Efficient Hybrid Continuous-Time/Discrete-Time Cascade Modulators for Wideband Applications

This paper analyses the use of hybrid continuous-time/discrete-time cascade ΣΔ modulators for the implementation of power-efficient analog-to-digital converters in broadband wireless communication systems. Two alternative implementations of multi-rate cascade architectures are studied and compared with conventional single-rate continuous-time topologies, taking into account the impact of main circuit-level error mechanisms, namely: mismatch, finite dc gain and gain-bandwidth product. In all cases, closed-form design equations are derived for the nonideal in-band noise power of all ΣΔ modulators under study, providing analytical relationships between their system-level performance and the corresponding circuit-level error parameters. Theoretical predictions match simulation results, showing that the lowest performance degradation is obtained by a new kind of multi-rate hybrid ΣΔ modulator, in which the front-end (continuous-time) stage operates at a higher rate than the back-end (discrete-time) stages. As a case study, the design of a hybrid GmC/switched-capacitor fourth-order (two-stage, 4-bit) cascade ΣΔ modulator is discussed to illustrate the potential benefits of the presented approachMinisterio de Economía y Competitividad TEC2010-14825/MI

Design of sigma-delta modulators for analog-to-digital conversion intensively using passive circuits

This thesis presents the analysis, design implementation and experimental evaluation of passiveactive discrete-time and continuous-time Sigma-Delta (ΣΔ) modulators (ΣΔMs) analog-todigital converters (ADCs). Two prototype circuits were manufactured. The first one, a discrete-time 2nd-order ΣΔM, was designed in a 130 nm CMOS technology. This prototype confirmed the validity of the ultra incomplete settling (UIS) concept used for implementing the passive integrators. This circuit, clocked at 100 MHz and consuming 298 μW, achieves DR/SNR/SNDR of 78.2/73.9/72.8 dB, respectively, for a signal bandwidth of 300 kHz. This results in a Walden FoMW of 139.3 fJ/conv.-step and Schreier FoMS of 168 dB. The final prototype circuit is a highly area and power efficient ΣΔM using a combination of a cascaded topology, a continuous-time RC loop filter and switched-capacitor feedback paths. The modulator requires only two low gain stages that are based on differential pairs. A systematic design methodology based on genetic algorithm, was used, which allowed decreasing the circuit’s sensitivity to the circuit components’ variations. This continuous-time, 2-1 MASH ΣΔM has been designed in a 65 nm CMOS technology and it occupies an area of just 0.027 mm2. Measurement results show that this modulator achieves a peak SNR/SNDR of 76/72.2 dB and DR of 77dB for an input signal bandwidth of 10 MHz, while dissipating 1.57 mW from a 1 V power supply voltage. The ΣΔM achieves a Walden FoMW of 23.6 fJ/level and a Schreier FoMS of 175 dB. The innovations proposed in this circuit result, both, in the reduction of the power consumption and of the chip size. To the best of the author’s knowledge the circuit achieves the lowest Walden FOMW for ΣΔMs operating at signal bandwidth from 5 MHz to 50 MHz reported to date

A Low Power Sigma-Delta Modulator with Hybrid Architecture

Analogue-to-digital converters (ADC) using oversampling technology and Σ-∆ modulation mechanism are widely applied in digital audio systems. This paper presents an audio modulator with high accuracy and low power consumption by using discrete second-order feedforward structure. A 5-bit SAR (Successive-approximation-register) quantizer is integrated into the chip, which reduces the number of comparators and the power consumption of the quantizer compared with Flash ADC type quantizers. An analogue passive adder is used to sum the input signals and it is embedded in a SAR ADC composed of capacitor array and a dynamic comparator which has no static power consumption. To validate the design concept, the designed modulator is developed in a 180 nm CMOS process. The peak SNDR (signal to noise distortion ratio) is calculated as 106 dB and the total power consumption of the chip is recorded as 3.654 mW at the chip supply voltage of 1.8 V. The input sine wave of 0 to 25 kHz is sampled at a sampling frequency of 3.2 Ms/s. Moreover, the results achieve 16-bit ENOB (effective number of bits) when the amplitude of the input signal is varied between 0.15 V to 1.65 V. By comparing with other modulators which were realized by 180nm CMOS process, the proposed architecture outperforms with lower power consumption

