Electrical properties of sulfonated polyaniline (Span) and polyaniline (Pani) polymers grown on conventional and high index GaAs substrates

The electrical properties of sulfonated polyaniline (SPAN) and polyaniline (PANI) grown on both conventional (100) and high Miller index GaAs surfaces are investigated. These devices were electrically characterized using Current-Voltage (I-V), Capacitance-Voltage (C-V), Capacitance-Frequency (C-F), Capacitance-Conductance-Frequency (C-G-F), Deep Level Transient Spectroscopy (DLTS), and Laplace DLTS measurements in the temperature range 20 – 440 K. Electrically active defects are generated at/near the interface and away from the interface with energy levels deep in the bandgap of the materials. These defects considerably affect the electrical and optical properties of the devices. This thesis reports the effect of n-type GaAs substrate orientation, namely (100), (311)A and (311)B, on the electrical properties of sulfonated polyaniline (SPAN)/GaAs heterojunction devices. It was found that the interface state density (Dit) of SPAN/(311)B GaAs samples is lower than that of (100) and (311)A GaAs devices. This behaviour is attributed to the effect of crystallographic orientation of the substrates, and was confirmed by DLTS results as well. In addition, the inhomogeneity of the interface between various GaAs substrates and SPAN is investigated in terms of barrier height and ideality factor by performing I–V measurements at different temperatures (20–420 K). The I–V results indicate that the value of the rectification ratio (IF/IR) at 0.5 V is higher for SPAN/(311)B GaAs samples than for SPAN/(100) GaAs and SPAN/(311)A GaAs samples. Moreover, the barrier height decreases and the ideality factor increases with decreasing temperature for all three heterostructure devices. This thesis also reports an extensive study of the electrical properties of PANI/GaAs (organic-inorganic) hybrid heterojunctions. Polyaniline (PANI) thin films were deposited by a very simple technique on (100), (311)A and (311)B ntype Gallium Arsenide (GaAs) substrates to fabricate hybrid devices with excellent electrical properties. The DLTS and Laplace DLTS measurements illustrated that the number of defects at/very close to the interface region in PANI/(311)A GaAs samples is lower than those of PANI/(100) GaAs and PANI/(311)B GaAs samples. Moreover, the analysis of I–V characteristics based on the thermionic emission mechanism has shown a decrease of the barrier height and an increase of the ideality factor at lower temperatures for all the three hybrid devices. The interface states were analysed by series resistance obtained using the C–G–V methods. The interface state density (Dit) of PANI/(100) GaAs devices is approximately one and two order of magnitude higher than that of PANI/(311)B GaAs and PANI/(311)A GaAs devices, respectively. Additionally, the devices show excellent air stability, with rectification ratio values almost unaltered after two years of storage under ambient conditions, making the polyaniline an interesting conductor polymer for future devices applications

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes

Forward and reverse current-voltage (IV) of Ti/Au/n-Al0.33Ga0.67As/n-GaAs/n-Al0.33Ga0.67As multi-quantum well (MQW) Schottky diodes were measured over a range of temperatures from 20 to 400 K by a step of 20 K. The Schottky diodes parameters were then extracted from these characteristics. The Cheung method is used for this purpose, assuming a thermionic conduction mechanism. The extracted ideality factor decrease with increasing temperatures. But their values at low temperatures were found to be unrealistic. In order to explain this uncertainty, three assumptions were explored. Firstly an assumed inhomogeneous barrier height gave better parameters especially the Richardson constant but the ideality factor is still unrealistic at low temperatures. Secondly, by using numerical simulation, it was demonstrated that defects including interface states are not responsible for the apparent unrealistic Schottky diode parameters. The third assumption is the tunnelling mechanism through the barrier in the low temperature range. At these lower temperatures, the tunnelling mechanism was more suitable to explain the extracted parameters values

Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures

In this work we present a detailed study of the influence of the GaAs substrate orientation on the electrical properties of heterojunctions based on GaAs and sulfonated polyaniline (SPAN) using Current-Voltage (I-V), Capacitance-Voltage (C-V), Deep-Level Transient Spectroscopy (DLTS) and Laplace DLTS techniques. Three different GaAs substrate orientations have been investigated, namely (1 0 0), (3 1 1)A and (3 1 1)B. The I-V results revealed that the turn-on voltage (Von) of SPAN/(3 1 1)B GaAs heterojunction is higher than that for SPAN/(1 0 0) GaAs and SPAN/(3 1 1)A GaAs heterojunctions. The DLTS results showed that the number of electrically active defects present in devices based on the lower index (1 0 0) plane of GaAs substrate is higher than those of higher index (3 1 1)A and (3 1 1)B GaAs substrates, corroborating with I-V results. In order to investigate the role of interface states, capacitance-frequency measurements were performed in forward bias on all three devices

Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current–Voltage, Capacitance–Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed

Effect of erbium-doping concentration on the electrical, structural and morphological properties of heterostructures based on TiO2 thin films

