Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes

The semiconductor gallium nitride is the material at the centre of energy-efficient solid-state lighting and is becoming increasingly important in high-power and high-frequency electronics. Reducing the dislocation density of gallium nitride planar layers is important for improving the performance and reliability of devices, such as light-emitting diodes and high-electron-mobility transistors. The patterning of selective growth masks is one technique for forcing a three-dimensional growth mode in order to control the propagation of threading defects to the active device layers. The morphology of the three-dimensional growth front is determined by the relative growth rates of the different facets that are formed, and for GaN is typically limited by the slow-growing {1 −1 0 1} facets. We demonstrate how the introduction of nanodash growth windows can be oriented in an array to preserve fast-growing {1 1 −2 2} facets at the early stage of growth to accelerate coalescence of three-dimensional structures into a continuous GaN layer. Cathodoluminescence and Electron Channelling Contrast Imaging methods, both used to measure the threading dislocation density, reveal that the dislocations are organised and form a distinctive pattern according to the underlying mask. By optimising the arrangement of nanodashes and the nanodash density, the threading dislocation density of GaN on sapphire epilayers can be reduced significantly from 109 cm−2 to 3.0 × 107 cm−2. Raman spectroscopy, used to monitor the strain in the overgrown GaN epilayers, shows that the position of the GaN E2H phonon mode peak was reduced as the dash density increases for a sample grown via pendeo-epitaxy whilst no obvious change was recorded for a sample grown via more conventional epitaxial lateral overgrowth. These results show how growth mask design can be used to circumvent limitations imposed by the growth dynamics. Moreover, they have revealed a greater understanding of the influence of the growth process on the dislocation density which will lead to higher performing electronic and optoelectronic devices as a result of the lower dislocation densities achieved

Multisensory Integration in Self Motion Perception

Self motion perception involves the integration of visual, vestibular, somatosensory and motor signals. This article reviews the findings from single unit electrophysiology, functional and structural magnetic resonance imaging and psychophysics to present an update on how the human and non-human primate brain integrates multisensory information to estimate one's position and motion in space. The results indicate that there is a network of regions in the non-human primate and human brain that processes self motion cues from the different sense modalities

Vypracujte projekt PVS pro obrábění plastických hmot s možností umístění v Centru robototechniky

Import 20/04/2006Prezenční výpůjčkaVŠB - Technická univerzita Ostrava. Fakulta strojní. Katedra (354) robototechnik

Financial analysis of Chodovar spol. s r.o.

The main goal of this Bachelor's Thesis is to judge financial health of Chodovar spol. s r.o. between the years 2007 -- 2011. The work is divided into two parts. Firstly, methods are introduced in a theoretical part and afterwards they are applied to the particular company in a practical part. Methods used in this work include an analysis of absolute and ratio indicators, balance rules, working capital, pyramidal decomposition of ROE, creditworthy and bankruptcy models, calculation of Economic Value Added and comparing with a competitive company. In addition, there is stated possible development of the company in the year 2012. The conclusion contents gained results and an evaluation of the financial situation of the company

Valuation of Poděbradka, a.s.

The main goal of this Master's Thesis is to determine the value of Poděbradka, a.s. as at 31 March 2015. Free cash flow to the firm model has been used for the valuation purposes. The work includes strategic and financial analyses which are used as a basis for financial plan. Consequently, discount rate is calculated and used further in the thesis. The main valuation method is supported by minor methods that are based on market comparison. Comparative analysis based on comparable traded companies and comparable transactions was performed. The thesis also include sensitivity analysis that explores influence of key factors on the enterprise value

Raman spectroscopy used to assess the temperature and mechanical stress in thin films of microelectronic structures

