Impact of gate-level clustering on automated system partitioning of 3D-ICs

When partitioning gate-level netlists using graphs, it is beneficial to cluster gates to reduce the order of the graph and preserve some characteristics of the circuit that the partitioning might degrade. Gate clustering is even more important for netlist partitioning targeting 3D system integration. In this paper, we make the argument that the choice of clustering method for 3D-ICs partitioning is not trivial and deserves careful consideration. To support our claim, we implemented three clustering methods that were used prior to partitioning two synthetic designs representing two extremes of the circuits medium/long interconnect diversity spectrum. Automatically partitioned netlists are then placed and routed in 3D to compare the impact of clustering methods on several metrics. From our experiments, we see that the clustering method indeed has a different impact depending on the design considered and that a circuit-blind, universal partitioning method is not the way to go, with wire-length savings of up to 31%, total power of up to 22%, and effective frequency of up to 15% compared to other methods. Furthermore, we highlight that 3D-ICs open new opportunities to design systems with a denser interconnect, drastically reducing the design utilization of circuits that would not be considered viable in 2D.Comment: 8 pages, 6 figure

On the Evaluation of SEEs on Open-Source Embedded Static RAMs

3Static RAM modules are widely adopted in high performance systems. Single Event Effects (SEEs) resilient memories are required in many embedded systems applied in automotive and aerospace applications to increase their overall resiliency against SEEs. The current SEE resilient SRAM modules are obtained by applying radiation-hardened by design solutions which leads to elevated area overhead and difficulty to tune the resiliency capability with respect to the particle’s radiation profile. To overcome these limitations, we propose a methodology for the analysis and mitigation of embedded SRAMs generated by the OpenRAM memory compiler. A technology-oriented radiation analysis tool is presented to support the interaction of the charged radiation particles with the SRAM layout and depict the sensitive transistors of the SRAM memory. A selective duplication of the sensitive transistors has been applied to the 6T-SRAM cell designed at the layout level. The designed cell is included in the OpenRAM compiler and used to generate a mitigated 8Kb SRAM-bank. We evaluated the SEEs sensitivity by comparative simulation-based radiation analysis observing a reduction more than 6 times with respect to the original 6T-SRAM cell for the SEE sensitivity at high energy heavy ions particles, with negligible degradation of operations margins and power consumption and area overhead of less than ̴4%.partially_openopenAzimi, Sarah; De Sio, Corrado; Sterpone, LucaAzimi, Sarah; De Sio, Corrado; Sterpone, Luc

Heterogeneous 2.5D integration on through silicon interposer

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity

Cross-Layer Pathfinding for Off-Chip Interconnects

Off-chip interconnects for integrated circuits (ICs) today induce a diverse design space, spanning many different applications that require transmission of data at various bandwidths, latencies and link lengths. Off-chip interconnect design solutions are also variously sensitive to system performance, power and cost metrics, while also having a strong impact on these metrics. The costs associated with off-chip interconnects include die area, package (PKG) and printed circuit board (PCB) area, technology and bill of materials (BOM). Choices made regarding off-chip interconnects are fundamental to product definition, architecture, design implementation and technology enablement. Given their cross-layer impact, it is imperative that a cross-layer approach be employed to architect and analyze off-chip interconnects up front, so that a top-down design flow can comprehend the cross-layer impacts and correctly assess the system performance, power and cost tradeoffs for off-chip interconnects. Chip architects are not exposed to all the tradeoffs at the physical and circuit implementation or technology layers, and often lack the tools to accurately assess off-chip interconnects. Furthermore, the collaterals needed for a detailed analysis are often lacking when the chip is architected; these include circuit design and layout, PKG and PCB layout, and physical floorplan and implementation. To address the need for a framework that enables architects to assess the system-level impact of off-chip interconnects, this thesis presents power-area-timing (PAT) models for off-chip interconnects, optimization and planning tools with the appropriate abstraction using these PAT models, and die/PKG/PCB co-design methods that help expose the off-chip interconnect cross-layer metrics to the die/PKG/PCB design flows. Together, these models, tools and methods enable cross-layer optimization that allows for a top-down definition and exploration of the design space and helps converge on the correct off-chip interconnect implementation and technology choice. The tools presented cover off-chip memory interfaces for mobile and server products, silicon photonic interfaces, 2.5D silicon interposers and 3D through-silicon vias (TSVs). The goal of the cross-layer framework is to assess the key metrics of the interconnect (such as timing, latency, active/idle/sleep power, and area/cost) at an appropriate level of abstraction by being able to do this across layers of the design flow. In additional to signal interconnect, this thesis also explores the need for such cross-layer pathfinding for power distribution networks (PDN), where the system-on-chip (SoC) floorplan and pinmap must be optimized before the collateral layouts for PDN analysis are ready. Altogether, the developed cross-layer pathfinding methodology for off-chip interconnects enables more rapid and thorough exploration of a vast design space of off-chip parallel and serial links, inter-die and inter-chiplet links and silicon photonics. Such exploration will pave the way for off-chip interconnect technology enablement that is optimized for system needs. The basis of the framework can be extended to cover other interconnect technology as well, since it fundamentally relates to system-level metrics that are common to all off-chip interconnects

