ASi-Sii defect model of light-induced degradation (LID) in silicon: a discussion and review

The ASi-Sii defect model as one possible explanation for light-induced degradation (LID) in typically boron-doped silicon solar cells, detectors, and related systems is discussed and reviewed. Starting from the basic experiments which led to the ASi-Sii defect model, the ASi-Sii defect model (A: boron, or indium) is explained and contrasted to the assumption of a fast-diffusing so-called “boron interstitial.” An LID cycle of illumination and annealing is discussed within the conceptual frame of the ASi-Sii defect model. The dependence of the LID defect density on the interstitial oxygen concentration is explained within the ASi-Sii defect picture. By comparison of electron paramagnetic resonance data and minority carrier lifetime data related to the assumed fast diffusion of the “boron interstitial” and the annihilation of the fast LID component, respectively, the characteristic EPR signal Si-G28 in boron-doped silicon is related to a specific ASi-Sii defect state. Several other LID-related experiments are found to be consistent with an interpretation by an ASi-Sii defect

Development of low-gain avalanche detectors in the frame of the acceptor removal phenomenon

Low-gain avalanche detectors (LGAD) suffer from an acceptor removal phenomenon due to irradiation. This acceptor removal phenomenon is investigated in boron, gallium, and indium implanted samples by 4-point-probe (4pp) measurements, low-temperature photoluminescence spectroscopy (LTPL), and secondary ion mass spectrometry (SIMS) before and after irradiation with electrons and protons. Different co-implantation species are evaluated with respect to their ability to reduce the acceptor removal phenomenon. In case of boron, the beneficial effect is found to be most pronounced for the low-dose fluorine and high-dose nitrogen co-implantation. In case of gallium, the low-dose implantations of carbon and oxygen are found to be beneficial. For indium, the different co-implantation species have no beneficial effect. SIMS boron concentration depth profiles measured before and after irradiation show no indication of a fast movement of boron at room temperature. Hence, the discussed BSi-Sii-defect explanation approach of the acceptor removal phenomenon seems to be more likely than the other discussed Bi-Oi-defect explanation approach

Impact of Rotational Twin Boundaries and Lattice Mismatch on III-V Nanowire Growth

Pseudomorphic planar III-V transition layers greatly facilitate the epitaxial integration of vapor liquid solid grown III-V nanowires (NW) on Si(111) substrates. Heteroepitaxial (111) layer growth, however, is commonly accompanied by the formation of rotational twins. We find that rotational twin boundaries (RTBs), which intersect the surface of GaP/Si(111) heterosubstrates, generally cause horizontal NW growth and may even suppress NW growth entirely. Away from RTBs, the NW growth direction switches from horizontal to vertical in the case of homoepitaxial GaP NWs, whereas heteroepitaxial GaAs NWs continue growing horizontally. To understand this rich phenomenology, we develop a model based on classical nucleation theory. Independent of the occurrence of RTBs and specific transition layers, our model can generally explain the prevalent observation of horizontal III V NW growth-in lattice mismatched systems and the high crystal quality of horizontal nanowires.This work was financially supported by the BMBF (Project No. 03SF0404A) and partly by the Spanish Ministry of Economy (Project TEC2014-54260-C3-2-P). C.K. and L.W. acknowledge the Thuringia Graduate School for Photovoltaics “Photograd” for financial support. The authors would like to thank A. Paszuk and A. Nagelein for valuable discussions as well as A. Muller and M. Biester for technical support, T. Nieszner for supporting the determination of the spatial direction of NWs, and D. Roßberg for preparing the TEM lamella

Effect of inelastic ion collisions on low-gain avalanche detectors explained by an A_Si-Si_i-defect mode

The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the A_Si-Si_i-defect model. The assumption of fast diffusion of interstitial silicon is shown to be superfluous for the explanation of the B_Si-Si_i-defect formation under irradiation, particular at very low temperatures. The experimentally observed properties of the ARP are explained by the donor properties of the B_Si-Si_i-defect in its ground state. Additionally, low temperature photoluminescence spectra are reported for quenched boron doped silicon showing so far unidentified PL lines, which change due to well-known light-induced degradation (LID) treatments

