Prebiotic effects: metabolic and health benefits

The different compartments of the gastrointestinal tract are inhabited by populations of micro-organisms. By far the most important predominant populations are in the colon where a true symbiosis with the host exists that is a key for well-being and health. For such a microbiota, 'normobiosis' characterises a composition of the gut 'ecosystem' in which micro-organisms with potential health benefits predominate in number over potentially harmful ones, in contrast to 'dysbiosis', in which one or a few potentially harmful micro-organisms are dominant, thus creating a disease-prone situation. The present document has been written by a group of both academic and industry experts (in the ILSI Europe Prebiotic Expert Group and Prebiotic Task Force, respectively). It does not aim to propose a new definition of a prebiotic nor to identify which food products are classified as prebiotic but rather to validate and expand the original idea of the prebiotic concept (that can be translated in 'prebiotic effects'), defined as: 'The selective stimulation of growth and/or activity(ies) of one or a limited number of microbial genus(era)/species in the gut microbiota that confer(s) health benefits to the host.' Thanks to the methodological and fundamental research of microbiologists, immense progress has very recently been made in our understanding of the gut microbiota. A large number of human intervention studies have been performed that have demonstrated that dietary consumption of certain food products can result in statistically significant changes in the composition of the gut microbiota in line with the prebiotic concept. Thus the prebiotic effect is now a well-established scientific fact. The more data are accumulating, the more it will be recognised that such changes in the microbiota's composition, especially increase in bifidobacteria, can be regarded as a marker of intestinal health. The review is divided in chapters that cover the major areas of nutrition research where a prebiotic effect has tentatively been investigated for potential health benefits. The prebiotic effect has been shown to associate with modulation of biomarkers and activity(ies) of the immune system. Confirming the studies in adults, it has been demonstrated that, in infant nutrition, the prebiotic effect includes a significant change of gut microbiota composition, especially an increase of faecal concentrations of bifidobacteria. This concomitantly improves stool quality (pH, SCFA, frequency and consistency), reduces the risk of gastroenteritis and infections, improves general well-being and reduces the incidence of allergic symptoms such as atopic eczema. Changes in the gut microbiota composition are classically considered as one of the many factors involved in the pathogenesis of either inflammatory bowel disease or irritable bowel syndrome. The use of particular food products with a prebiotic effect has thus been tested in clinical trials with the objective to improve the clinical activity and well-being of patients with such disorders. Promising beneficial effects have been demonstrated in some preliminary studies, including changes in gut microbiota composition (especially increase in bifidobacteria concentration). Often associated with toxic load and/or miscellaneous risk factors, colon cancer is another pathology for which a possible role of gut microbiota composition has been hypothesised. Numerous experimental studies have reported reduction in incidence of tumours and cancers after feeding specific food products with a prebiotic effect. Some of these studies (including one human trial) have also reported that, in such conditions, gut microbiota composition was modified (especially due to increased concentration of bifidobacteria). Dietary intake of particular food products with a prebiotic effect has been shown, especially in adolescents, but also tentatively in postmenopausal women, to increase Ca absorption as well as bone Ca accretion and bone mineral density. Recent data, both from experimental models and from human studies, support the beneficial effects of particular food products with prebiotic properties on energy homaeostasis, satiety regulation and body weight gain. Together, with data in obese animals and patients, these studies support the hypothesis that gut microbiota composition (especially the number of bifidobacteria) may contribute to modulate metabolic processes associated with syndrome X, especially obesity and diabetes type 2. It is plausible, even though not exclusive, that these effects are linked to the microbiota-induced changes and it is feasible to conclude that their mechanisms fit into the prebiotic effect. However, the role of such changes in these health benefits remains to be definitively proven. As a result of the research activity that followed the publication of the prebiotic concept 15 years ago, it has become clear that products that cause a selective modification in the gut microbiota's composition and/or activity(ies) and thus strengthens normobiosis could either induce beneficial physiological effects in the colon and also in extra-intestinal compartments or contribute towards reducing the risk of dysbiosis and associated intestinal and systemic pathologies

DMTs and Covid-19 severity in MS: a pooled analysis from Italy and France

We evaluated the effect of DMTs on Covid-19 severity in patients with MS, with a pooled-analysis of two large cohorts from Italy and France. The association of baseline characteristics and DMTs with Covid-19 severity was assessed by multivariate ordinal-logistic models and pooled by a fixed-effect meta-analysis. 1066 patients with MS from Italy and 721 from France were included. In the multivariate model, anti-CD20 therapies were significantly associated (OR = 2.05, 95%CI = 1.39–3.02, p < 0.001) with Covid-19 severity, whereas interferon indicated a decreased risk (OR = 0.42, 95%CI = 0.18–0.99, p = 0.047). This pooled-analysis confirms an increased risk of severe Covid-19 in patients on anti-CD20 therapies and supports the protective role of interferon

