In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of
their investigation are presented. The results of the program usage based on an example of calculating the
influence of the high-resistance "well" thickness in the silicon p-i-n-diode spectral response are discussed.
For the accuracy of the program estimation it was compared the theoretical spectral characteristics of a silicon
PIN-diode 5 kOhm substrate with the experimental data
