becomes more and more difficult. To satisfy the ever-increasing demands in computing power, neuromorphic computing has emerged as an attractive alternative. This dissertation focuses on developing learning algorithm, hardware architecture, circuit components, and design methodologies for low-power neuromorphic computing that can be employed in various energy-constrained applications. A top-down approach is adopted in this research. Starting from the algorithm-architecture co-design, a hardware-friendly learning algorithm is developed for spiking neural networks (SNNs). The possibility of estimating gradients from spike timings is explored. The learning algorithm is developed for the ease of hardware implementation, as well as the compatibility with many well-established learning techniques developed for classic artificial neural networks (ANNs). An SNN hardware equipped with the proposed on-chip learning algorithm is implemented in CMOS technology. In this design, two unique features of SNNs, the event-driven computation and the inferring with a progressive precision, are leveraged to reduce the energy consumption. In addition to low-power SNN hardware, accelerators for ANNs are also presented to accelerate the adaptive dynamic programing algorithm. An efficient and flexible single-instruction-multiple-data architecture is proposed to exploit the inherent data-level parallelism in the inference and learning of ANNs. In addition, the accelerator is augmented with a virtual update technique, which helps improve the throughput and energy efficiency remarkably. Lastly, two techniques in the architecture-circuit level are introduced to mitigate the degraded reliability of the memory system in a neuromorphic hardware owing to the aggressively-scaled supply voltage and integration density. The first method uses on-chip feedback to compensate for the process variation and the second technique improves the throughput and energy efficiency of a conventional error-correction method.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/144149/1/zhengn_1.pd