We are grateful to the scientific grant agency of the Ministry of Education, Science, Research and Sport of the Slovak Republic for financial support of project VEGA No. 1/0947/16.In this experimental work we examined the temperature and mechanical stress in the thin films of microelectronic structures based on GaN and AlN by Raman spectroscopy. The rise in temperature in the Raman spectrum is shown by shifting the Raman bands toward lower wavenumbers. Similarly like with changes of temperature, the changes of the positions of Raman bands may indicate the changes of mechanical stress in the structure. It was confirmed experimentally that in the case of tensile stress the Raman bands are shifted towards lower wavenumbers, and under compressive stress to higher wavenumbers

Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes

The semiconductor gallium nitride is the material at the centre of energy-efficient solid-state lighting and is becoming increasingly important in high-power and high-frequency electronics. Reducing the dislocation density of gallium nitride planar layers is important for improving the performance and reliability of devices, such as light-emitting diodes and high-electron-mobility transistors. The patterning of selective growth masks is one technique for forcing a three-dimensional growth mode in order to control the propagation of threading defects to the active device layers. The morphology of the three-dimensional growth front is determined by the relative growth rates of the different facets that are formed, and for GaN is typically limited by the slow-growing {1 −1 0 1} facets. We demonstrate how the introduction of nanodash growth windows can be oriented in an array to preserve fast-growing {1 1 −2 2} facets at the early stage of growth to accelerate coalescence of three-dimensional structures into a continuous GaN layer. Cathodoluminescence and Electron Channelling Contrast Imaging methods, both used to measure the threading dislocation density, reveal that the dislocations are organised and form a distinctive pattern according to the underlying mask. By optimising the arrangement of nanodashes and the nanodash density, the threading dislocation density of GaN on sapphire epilayers can be reduced significantly from 109 cm−2 to 3.0 × 107 cm−2. Raman spectroscopy, used to monitor the strain in the overgrown GaN epilayers, shows that the position of the GaN E2H phonon mode peak was reduced as the dash density increases for a sample grown via pendeo-epitaxy whilst no obvious change was recorded for a sample grown via more conventional epitaxial lateral overgrowth. These results show how growth mask design can be used to circumvent limitations imposed by the growth dynamics. Moreover, they have revealed a greater understanding of the influence of the growth process on the dislocation density which will lead to higher performing electronic and optoelectronic devices as a result of the lower dislocation densities achieved

Motion perception in patients with idiopathic bilateral vestibular hypofunction

We measured vestibular perceptual thresholds in patients with idiopathic bilateral vestibulopathy to assess the distribution of peripheral vestibular damage in this disorder. Thresholds were measured with standard psychometric techniques in 4 patients and compared with thresholds in normal subjects and patients with completely absent peripheral vestibular function. Motion paradigms included yaw rotation (testing the lateral canals), interaural translation (testing the utricles), superior-inferior translation (testing the saccules), and roll tilt (testing the vertical semicircular canals and the otolith organs). We found that perceptual thresholds were abnormally elevated in the patients with idiopathic bilateral vestibulopathy for yaw rotation at all frequencies and for interaural translation at only the lower frequencies. Thresholds were normal for the other 2 motion paradigms. The results demonstrate that the distribution of vestibular dysfunction in this disorder is not uniform but, rather, can affect lateral canal and utricular thresholds while relatively sparing vertical canal and saccular function

Cement Substitution in High-Temperature Concrete

An alternative binder to calcium aluminate cement (CAC) was prepared by the sol-gel method. Chemically pure systems such as tetraethylorthosilicate (SiC8H20O4) and nonahydrate of alumina nitrate (Al(NO3)3·9H2O) were used as major raw materials. The manufacturing process of binder via solution is mentioned, and transitions in binder structure as a function of thermal treatment in the range between 85 and 1400 °C are described. Finally, binder efficiency was verified by its application in high-temperature concrete instead of calcium aluminate cement (CAC). Newly developed sol-gel binder was characterized by XRFS quantitative analyses, XRD diffraction, STA-DTA and TG analyses and the BET method. Samples of concrete which were based on natural bauxite raw material showed cold compressive strength of 42 MPa compared to the same material where a conventional CAC was applied, and samples reached cold compressive strength of 44 MPa