Architectural Alternatives to Implement High-Performance Delta-Sigma Modulators

RÉSUMÉ Le besoin d’appareils portatifs, de téléphones intelligents et de systèmes microélectroniques implantables médicaux s’accroît remarquablement. Cependant, l’optimisation de l’alimentation de tous ces appareils électroniques portables est l’un des principaux défis en raison du manque de piles à grande capacité utilisées pour les alimenter. C’est un fait bien établi que le convertisseur analogique-numérique (CAN) est l’un des blocs les plus critiques de ces appareils et qu’il doit convertir efficacement les signaux analogiques au monde numérique pour effectuer un post-traitement tel que l’extraction de caractéristiques. Parmi les différents types de CAN, les modulateurs Delta Sigma (��M) ont été utilisés dans ces appareils en raison des fonctionnalités alléchantes qu’ils offrent. En raison du suréchantillonnage et pour éloigner le bruit de la bande d’intérêt, un CAN haute résolution peut être obtenu avec les architectures ��. Il offre également un compromis entre la fréquence d’échantillonnage et la résolution, tout en offrant une architecture programmable pour réaliser un CAN flexible. Ces CAN peuvent être implémentés avec des blocs analogiques de faible précision. De plus, ils peuvent être efficacement optimisés au niveau de l’architecture et circuits correspondants. Cette dernière caractéristique a été une motivation pour proposer différentes architectures au fil des ans. Cette thèse contribue à ce sujet en explorant de nouvelles architectures pour optimiser la structure ��M en termes de résolution, de consommation d’énergie et de surface de silicium. Des soucis particuliers doivent également être pris en compte pour faciliter la mise en œuvre du ��M. D’autre part, les nouveaux procédés CMOS de conception et fabrication apportent des améliorations remarquables en termes de vitesse, de taille et de consommation d’énergie lors de la mise en œuvre de circuits numériques. Une telle mise à l’échelle agressive des procédés, rend la conception de blocs analogiques tel que un amplificateur de transconductance opérationnel (OTA), difficile. Par conséquent, des soins spéciaux sont également pris en compte dans cette thèse pour surmonter les problèmes énumérés. Ayant mentionné ci-dessus que cette thèse est principalement composée de deux parties principales. La première concerne les nouvelles architectures implémentées en mode de tension et la seconde partie contient une nouvelle architecture réalisée en mode hybride tension et temps.----------ABSTRACT The need for hand-held devices, smart-phones and medical implantable microelectronic sys-tems, is remarkably growing up. However, keeping all these electronic devices power optimized is one of the main challenges due to the lack of long life-time batteries utilized to power them up. It is a well-established fact that analog-to-digital converter (ADC) is one of the most critical building blocks of such devices and it needs to efficiently convert analog signals to the digital world to perform post processing such as channelizing, feature extraction, etc. Among various type of ADCs, Delta Sigma Modulators (��Ms) have been widely used in those devices due to the tempting features they offer. In fact, due to oversampling and noise-shaping technique a high-resolution ADC can be achieved with �� architectures. It also offers a compromise between sampling frequency and resolution while providing a highly-programmable approach to realize an ADC. Moreover, such ADCs can be implemented with low-precision analog blocks. Last but not the least, they are capable of being effectively power optimized at both architectural and circuit levels. The latter has been a motivation to proposed different architectures over the years.This thesis contributes to this topic by exploring new architectures to effectively optimize the ��M structure in terms of resolution, power consumption and chip area. Special cares must also be taken into account to ease the implementation of the ��M. On the other hand, advanced node CMOS processes bring remarkable improvements in terms of speed, size and power consumption while implementing digital circuits. Such an aggressive process scaling, however, make the design of analog blocks, e.g. operational transconductance amplifiers (OTAs), cumbersome. Therefore, special cares are also taken into account in this thesis to overcome the mentioned issues. Having had above mentioned discussion, this thesis is mainly split in two main categories. First category addresses new architectures implemented in a pure voltage domain and the second category contains new architecture realized in a hybrid voltage and time domain. In doing so, the thesis first focuses on a switched-capacitor implementation of a ��M while presenting an architectural solution to overcome the limitations of the previous approaches. This limitations include a power hungry adder in a conventional feed-forward topology as well as power hungry OTAs