Book of Knowledge (BOK) for NASA Electronic Packaging Roadmap

The objective of this document is to update the NASA roadmap on packaging technologies (initially released in 2007) and to present the current trends toward further reducing size and increasing functionality. Due to the breadth of work being performed in the area of microelectronics packaging, this report presents only a number of key packaging technologies detailed in three industry roadmaps for conventional microelectronics and a more recently introduced roadmap for organic and printed electronics applications. The topics for each category were down-selected by reviewing the 2012 reports of the International Technology Roadmap for Semiconductor (ITRS), the 2013 roadmap reports of the International Electronics Manufacturing Initiative (iNEMI), the 2013 roadmap of association connecting electronics industry (IPC), the Organic Printed Electronics Association (OE-A). The report also summarizes the results of numerous articles and websites specifically discussing the trends in microelectronics packaging technologies

MICROELECTRONICS PACKAGING TECHNOLOGY ROADMAPS, ASSEMBLY RELIABILITY, AND PROGNOSTICS

This paper reviews the industry roadmaps on commercial-off-the shelf (COTS) microelectronics packaging technologies covering the current trends toward further reducing size and increasing functionality. Due tothe breadth of work being performed in this field, this paper presents only a number of key packaging technologies. The topics for each category were down-selected by reviewing reports of industry roadmaps including the International Technology Roadmap for Semiconductor (ITRS) and by surveying publications of the International Electronics Manufacturing Initiative (iNEMI) and the roadmap of association connecting electronics industry (IPC). The paper also summarizes the findings of numerous articles and websites that allotted to the emerging and trends in microelectronics packaging technologies. A brief discussion was presented on packaging hierarchy from die to package and to system levels. Key elements of reliability for packaging assemblies were presented followed by reliabilty definition from a probablistic failure perspective. An example was present for showing conventional reliability approach using Monte Carlo simulation results for a number of plastic ball grid array (PBGA). The simulation results were compared to experimental thermal cycle test data. Prognostic health monitoring (PHM) methods, a growing field for microelectronics packaging technologies, were briefly discussed. The artificial neural network (ANN), a data-driven PHM, was discussed in details. Finally, it presented inter- and extra-polations using ANN simulation for thermal cycle test data of PBGA and ceramic BGA (CBGA) assemblies

