Exciton Gas Compression and Metallic Condensation in a Single Semiconductor Quantum Wire

We study the metal-insulator transition in individual self-assembled quantum wires and report optical evidences of metallic liquid condensation at low temperatures. Firstly, we observe that the temperature and power dependence of the single nanowire photoluminescence follow the evolution expected for an electron-hole liquid in one dimension. Secondly, we find novel spectral features that suggest that in this situation the expanding liquid condensate compresses the exciton gas in real space. Finally, we estimate the critical density and critical temperature of the phase transition diagram at $n_c\sim1\times10^5$ cm$^{-1}$ and $T_c\sim35$ K, respectively.Comment: 4 pages, 5 figure

Charge control in laterally coupled double quantum dots

We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunnelling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system.Comment: 4 pages, 4 figures submitted to PRB Rapid Com

Near-field scanning optical microscopy to study nanometric structural details of LiNbO3 Zn-diffused channel waveguides

A near-field scanning optical microscope (NSOM) is used to perform structural and optical characterization of the surface layer after Zn diffusion in a channel waveguide fabricated on lithium niobate. A theoretical approach has been developed in order to extract refractive index contrast from NSOM optical transmission measurements (illumination configuration). As a result, different solid phases present on the sample surface can be identified, such as ZnO and ZnNb2O6. They appear like submicrometric crystallites aligned along the domain wall direction, whose origin can be ascribed to some strain relaxation mechanism during the annealing process after Zn [email protected]

THERMAL ACTIVATED CARRIER TRANSFER BETWEEN InAs QUANTUM DOTS IN VERY LOW DENSITY SAMPLES

During the last decade, a great effort has been made studying the temperature evolution of QD emission, obtaining good agreements between experimental data and theoretical models. Thermal escape through wetting layer (WL) or by phonon assisted tunneling is usually claimed to describe carrier transfer in monomodal and bimodal QDs distributions. In the present study we have analyzed this phenomenon in two different samples containing a very low density of InAs/GaAs QDs, namely 16.5 and 25 QD/?m2 (Samples I and II, respectively). A detailed experimental study as a function of temperature has been carried out by using ensemble photoluminescence (PL), micro-PL and time resolved PL (TRPL) techniques. In both samples coexist two QD size distributions: (i) a small size one emitting in the region 1.25-1.35 eV (SQD family) and (ii) a large size one emitting in the region 1.05-1.20 eV (LQD family), as shown in Figs. 1.a-b. In sample I the SQD family dominates in intensity and the opposite is observed in Sample II, yet their temperature evolution is similar. An increase of the LQD integrated intensity is observed simultaneously with the decrease of the SDQ band, as observed in Figs. 1.c-d. This behavior is corroborated by the first time by Micro-PL of single QDs (see Fig. 1.e) belonging to both families detected simultaneously. The experiment is performed by using a multimode optical fiber in the detection arm of our confocal microscope and a monomode optical fiber to excite the SQD. A set of balance equations is used to reproduce the measured temperature evolution of the whole PL spectrum by introducing the transfer between SQD towards neighbor LQDs via WL states and the measured TRPL data

Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates

3 figuras, 3 páginas.We report on the growth by molecular beam epitaxy and the study by atomic force microscopy and photoluminescence of low density metamorphic InAs/InGaAs quantum dots. subcritical InAs coverages allow to obtain 108 cm−2 dot density and metamorphic InxGa1−xAs (x = 0.15,0.30) confining layers result in emission wavelengths at 1.3 μm. We discuss optimal growth parameters and demonstrate single quantum dot emission up to 1350 nm at low temperatures, by distinguishing the main exciton complexes in these nanostructures. Reported results indicate that metamorphic quantum dots could be valuable candidates as single photon sources for long wavelength telecom windows.the financial support of the Generalitat Valenciana and the Spanish Ministry of Science (Project Nos. PROMETEO/2009/074 and TEC2008-06756-C03-03, respectively).Peer reviewe

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples. © 2012 American Institute of Physics.We gratefully acknowledge the financial support of the Generalitat Valenciana, Comunidad Autnoma de Madrid and the Spanish Ministry Projects Nos. PROMETEO/2009/074, S2009ESP-1503 and TEC-2008-06756-C03-03, TEC2011-29120-C05-04/01. One of the authors D. Rivas thanks the Ministry of Science for his FPI fellowship. The AFM characterization has been carried out at CIM, University of Parma, Italy.Peer Reviewe

Photoluminescence Enhancement by Band Alignment Engineering in MoS2/FePS3 van der Waals Heterostructures

Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled changes to the environment and the chemical potential of the material. However, a drastic emission quench has been generally observed when TMDs are stacked in van der Waals heterostructures, which often favor the nonradiative recombination of photocarriers. Herein, we achieve an enhancement of the photoluminescence of single-layer MoS2 on top of van der Waals FePS3. The optimal energy band alignment of this heterostructure preserves light emission of MoS2 against nonradiative interlayer recombination processes and favors the charge transfer from MoS2, an n-type semiconductor, to FePS3, a p-type narrow-gap semiconductor. The strong depletion of carriers in the MoS2 layer is evidenced by a dramatic increase in the spectral weight of neutral excitons, which is strongly modulated by the thickness of the FePS3 underneath, leading to the increase of photoluminescence intensity. The present results demonstrate the potential for the rational design of van der Waals heterostructures with advanced optoelectronic properties.The authors acknowledge funding from Generalitat Valenciana through grants IDIFEDER/2020/005, IDIFEDER/2018/061, PROMETEO Program and PO FEDER Program, the APOSTD/2020/249 fellowship for M.R., and support from the Plan Gen-T of Excellence for J.J.B. (CDEIGENT/ 2019/022), J.C.-F. (CIDEGENT/2018/005), and M.R.C (CideGenT2018004); from the Spanish MCINN through grants PLASTOP PID2020-119124RB-I00, 2D-HETEROS PID2020-117152RB-100, and Excellence Unit “María de Maeztu” CEX2019-000919-M; and from the European Union (ERC-2021-StG-101042680 2D-SMARTiES and ERC AdG Mol-2D 788222)

Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots

[EN] We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 μeV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (≈65 μeV). The observed electronic structure covers the demands of future quantum information technologiesThe authors want to acknowledge the financial support from Spanish government through grants QD-NANOTICS: TEC2011-29120-C05-01, EPIC-NANOTICS: TEC2011-29120-C05-04, PROMESA: ENE2012-37804-C02-02, and Q&C Light: S2009ESP-1503. We also thank the support from the PROMETEO2009/74 project (Generalitat Valenciana). J.C.-F. thanks the Spanish MCI for his FPI grant (No. BES-2006-12300) and J.H. acknowledges to the JAE program for the funds.Canet-Ferrer, J.; Muñoz Matutano, G.; Herranz, J.; Rivas, D.; Alén, B.; González, Y.; Fuster, D.... (2013). Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots. Applied Physics Letters. 103(18). https://doi.org/10.1063/1.4828352S1031

Thermal activated carrier transfer between InAs quantum dots in very low density samples

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Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy

Trabajo presentado a la 30th International Conference on the Physics of Semiconductors, celebrada en Seul (Korea) del 25 al 30 de Julio de 2010.The emission properties of lateral and vertical QD pairs grown on GaAs nanoholes are investigated. Vertical QD pairs with different size asymmetry have been fabricated controlling the bottom QD size independently of the areal density. The emission of individual pairs is dominated by spectral diffusion effects and charge instabilities induced by the local charge environment. Lateral QD pairs have been fabricated on GaAs nanoholes and studied as a function of an electric field applied in the growth plane.Peer Reviewe