Effect of erbium (Er) doping on the electrical, structural and morphological properties of TiO2 thin films deposited by the combination of a simple sol–gel process and spin-coating technique on p-type silicon substrates, has been investigated. A systematic study of the effect of concentration of Er on the properties of heterostructures was carried out. Raman spectroscopy and atomic force microscopy have been used to study the structural and morphology properties of devices based on Er-doped TiO2/Si heterostructures. Deep level transient spectroscopy (DLTS) has been also employed to study the electrically active defects within the band gap of Er-doped TiO2 thin films. DLTS that has proved to be a powerful tool in analysing traps in semiconductors devices showed that undoped TiO2-based devices exhibit five defects. However, three defects have been detected in the low erbium-doped TiO2 devices and only one defect was observed in the higher erbium-doped devices. These results provide strong evidence that Er doping annihilates oxygen-related defects and demonstrate the effective proof of doping process in TiO2 thin film. This finding contributes to the improved activities (e.g., photocatalytic) of TiO2 since the increase in charge traps can reduce bulk recombination and consequently, separates photogenerated electrons and holes more efficiently. Furthermore, it is found that the overall electrical properties of the devices are improved by increasing Er doping concentration. This study provides an important understanding of the deep and shallow level defects in Er-doped TiO2 thin films, which is essential for the manufacturing of future devices including UV detectors

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR_D, E2QWR_D, and E3QWR_D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively

Electrical properties of sulfonated polyaniline (Span) and polyaniline (Pani) polymers grown on conventional and high index GaAs substrates

The electrical properties of sulfonated polyaniline (SPAN) and polyaniline (PANI) grown on both conventional (100) and high Miller index GaAs surfaces are investigated. These devices were electrically characterized using Current-Voltage (I-V), Capacitance-Voltage (C-V), Capacitance-Frequency (C-F), Capacitance-Conductance-Frequency (C-G-F), Deep Level Transient Spectroscopy (DLTS), and Laplace DLTS measurements in the temperature range 20 – 440 K. Electrically active defects are generated at/near the interface and away from the interface with energy levels deep in the bandgap of the materials. These defects considerably affect the electrical and optical properties of the devices. This thesis reports the effect of n-type GaAs substrate orientation, namely (100), (311)A and (311)B, on the electrical properties of sulfonated polyaniline (SPAN)/GaAs heterojunction devices. It was found that the interface state density (Dit) of SPAN/(311)B GaAs samples is lower than that of (100) and (311)A GaAs devices. This behaviour is attributed to the effect of crystallographic orientation of the substrates, and was confirmed by DLTS results as well. In addition, the inhomogeneity of the interface between various GaAs substrates and SPAN is investigated in terms of barrier height and ideality factor by performing I–V measurements at different temperatures (20–420 K). The I–V results indicate that the value of the rectification ratio (IF/IR) at 0.5 V is higher for SPAN/(311)B GaAs samples than for SPAN/(100) GaAs and SPAN/(311)A GaAs samples. Moreover, the barrier height decreases and the ideality factor increases with decreasing temperature for all three heterostructure devices. This thesis also reports an extensive study of the electrical properties of PANI/GaAs (organic-inorganic) hybrid heterojunctions. Polyaniline (PANI) thin films were deposited by a very simple technique on (100), (311)A and (311)B ntype Gallium Arsenide (GaAs) substrates to fabricate hybrid devices with excellent electrical properties. The DLTS and Laplace DLTS measurements illustrated that the number of defects at/very close to the interface region in PANI/(311)A GaAs samples is lower than those of PANI/(100) GaAs and PANI/(311)B GaAs samples. Moreover, the analysis of I–V characteristics based on the thermionic emission mechanism has shown a decrease of the barrier height and an increase of the ideality factor at lower temperatures for all the three hybrid devices. The interface states were analysed by series resistance obtained using the C–G–V methods. The interface state density (Dit) of PANI/(100) GaAs devices is approximately one and two order of magnitude higher than that of PANI/(311)B GaAs and PANI/(311)A GaAs devices, respectively. Additionally, the devices show excellent air stability, with rectification ratio values almost unaltered after two years of storage under ambient conditions, making the polyaniline an interesting conductor polymer for future devices applications

Deep-level transient spectroscopy of interfacial states in “buffer-free” p-i-n GaSb/GaAs devices

International audienceA systematic study was carried out on defect states in Interfacial Misfit (IMF) unpassivated and Te-passivated IMF in p-i-n GaSb/GaAs devices using Deep Level Transient Spectroscopy (DLTS) and Laplace DLTS. Additionally, Current-Voltage (I–V) measurements were performed, which showed that the turn-on voltage (Von) of passivated samples is lower than that for unpassivated samples; an effect which can be explained by the introduction of new defects states near to the interface of GaSb/GaAs, where Te was incorporated to passivate the IMF. The Capacitance-Voltage (C-V) analysis demonstrates that these new states are the consequence of adding Te at the misfit of GaSb/GaAs. Furthermore, DLTS measurements reveal a distribution of states including a main midgap energy level, namely the well documented EL2 trap, with some peculiar behaviour. Most of these levels are related to interface states that are generated by the mismatch between GaAs and GaSb. Originally, the addition of Te atoms was thought to passivate these interface states. On the contrary, this paper, which attempts at correlating the current-voltage and capacitance-voltage characteristics to the DLTS results, shows clearly that Te atoms increase the density of interface states

Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation

International audienceThe effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction

KSB. Geschaeftsbericht 2002

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