7 research outputs found
Silicon Betavoltaic Batteries Structures
For low-power miniature energy creation sources the particular interest is nickel Ni63. This paper discusses
the main types of betavoltaic battery structures with the prospects for industrial application using -
isotope of nickel Ni63. It is shown that the prospects for improving the effective efficiency are planar multijunction
betavoltaic batteries
Heterostructure Active Area Optimization by Simulation
Changing LED performance characteristics, depending on Indium atoms concentration and at different
temperatures were simulated. It was suggested that a LED having p-n junction area S0 can be considered
as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel, each SLED has its own In-content and
its own p-n junction area S(X). Good correlation in simulation and experimental results has been obtained.
It was determined that the best structure for AlGaInN NH is p+GaN / p+Al0.2Ga0.8N / 4(n-InxGa1 – xN-n-
GaN) / n+GaN. The main thing is that in the NH AA there are 4QW-in two central ones there is maximum
radiation and two ones at the both ends of active region are “barriers” which help to concentrate electrons
/ holes in active region and additionally “protect” QW from different defects
Heterostructure Active Area Optimization by Simulation
Changing LED performance characteristics, depending on Indium atoms concentration and at different
temperatures were simulated. It was suggested that a LED having p-n junction area S0 can be considered
as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel, each SLED has its own In-content and
its own p-n junction area S(X). Good correlation in simulation and experimental results has been obtained.
It was determined that the best structure for AlGaInN NH is p+GaN / p+Al0.2Ga0.8N / 4(n-InxGa1 – xN-n-
GaN) / n+GaN. The main thing is that in the NH AA there are 4QW-in two central ones there is maximum
radiation and two ones at the both ends of active region are “barriers” which help to concentrate electrons
/ holes in active region and additionally “protect” QW from different defects
The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply
In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics
when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown
that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It
has been observed that the concentration of the lightly doped region more significantly influence on the
current-voltage characteristics than the depth of the p-n-junction. The concentration of the n-region, equal
to 1014 cm – 3, can be considered as during betavoltaic power supply design. It is shown that, by increasing
the power supply activity the conversion efficiency of the structure increases, too
The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance
In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of
their investigation are presented. The results of the program usage based on an example of calculating the
influence of the high-resistance "well" thickness in the silicon p-i-n-diode spectral response are discussed.
For the accuracy of the program estimation it was compared the theoretical spectral characteristics of a silicon
PIN-diode 5 kOhm substrate with the experimental data
The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance
In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of
their investigation are presented. The results of the program usage based on an example of calculating the
influence of the high-resistance "well" thickness in the silicon p-i-n-diode spectral response are discussed.
For the accuracy of the program estimation it was compared the theoretical spectral characteristics of a silicon
PIN-diode 5 kOhm substrate with the experimental data