Low-voltage low-power continuous-time delta-sigma modulator designs

Ph.DDOCTOR OF PHILOSOPH

Linearization of Time-encoded ADCs Architectures for Smart MEMS Sensors in Low Power CMOS Technology

Mención Internacional en el título de doctorIn the last few years, the development of mobile technologies and machine learning applications has increased the demand of MEMS-based digital microphones. Mobile devices have several microphones enabling noise canceling, acoustic beamforming and speech recognition. With the development of machine learning applications the interest to integrate sensors with neural networks has increased. This has driven the interest to develop digital microphones in nanometer CMOS nodes where the microphone analog-front end and digital processing, potentially including neural networks, is integrated on the same chip. Traditionally, analog-to-digital converters (ADCs) in digital microphones have been implemented using high order Sigma-Delta modulators. The most common technique to implement these high order Sigma-Selta modulators is switchedcapacitor CMOS circuits. Recently, to reduce power consumption and make them more suitable for tasks that require always-on operation, such as keyword recognition, switched-capacitor circuits have been improved using inverter-based operational amplifier integrators. Alternatively, switched-capacitor based Sigma- Delta modulators have been replaced by continuous time Sigma-Delta converters. Nevertheless, in both implementations the input signal is voltage encoded across the modulator, making the integration in smaller CMOS nodes more challenging due to the reduced voltage supply. An alternative technique consists on encoding the input signal on time (or frequency) instead of voltage. This is what time-encoded converters do. Lately, time-encoding converters have gained popularity as they are more suitable to nanometer CMOS nodes than Sigma-Delta converters. Among the ones that have drawn more interest we find voltage-controlled oscillator based ADCs (VCOADCs). VCO-ADCs can be implemented using CMOS inverter based ring oscillators (RO) and digital circuitry. They also show noise-shaping properties. This makes them a very interesting alternative for implementation of ADCs in nanometer CMOS nodes. Nevertheless, two main circuit impairments are present in VCO-ADCs, and both come from the oscillator non-idealities. The first of them is the oscillator phase noise, that reduces the resolution of the ADC. The second is the non-linear tuning curve of the oscillator, that results in harmonic distortion at medium to high input amplitudes. In this thesis we analyze the use of time encoding ADCs for MEMS microphones with special focus on ring oscillator based ADCs (RO-ADCs). Firstly, we study the use of a dual-slope based SAR noise shaped quantizer (SAR-NSQ) in sigma-delta loops. This quantizer adds and extra level of noise-shaping to the modulator, improving the resolution. The quantizer is explained, and equations for the noise transfer function (NTF) of a third order sigma-delta using a second order filter and the NSQ are presented. Secondly, we move our attention to the topic of RO-ADCs. We present a high dynamic range MEMS microphone 130nm CMOS chip based on an open-loop VCO-ADC. This dissertation shows the implementation of the analog front-end that includes the oscillator and the MEMS interface, with a focus on achieving low power consumption with low noise and a high dynamic range. The digital circuitry is left to be explained by the coauthor of the chip in his dissertation. The chip achieves a 80dBA peak SNDR and 108dB dynamic range with a THD of 1.5% at 128 dBSPL with a power consumption of 438μW. After that, we analyze the use of a frequency-dependent-resistor (FDR) to implement an unsampled feedback loop around the oscillator. The objective is to reduce distortion. Additionally phase noise mitigation is achieved. A first topology