Deterministic placement of doping atoms on silanol surfaces for ultimate devices

En raison de la miniaturisation des dispositifs pour semi-conducteurs, le caractère aléatoire de la distribution de dopants dans un dispositif devient un paramètre critique pour les performances de ce dernier. Le but de ce travail est de valider une stratégie de dopage du silicium par un positionnement contrôlé de molécules, alternatif aux implantations, afin de limiter la variabilité de la tension de seuil. Nous avons choisi de contrôler la densité des sites et le positionnement des dopants en combinant le contrôle de la densité des sites d'ancrage et l'utilisation de molécules à fort encombrement stérique. Ceci a été réalisé en étudiant dans un premier temps le greffage de bore sur les silanols de silice amorphe partiellement traitée en température, à partir de molécules porteuses présentant des ligands de différentes tailles et des symétries ; le modèle de greffage a pu être déterminé en utilisant différentes techniques analytiques (IR-DRIFT, multi-core SSRMN et analyses élémentaires). L’élimination des ligands par un traitement thermique a permis de réaliser la fixation du Bore sur la silice avec un rendement supérieur à 96%. Cette méthode a été transférée avec succès à des wafers de silicium recouverts de silice native. Le recuit à haute température permettant la redistribution du bore dans le silicium a été ensuite validée par l’analyse VPD-ICPMS de l’oxyde greffé couplées aux mesures de profil de dopant dans le silicium obtenues par TofSIMS. Ce traitement a conduit à définir un procédé optimal par greffage sur silice mince, donnant des concentrations de dopant dans le silicium équivalentes à celles rapportées par la littérature sur silicium désoxydé, et sans passivation additionnelle de silice pour éviter la volatilisation du Bore greffé. En effet, la taille des ligands permet de contrôler la volatilisation du bore pendant recuit. Les analyses électriques par spectroscopie à effet tunnel ont confirmé l’activation électrique du dopant apporté par greffage et diffusé dans le siliciumWith the everlasting shrinking of semiconductor devices, the randomness of dopant distribution within a device becomes more likely to critically impact the performance of the latter. The aim of this work is to validate a silicon doping strategy through a controlled positioning of molecules in place of conventional implantations in order to limit the variability of the threshold tension. In contrast to previous works, doping atoms were directly grafted onto a thin silica layer and not onto a bare silicon surface. Here, we chose to control both site density and positioning by combining the control of site anchoring density and the use of sterically hindered molecules to yield a finely structured doped surface. This was carried out by first optimizing this approach by studying the grafting of boron compounds with ligands of various sizes and symmetries on the surface silanols of non - porous amorphous silica partially treated at high temperatures (700 °C) as a model system. This allowed obtaining a fully characterization of surface species through combined analytical techniques (IR-DRIFT, solidstate multi-core NMR and elemental analyses). The ligands were then eliminated by a thermal treatment, yielding surface boronic acids characterized by IR-DRIFT and NMR with optimal density (> 96%, 6.7*1013 B.cm-²). This technology was then successfully transferred to silicon wafers covered with native silica as evidenced by ICPMS analyses of the grafted oxide layer removed in HF droplet (VPD). Subsequent high temperature annealing step without capping in order to trigger diffusion of boron was then validated on silicon wafers using ICPMS in HF-dipped oxide and in silicon by TofSIMS profile measurements. Such treatment led to a dopant concentration in the silicon matrix equivalent to that reported in the literature (e.g. direct grafting on silicon and cap during annealing). Electrical analyses by tunnel spectroscopy showed the efficiency of the annealing step and confirmed the dopant amount in the surface layer of the silicon wafe