A new valuation school : Integrating diverse values of nature in resource and land use decisions

We are increasingly confronted with severe social and economic impacts of environmental degradation all over the world. From a valuation perspective, environmental problems and conflicts originate from trade-offs between values. The urgency and importance to integrate nature's diverse values in decisions and actions stand out more than ever. Valuation, in its broad sense of 'assigning importance', is inherently part of most decisions on natural resource and land use. Scholars from different traditions -while moving from heuristic interdisciplinary debate to applied transdisciplinary science- now acknowledge the need for combining multiple disciplines and methods to represent the diverse set of values of nature. This growing group of scientists and practitioners share the ambition to explore how combinations of ecological, socio-cultural and economic valuation tools can support real-life resource and land use decision-making. The current sustainability challenges and the ineffectiveness of single-value approaches to offer relief demonstrate that continuing along a single path is no option. We advocate for the adherence of a plural valuation culture and its establishment as a common practice, by contesting and complementing ineffective and discriminatory single-value approaches. In policy and decision contexts with a willingness to improve sustainability, integrated valuation approaches can be blended in existing processes, whereas in contexts of power asymmetries or environmental conflicts, integrated valuation can promote the inclusion of diverse values through action research and support the struggle for social and environmental justice. The special issue and this editorial synthesis paper bring together lessons from pioneer case studies and research papers, synthesizing main challenges and setting out priorities for the years to come for the field of integrated valuation.Peer reviewe

Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH

Abstract III–V nanowires (NWs) possess great potential for use in future semiconductor technology. Alloying with dilute amounts of nitrogen provides further flexibility in tuning their material properties. In this study, we report on successful in situ nitrogen incorporation into GaP(N) NWs during growth via the Au-catalyzed vapor-liquid-solid (VLS) mechanism. The impact of the nitrogen precursur unsymmetrical dimethyl hydrazine (UDMH) on morphology was found to be overall beneficial as it strongly reduces tapering. Analysis of the crystal structure of NWs with and without N reveals zinc blende structure with an intermediate amount of stacking faults (SF). Interestingly, N incorporation leads to segments completely free of SFs, which are related to dislocations transverse to the growth direction

Impact of Rotational Twin Boundaries and Lattice Mismatch on III–V Nanowire Growth

Pseudomorphic planar III–V transition layers greatly facilitate the epitaxial integration of vapor–liquid–solid grown III–V nanowires (NW) on Si(111) substrates. Heteroepitaxial (111) layer growth, however, is commonly accompanied by the formation of rotational twins. We find that rotational twin boundaries (RTBs), which intersect the surface of GaP/Si(111) heterosubstrates, generally cause horizontal NW growth and may even suppress NW growth entirely. Away from RTBs, the NW growth direction switches from horizontal to vertical in the case of homoepitaxial GaP NWs, whereas heteroepitaxial GaAs NWs continue growing horizontally. To understand this rich phenomenology, we develop a model based on classical nucleation theory. Independent of the occurrence of RTBs and specific transition layers, our model can generally explain the prevalent observation of horizontal III–V NW growth in lattice mismatched systems and the high crystal quality of horizontal nanowires

Exome sequencing identifies breast cancer susceptibility genes and defines the contribution of coding variants to breast cancer risk

International audienceLinkage and candidate gene studies have identified several breast cancer susceptibility genes, but the overall contribution of coding variation to breast cancer is unclear. To evaluate the role of rare coding variants more comprehensively, we performed a meta-analysis across three large whole-exome sequencing datasets, containing 26,368 female cases and 217,673 female controls. Burden tests were performed for protein-truncating and rare missense variants in 15,616 and 18,601 genes, respectively. Associations between protein-truncating variants and breast cancer were identified for the following six genes at exome-wide significance (P < 2.5 × 10−6): the five known susceptibility genes ATM, BRCA1, BRCA2, CHEK2 and PALB2, together with MAP3K1. Associations were also observed for LZTR1, ATR and BARD1 with P < 1 × 10−4. Associations between predicted deleterious rare missense or protein-truncating variants and breast cancer were additionally identified for CDKN2A at exome-wide significance. The overall contribution of coding variants in genes beyond the previously known genes is estimated to be small