Flexible stretchable electronics for sport and wellbeing applications

Wearable electronics are becoming increasingly widespread in modern society. Though these devices are intended to be worn, integrated into clothing and other everyday objects, the technologies and processes used to manufacture them is no different than those that manufacture laptops and mobile phones. Many of these devices are intended to monitor the user’s health, activity and general wellbeing, within clinical, recreational and assistive environments. Consequently, the inherent incompatibility of these rigid devices with the soft, elastic structure of the human body can in some cases can be uncomfortable and inconvenient for everyday life. For devices to take the step from a ‘wearable’ to an ‘invisible’, a drastic rethinking of electronics manufacturing is required.The fundamental aim of this research is to establish parameters of usefulness and an array of materials with complimentary processes that would assist in transitioning devices to long term almost invisible items that can assist in improving the health of the wearer. In order to approach this problem, a novel architecture was devised that utilised PDMS as a substrate and microfluid channels of Galinstan liquid alloy for interconnects. CO2 laser machining was investigated as a means of creating channels and vias on PDMS substrates. Trace speeds and laser power outputs were investigated in order to find an optimal combination. The results displayed upper limits for power densities; where surpassing this limit resulted in poor repeatability and surface finish. It was found that there was an optimal set of trace speeds that ranged from approximately 120mm/s to 190mm/s that resulted in the most reliable and repeatable performance. Due to the complex nature of a materials variable energy absorption properties, it is not possible to quantify a single optimal parameter set.To understand the performance of these devices in situ, finite element analysis was employed to model deformations that such a device could experience. The aims here were to investigate the bond strength required to prevent delamination, between the silicon-PDMS and PDMS-PDMS bonds, in addition to the stress applied to the silicone die during these deformations. Based upon the applied loads the required bond strengths would need to be at least ~65kPa to maintain PDMS-PDMS adhesion during these tests, while stress on the silicone-PDMS adhesion required an expected v higher ~160kPa, both of which are within the reach of existing bonding techniques that are capable of withstanding a pressure of ~600kPa before failure occurs. Stress on the silicon die did not exceed ~7.8 MPa during simulation, which is well below the fracture stress.By developing knowledge about how various components of such a system will respond during use and under stress, it allows future engineers to make informed design decisions and develop better more resilient products.</div

Through Silicon Via Field-Effect Transistor with Hafnia-based Ferroelectrics and the Doping of Silicon by Gallium Implantation Utilizing a Focused Ion Beam System

3-dimensional integration has become a standard to further increase the transistor density and to enhance the integrated functionality in microchips. Integrated circuits are stacked on top of each other and copper-filled through-silicon VIAs (TSVs) are the industry-accepted choice for their vertical electrical connection. The aim of this work is to functionalize the TSVs by implementing vertical field-effect transistors inside the via holes. The front and back sides of 200 ... 300 µm thin silicon wafers were doped to create the source/drain regions of n- and p-FETs. The TSVFETs showed very stable saturation currents and on/off current ratios of about 10^6 (n-TSVFET) and 10^3 (p-TSVFET) for a gate voltage magnitude of 4V. The use of hafnium zirconium oxide on a thin SiO_2 interface layer as gate dielectric material in a p-TSVFET, enabled the implementation of a charge trapping memory inside the TSVs, showing a memory window of about 1V. This allows the non-volatile storage of the transistor on/off state. In addition, the demonstration of the use of gallium as the source/drain dopant in planar p-FET test structures (ion implanted from a focused ion beam tool) paves the way for maskless doping and for a process flow with a low thermal budget. It was shown, that ion implanted gallium can be activated and annealed at relatively low temperatures of 500 °C ... 700 °C.:Abstract / Kurzzusammenfassung Danksagung Index I List of Figures III List of Tables X List of Symbols XI List of Abbreviations XV 1 Introduction 1 2 Fundamentals 5 2.1 Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) 5 2.1.1 Historical Development - Technological Advancements 7 2.1.2 Field-Effect Transistors in Semiconductor Memories 10 2.2 3D Integration and the Use of TSVs (Through Silicon VIAs) 16 2.3 Doping of Silicon 19 2.3.1 Doping by Thermal Diffusion 20 2.3.2 Doping by Ion Implantation 22 3 Electrical Characterization 24 3.1 Resistivity Measurements 24 3.1.1 Resistance Determination by Four-Point Probes Measurement 24 3.1.2 Contact Resistivity 27 3.1.3 Doping Concentration 32 3.2 C-V Measurements 35 3.2.1 Fundamentals of MIS C-V Measurements 35 3.2.2 Interpretation of C-V Measurements 37 3.3 Transistor Measurements 41 3.3.1 Output Characteristics (I_D-V_D) 41 3.3.2 Transfer Characteristics (I_D-V_G) 42 4 TSV Transistor 45 4.1 Idea and Motivation 45 4.2 Design and Layout of the TSV Transistor 47 4.2.1 Design of the TSV Transistor Structures 47 4.2.2 Test Structures for Planar FETs 48 5 Variations in the Integration Scheme of the TSV Transistor 51 5.1 Doping by Diffusion from Thin Films 51 5.1.1 Determination of Doping Profiles 52 5.1.2 n- and p- TSVFETs Doped Manufactures by the Use of the Diffusion Technique 59 5.2 Ferroelectric Hafnium-Zirconium-Oxide (HZO) in the Gate Stack 81 5.2.1 Planar ferroelectric p-MOSFETs Doped by Thermal Diffusion 82 5.2.2 p-TSVFETs with Hafnium-Zirconium-Oxide Metal Gate 90 5.3 Doping by Ion Implantation of Gallium with a Focused Ion Beam (FIB) Tool 96 5.3.1 Ga doped Si Diodes 97 5.3.2 Planar p-MOSFETs Doped by Ga Implantation 108 5.3.3 Proposal for a parallel integration of Cu TSVs and p-TSVFETs 117 6 Summary and Outlook 120 Bibliography XVIII A Appendix XXXVI A.1 Resistivity and Dopant Density XXXVI A.2 Mask set for the TSVFET XXXVII A.3 Mask Design of the Planar Test Structures XXXVIII Curriculum Vitae XXXIX List of Scientific Publications XL