Deterministic placement of doping atoms on silanol surfaces for ultimate devices

En raison de la miniaturisation des dispositifs pour semi-conducteurs, le caractère aléatoire de la distribution de dopants dans un dispositif devient un paramètre critique pour les performances de ce dernier. Le but de ce travail est de valider une stratégie de dopage du silicium par un positionnement contrôlé de molécules, alternatif aux implantations, afin de limiter la variabilité de la tension de seuil. Nous avons choisi de contrôler la densité des sites et le positionnement des dopants en combinant le contrôle de la densité des sites d'ancrage et l'utilisation de molécules à fort encombrement stérique. Ceci a été réalisé en étudiant dans un premier temps le greffage de bore sur les silanols de silice amorphe partiellement traitée en température, à partir de molécules porteuses présentant des ligands de différentes tailles et des symétries ; le modèle de greffage a pu être déterminé en utilisant différentes techniques analytiques (IR-DRIFT, multi-core SSRMN et analyses élémentaires). L’élimination des ligands par un traitement thermique a permis de réaliser la fixation du Bore sur la silice avec un rendement supérieur à 96%. Cette méthode a été transférée avec succès à des wafers de silicium recouverts de silice native. Le recuit à haute température permettant la redistribution du bore dans le silicium a été ensuite validée par l’analyse VPD-ICPMS de l’oxyde greffé couplées aux mesures de profil de dopant dans le silicium obtenues par TofSIMS. Ce traitement a conduit à définir un procédé optimal par greffage sur silice mince, donnant des concentrations de dopant dans le silicium équivalentes à celles rapportées par la littérature sur silicium désoxydé, et sans passivation additionnelle de silice pour éviter la volatilisation du Bore greffé. En effet, la taille des ligands permet de contrôler la volatilisation du bore pendant recuit. Les analyses électriques par spectroscopie à effet tunnel ont confirmé l’activation électrique du dopant apporté par greffage et diffusé dans le siliciumWith the everlasting shrinking of semiconductor devices, the randomness of dopant distribution within a device becomes more likely to critically impact the performance of the latter. The aim of this work is to validate a silicon doping strategy through a controlled positioning of molecules in place of conventional implantations in order to limit the variability of the threshold tension. In contrast to previous works, doping atoms were directly grafted onto a thin silica layer and not onto a bare silicon surface. Here, we chose to control both site density and positioning by combining the control of site anchoring density and the use of sterically hindered molecules to yield a finely structured doped surface. This was carried out by first optimizing this approach by studying the grafting of boron compounds with ligands of various sizes and symmetries on the surface silanols of non - porous amorphous silica partially treated at high temperatures (700 °C) as a model system. This allowed obtaining a fully characterization of surface species through combined analytical techniques (IR-DRIFT, solidstate multi-core NMR and elemental analyses). The ligands were then eliminated by a thermal treatment, yielding surface boronic acids characterized by IR-DRIFT and NMR with optimal density (> 96%, 6.7*1013 B.cm-²). This technology was then successfully transferred to silicon wafers covered with native silica as evidenced by ICPMS analyses of the grafted oxide layer removed in HF droplet (VPD). Subsequent high temperature annealing step without capping in order to trigger diffusion of boron was then validated on silicon wafers using ICPMS in HF-dipped oxide and in silicon by TofSIMS profile measurements. Such treatment led to a dopant concentration in the silicon matrix equivalent to that reported in the literature (e.g. direct grafting on silicon and cap during annealing). Electrical analyses by tunnel spectroscopy showed the efficiency of the annealing step and confirmed the dopant amount in the surface layer of the silicon wafe

