Gamma Radiation Assisted Grafting of Low Surface Energy Long Chain Molecule on Various Types of Polyolefin Elastomers (POE)

Surface modification of polymers can lead to changes of properties such as surface wettability, adhesion, bioactivity and biocompatibility. Here, a long chain, low surface energy monomer, docecyl methacrylate (DMA), which is difficult to graft by chemical mean was grafted onto three different types of ‘Engages’ (a polyolefin elastomer, POE) in ethanol/water medium by gamma radiation. Total dose and DMA concentration were optimized for the desired amount of low degree grafting (less than 15wt%). The surface wetting properties towards water were decreased for all Engage surfaces after grafting. Mechanical properties of the base polymers remained almost unchanged after grafting

Dynamic correlations of the Coulomb Luttinger liquid

The dynamic density response function, form-factor, and spectral function of a Luttinger liquid with Coulomb electron-electron interaction are studied with the emphasis on the short-range electron correlations. The Coulomb interaction changes dramatically the density response function as compared to the case of the short-ranged interaction. The form of the density response function is smoothing with time, and the oscillatory structure appears. However, the spectral functions remain qualitatively the same. The dynamic form-factor contains the $\delta$-peak in the long-wave region, corresponding to one-boson excitations. Besides, the multi-boson-excitations band exists in the wave-number region near to $2k_F$. The dynamic form-factor diverges at the edges of this band, while the dielectric function goes to zero there, which indicates the appearance of a soft mode. We develop a method to analyze the asymptotics of the spectral functions near to the edges of the multi-boson-excitations band.Comment: 11 pages, 3 figures, submitted to PR

Continuous-distribution puddle model for conduction in trilayer graphene

An insulator-to-metal transition is observed in trilayer graphene based on the temperature dependence of the resistance under different applied gate voltages. At small gate voltages the resistance decreases with increasing temperature due to the increase in carrier concentration resulting from thermal excitation of electron-hole pairs. At large gate voltages excitation of electron-hole pairs is suppressed, and the resistance increases with increasing temperature because of the enhanced electron-phonon scattering. We find that the simple model with overlapping conduction and valence bands, each with quadratic dispersion relations, is unsatisfactory. Instead, we conclude that impurities in the substrate that create local puddles of higher electron or hole densities are responsible for the residual conductivity at low temperatures. The best fit is obtained using a continuous distribution of puddles. From the fit the average of the electron and hole effective masses can be determined.Comment: 18 pages, 5 figure

Ultrarelativistic electron-hole pairing in graphene bilayer

We consider ground state of electron-hole graphene bilayer composed of two independently doped graphene layers when a condensate of spatially separated electron-hole pairs is formed. In the weak coupling regime the pairing affects only conduction band of electron-doped layer and valence band of hole-doped layer, thus the ground state is similar to ordinary BCS condensate. At strong coupling, an ultrarelativistic character of electron dynamics reveals and the bands which are remote from Fermi surfaces (valence band of electron-doped layer and conduction band of hole-doped layer) are also affected by the pairing. The analysis of instability of unpaired state shows that s-wave pairing with band-diagonal condensate structure, described by two gaps, is preferable. A relative phase of the gaps is fixed, however at weak coupling this fixation diminishes allowing gapped and soliton-like excitations. The coupled self-consistent gap equations for these two gaps are solved at zero temperature in the constant-gap approximation and in the approximation of separable potential. It is shown that, if characteristic width of the pairing region is of the order of magnitude of chemical potential, then the value of the gap in the spectrum is not much different from the BCS estimation. However, if the pairing region is wider, then the gap value can be much larger and depends exponentially on its energy width.Comment: 13 pages with 8 figures; accepted to Eur. Phys. J.

Analytic theory of ground-state properties of a three-dimensional electron gas at varying spin polarization

We present an analytic theory of the spin-resolved pair distribution functions $g_{\sigma\sigma'}(r)$ and the ground-state energy of an electron gas with an arbitrary degree of spin polarization. We first use the Hohenberg-Kohn variational principle and the von Weizs\"{a}cker-Herring ideal kinetic energy functional to derive a zero-energy scattering Schr\"{o}dinger equation for $\sqrt{g_{\sigma\sigma'}(r)}$. The solution of this equation is implemented within a Fermi-hypernetted-chain approximation which embodies the Hartree-Fock limit and is shown to satisfy an important set of sum rules. We present numerical results for the ground-state energy at selected values of the spin polarization and for $g_{\sigma\sigma'}(r)$ in both a paramagnetic and a fully spin-polarized electron gas, in comparison with the available data from Quantum Monte Carlo studies over a wide range of electron density.Comment: 13 pages, 8 figures, submitted to Phys. Rev.

Double-Layer Systems at Zero Magnetic Field

We investigate theoretically the effects of intralayer and interlayer exchange in biased double-layer electron and hole systems, in the absence of a magnetic field. We use a variational Hartree-Fock-like approximation to analyze the effects of layer separation, layer density, tunneling, and applied gate voltages on the layer densities and on interlayer phase coherence. In agreement with earlier work, we find that for very small layer separations and low layer densities, an interlayer-correlated ground state possessing spontaneous interlayer coherence (SILC) is obtained, even in the absence of interlayer tunneling. In contrast to earlier work, we find that as a function of total density, there exist four, rather than three, distinct noncrystalline phases for balanced double-layer systems without interlayer tunneling. The newly identified phase exists for a narrow range of densities and has three components and slightly unequal layer densities, with one layer being spin polarized, and the other unpolarized. An additional two-component phase is also possible in the presence of sufficiently strong bias or tunneling. The lowest-density SILC phase is the fully spin- and pseudospin-polarized ``one-component'' phase discussed by Zheng {\it et al.} [Phys. Rev. B {\bf 55}, 4506 (1997)]. We argue that this phase will produce a finite interlayer Coulomb drag at zero temperature due to the SILC. We calculate the particle densities in each layer as a function of the gate voltage and total particle density, and find that interlayer exchange can reduce or prevent abrupt transfers of charge between the two layers. We also calculate the effect of interlayer exchange on the interlayer capacitance.Comment: 35 pages, 19 figures included. To appear in PR

Faraday rotation in graphene

We study magneto--optical properties of monolayer graphene by means of quantum field theory methods in the framework of the Dirac model. We reveal a good agreement between the Dirac model and a recent experiment on giant Faraday rotation in cyclotron resonance. We also predict other regimes when the effects are well pronounced. The general dependence of the Faraday rotation and absorption on various parameters of samples is revealed both for suspended and epitaxial graphene.Comment: 10 pp; v2: typos corrected and references added, v3, v4: small changes and more reference

Optical Properties of III-Mn-V Ferromagnetic Semiconductors

We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments to the III-V host, which can result in carrier mediated ferromagnetism in these disordered semiconductors. Spectroscopic experiments provide direct access to the strength and nature of the exchange between holes and local moments; the degree of itineracy of the carriers; and the evolution of the states at the Fermi energy with doping. Taken together, diversity of optical methods reveal that Mn is an unconventional dopant, in that the metal to insulator transition is governed by the strength of the hybridization between Mn and its p-nictogen neighbor. The interplay between the optical, electronic and magnetic properties of III-Mn-V magnetic semiconductors is of fundamental interest and may enable future spin-optoelectronic devices.Comment: Topical Revie