Panel: Looking Backwards and Forwards

Ten years ago, at 90 nanometers, EDA was challenged and deemed inadequate in dealing with increasing complexity, power consumption, and sub-wavelength lithography, thus harming the progress of mobile phones. Today, at 10 nanometers, integration capacity has increased by two orders of magnitude, power consumption has been successfully "tamed", and 193 nanometer immersion lithography is still relied upon. Also thanks to EDA, tools, methodologies, and flows that were originally devised for design enablement for the emerging technology nodes, have been successfully redeployed at the established technology nodes, where they represent a critical design differentiation factor. However, the battleground is changing again: after the billions of phones, trillions of "things" lie ahead. Moving forward, emerging and established technology nodes, digital and analog, hardware and software will be equally critical. What is EDA doing and, more important, what should EDA do - and is not doing - in order for the next decade to be as great as the past one? This panel session, moderated by EPFL Professor Giovanni De Micheli, gathers academia, semiconductor, and EDA industry to discuss the challenges and requirements of the new era

Manufacturing of three dimensional integrated circuits

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2007.Includes bibliographical references (p. 221-231).Along with scaling down in size, novel materials have been introduced into the semiconductor industry to enable continued improvements in performance and cost as predicted by Moore's law. It has become important now more than ever to include an environmental impact evaluation of future technologies, before they are introduced into manufacturing, in order to identify potentially environmentally harmful materials or processes and understand their implications, costs, and mitigation requirements. In this thesis, we introduce a methodology to compare alternative options on the environmental axis, along with the cost and performance axes, in order to create environmentally aware and benign technologies. This methodology also helps to identify potential performance and cost issues in novel technologies by taking a transparent and bottoms-up assessment approach. This methodology is applied to the evaluation of the MIT 3D IC technology in comparison to a standard CMOS 2D IC approach. Both options are compared on all three axes - performance, cost and environmental impact.(cont.) The "handle wafer" unit process in the existing 3D IC technology, which is a crucial process for back-to-face integration, is found to have a large environmental impact because of its use of thick metal sacrificial layers and high energy consumption. We explore three different handle wafer options, between-die channel, oxide release layer, and alternative low-temperature permanent bonding. The first two approaches use a chemical handle wafer release mechanism; while the third explores solid liquid inter-diffusion (SLID) bonding using copper-indium at 2000C. Preliminary results for copper-indium bonding indicate that a sub-micron thick multi-layer copper-indium stack, when bonded to a 300 nm thick copper film results in large voids in the bonding interface primarily due to rough as-deposited films. Finally, we conduct an overall assessment of these and other proposed handle wafer technologies. The overall assessment shows that but the oxide release layer approach appears promising; however, each process option has its strength and weaknesses, which need to be understood and pursued accordingly.by Ajay Somani.Ph.D