Placement déterministe de dopants pour dispositifs ultimes

With the everlasting shrinking of semiconductor devices, the randomness of dopant distribution within a device becomes more likely to critically impact the performance of the latter. The aim of this work is to validate a silicon doping strategy through a controlled positioning of molecules in place of conventional implantations in order to limit the variability of the threshold tension. In contrast to previous works, doping atoms were directly grafted onto a thin silica layer and not onto a bare silicon surface. Here, we chose to control both site density and positioning by combining the control of site anchoring density and the use of sterically hindered molecules to yield a finely structured doped surface. This was carried out by first optimizing this approach by studying the grafting of boron compounds with ligands of various sizes and symmetries on the surface silanols of non - porous amorphous silica partially treated at high temperatures (700 °C) as a model system. This allowed obtaining a fully characterization of surface species through combined analytical techniques (IR-DRIFT, solidstate multi-core NMR and elemental analyses). The ligands were then eliminated by a thermal treatment, yielding surface boronic acids characterized by IR-DRIFT and NMR with optimal density (> 96%, 6.7*1013 B.cm-²). This technology was then successfully transferred to silicon wafers covered with native silica as evidenced by ICPMS analyses of the grafted oxide layer removed in HF droplet (VPD). Subsequent high temperature annealing step without capping in order to trigger diffusion of boron was then validated on silicon wafers using ICPMS in HF-dipped oxide and in silicon by TofSIMS profile measurements. Such treatment led to a dopant concentration in the silicon matrix equivalent to that reported in the literature (e.g. direct grafting on silicon and cap during annealing). Electrical analyses by tunnel spectroscopy showed the efficiency of the annealing step and confirmed the dopant amount in the surface layer of the silicon waferEn raison de la miniaturisation des dispositifs pour semi-conducteurs, le caractère aléatoire de la distribution de dopants dans un dispositif devient un paramètre critique pour les performances de ce dernier. Le but de ce travail est de valider une stratégie de dopage du silicium par un positionnement contrôlé de molécules, alternatif aux implantations, afin de limiter la variabilité de la tension de seuil. Nous avons choisi de contrôler la densité des sites et le positionnement des dopants en combinant le contrôle de la densité des sites d'ancrage et l'utilisation de molécules à fort encombrement stérique. Ceci a été réalisé en étudiant dans un premier temps le greffage de bore sur les silanols de silice amorphe partiellement traitée en température, à partir de molécules porteuses présentant des ligands de différentes tailles et des symétries ; le modèle de greffage a pu être déterminé en utilisant différentes techniques analytiques (IR-DRIFT, multi-core SSRMN et analyses élémentaires). L’élimination des ligands par un traitement thermique a permis de réaliser la fixation du Bore sur la silice avec un rendement supérieur à 96%. Cette méthode a été transférée avec succès à des wafers de silicium recouverts de silice native. Le recuit à haute température permettant la redistribution du bore dans le silicium a été ensuite validée par l’analyse VPD-ICPMS de l’oxyde greffé couplées aux mesures de profil de dopant dans le silicium obtenues par TofSIMS. Ce traitement a conduit à définir un procédé optimal par greffage sur silice mince, donnant des concentrations de dopant dans le silicium équivalentes à celles rapportées par la littérature sur silicium désoxydé, et sans passivation additionnelle de silice pour éviter la volatilisation du Bore greffé. En effet, la taille des ligands permet de contrôler la volatilisation du bore pendant recuit. Les analyses électriques par spectroscopie à effet tunnel ont confirmé l’activation électrique du dopant apporté par greffage et diffusé dans le siliciu

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La légende de saint Edmond : de la tête du royaume à la tête du martyr

Texte issu des actes des journées d'études "Des saints et des rois : l'hagiographie au service de l'histoire" organisées le 7 décembre 2010 à Clermont-Ferrand et le 5 avril 2011 à Paris en collaboration avec le Centre d'Études du Moyen Âge (CEMA) de Paris III.International audienc

Experimental and numerical analyses of variability in the responses of imperfect slender free rigid blocks under random dynamic excitations

International audienceDue to the well-known sensitivity of the behaviors of free structures under seismic excitations, the question of the aptitude of a numerical model to accurately represent them arise. To contribute to the answer to this question, this article presents experiments which were carried out on the shaking table of CEA/Saclay in France, on three rigid blocks with geometrical defects, inevitably due to the manufacturing process, subjected to 100 realizations of a random process. These tests were analyzed using specifically-developed indicators, and compared with the results yielded by two numerical models, one with a symmetrical geometry and the other with a non-symmetrical geometry, calibrated to reproduce out-of-plane behavior identified through release tests. Counter-intuitively, this article shows that a numerical model can predict motion over a longer period than an experiment performed on a supposedly identical block. From a statistical point of view, despite experimental uncertainties this article shows a good agreement between numerical and experimental results. Finally, a numerical study, performed using artificial seismic signals, showed that the assumption of perfect geometry can lead to an underestimation of the risk of overturning. Moreover, it is showed that a symmetrical model with a realistic slenderness correction can provide an overestimation of this risk under 1D excitation, but not in 2D

La légende de saint Edmond : de la tête du royaume à la tête du martyr

Texte issu des actes des journées d'études "Des saints et des rois : l'hagiographie au service de l'histoire" organisées le 7 décembre 2010 à Clermont-Ferrand et le 5 avril 2011 à Paris en collaboration avec le Centre d'Études du Moyen Âge (CEMA) de Paris III.International audienc

Experimental and numerical response of rigid slender blocks with geometrical defects under seismic excitation

The present work investigates on the influence of small geometrical defects on the behavior of slender rigid blocks. A comprehensive experimental campaign was carried out on one of the shake tables of CEA/Saclay in France. The tested model was a massive steel block with standard manufacturing quality. Release, free oscillations tests as well as shake table tests revealed a non-negligible out-of-plane motion even in the case of apparently plane initial conditions or excitations. This motion exhibits a highly reproducible part for a short duration that was used to calibrate a numerical geometrically asymmetrical model. The stability of this model when subjected to 2 000 artificial seismic horizontal bidirectional signals was compared to the stability of a symmetrical one. This study showed that the geometrical imperfections slightly increase the rocking and overturning probabilities under bidirectional seismic excitations in a narrow range of peak ground acceleration