including an operational amplifier to increase the loop gain is analyzed. The design is silicon proven in a 130 nm CMOS chip that achieves a 84 dBA peak SNDR with an analog power consumption of 600μW. A second topology without the operational amplifier is also analyzed. Two chips are designed with this topology. The first chip in 130 nm CMOS is a full VCO-ADC including the frequencyto- digital converter (F2D). This chip achieves a peak SNDR of 76.6 dBA with a power consumption of 482μW. The second chip includes only the oscillator and is implemented in 55nm CMOS. The peak SNDR is 78.15 dBA and the analog power consumption is 153μW. To finish this thesis, two circuits that use an FDR with a ring oscillator are presented. The first is a capacity-to-digital converter (CDC). The second is a filter made with an FDR and an oscillator intended for voice activity detection tasks (VAD).En los últimos años, el desarrollo de las tecnologías móviles y las aplicaciones de machine-learning han aumentado la demanda de micrófonos digitales basados en MEMS. Los dipositivos móviles tienen varios micrófonos que permiten la cancelación de ruido, el beamforming o conformación de haces y el reconocimiento de voz. Con el desarrollo de aplicaciones de aprendizaje automático, el interés por integrar sensores con redes neuronales ha aumentado. Esto ha impulsado el interés por desarrollar micrófonos digitales en nodos CMOS nanométricos donde el front-end analógico y el procesamiento digital del micrófono, que puede incluir redes neuronales, está integrado en el mismo chip. Tradicionalmente, los convertidores analógicos-digitales (ADC) en micrófonos digitales han sido implementados utilizando moduladores Sigma-Delta de orden elevado. La técnica más común para implementar estos moduladores Sigma- Delta es el uso de circuitos CMOS de capacidades conmutadas. Recientemente, para reducir el consumo de potencia y hacerlos más adecuados para las tareas que requieren una operación continua, como el reconocimiento de palabras clave, los convertidores Sigma-Delta de capacidades conmutadas has sido mejorados con el uso de integradores implementados con amplificadores operacionales basados en inversores CMOS. Alternativamente, los Sigma-Delta de capacidades conmutadas han sido reemplazados por moduladores en tiempo continuo. No obstante, en ambas implementaciones, la señal de entrada es codificada en voltaje durante el proceso de conversión, lo que hace que la integración en nodos CMOS más pequeños sea complicada debido a la menor tensión de alimentación. Una técnica alternativa consiste en codificar la señal de entrada en tiempo (o frecuencia) en lugar de tensión. Esto es lo que hacen los convertidores de codificación temporal. Recientemente, los convertidores de codificación temporal han ganado popularidad ya que son más adecuados para nodos CMOS nanométricos que los convertidores Sigma-Delta. Entre los que más interés han despertado encontramos los ADCs basados en osciladores controlados por tensión (VCO-ADC). Los VCO-ADC se pueden implementar usando osciladores en anillo (RO) implementados con inversores CMOS y circuitos digitales. Esta familia de convertidores también tiene conformado de ruido. Esto los convierte en una alternativa muy interesante para la implementación de convertidores en nodos CMOS nanométricos. Sin embargo, dos problemas principales están presentes en este tipo de ADCs debidos ambos a las no idealidades del oscilador. El primero de los problemas es la presencia de ruido de fase en el oscilador, lo que reduce la resolución del ADC. El segundo es la curva de conversion voltaje-frecuencia no lineal del oscilador, lo que causa distorsión a amplitudes medias y altas. En esta tesis analizamos el uso de ADCs de codificación temporal para micrófonos MEMS, con especial interés en ADCS basados en osciladores de anillo (RO-ADC). En primer lugar, estudiamos el uso de un cuantificador SAR con conformado de ruido (SAR-NSQ) en moduladores Sigma-Delta. Este cuantificador agrega un orden adicional de conformado de ruido al modulador, mejorando la resolución. En este documento se explica el cuantificador y obtienen las ecuaciones para la función de transferencia de ruido (NTF) de un sigma-delta de tercer orden usando un filtro de segundo orden y el NSQ. En segundo lugar, dirigimos nuestra atención al tema de los RO-ADC. Presentamos el chip de un micrófono MEMS de alto rango dinámico en CMOS de 130 nm basado en un VCO-ADC de bucle abierto. En esta tesis se explica la implementación del front-end analógico que incluye el oscilador y la interfaz con el MEMS. Esta implementación se ha llevado a cabo con el objetivo de lograr un bajo consumo de potencia, un bajo nivel de ruido y un alto rango dinámico. La descripción del back-end digital se deja para la tesis del couator del chip. La SNDR de pico del chip es de 80dBA y el rango dinámico de 108dB con una THD de 1,5% a 128 dBSPL y un consumo de potencia de 438μW. Finalmente, se analiza el uso de una resistencia dependiente de frecuencia (FDR) para implementar un bucle de realimentación no muestreado alrededor del oscilador. El objetivo es reducir la distorsión. Además, también se logra la mitigación del ruido de fase del oscilador. Se analyza una primera topologia de realimentación incluyendo un amplificador operacional para incrementar la ganancia de bucle. Este diseño se prueba en silicio en un chip CMOS de 130nm que logra un pico de SNDR de 84 dBA con un consumo de potencia de 600μW en la parte analógica. Seguidamente, se analiza una segunda topología sin el amplificador operacional. Se fabrican y miden dos chips diseñados con esta topologia. El primero de ellos en CMOS de 130 nm es un VCO-ADC completo que incluye el convertidor de frecuencia a digital (F2D). Este chip alcanza un pico SNDR de 76,6 dBA con un consumo de potencia de 482μW. El segundo incluye solo el oscilador y está implementado en CMOS de 55nm. El pico SNDR es 78.15 dBA y el el consumo de potencia analógica es de 153μW. Para cerrar esta tesis, se presentan dos circuitos que usan la FDR con un oscilador en anillo. El primero es un convertidor de capacidad a digital (CDC). El segundo es un filtro realizado con una FDR y un oscilador, enfocado a tareas de detección de voz (VAD).Programa de Doctorado en Ingeniería Eléctrica, Electrónica y Automática por la Universidad Carlos III de MadridPresidente: Antonio Jesús Torralba Silgado.- Secretaria: María Luisa López Vallejo.- Vocal: Pieter Rombout

Wide-bandwidth, high-resolution delta-sigma analog-to-digital converters

There is a significant need in recent mobile communication and wireless broadband systems for high-performance analog-to-digital converters (ADCs) that have wide bandwidth (BW>5-MHz) and high data rate (>100-Mbps). A delta-sigma ADC is recognized as a power-efficient ADC architecture when high resolution (>12-b) is required. This is due to several advantages of the delta-sigma ADC including relaxed anti-aliasing filter requirements, high signal-to-noise and distortion ratio (SNDR) and most importantly, reduced sensitivity to analog imperfections. In this thesis, several structures and design techniques are developed for the implementation of continuoustime (CT) and discrete-time (DT) delta-sigma ADCs. These techniques save the total power consumption, reduce the design complexity, and decrease the chip die area of delta-sigma modulators. First a 4th-order single stage CT delta-sigma ADC with a novel single-amplifier-biquad (SAB) based loop filter is presented. By utilizing the SAB networks in the loop filter of an Nth-order CT delta-sigma modulator, it requires only half the number of active amplifiers and feed-forward branches used in the conventional modulator architecture, thus decreasing the power consumption and area by reducing the number of amplifiers. The proposed scheme also enables the modulator to use a switch-capacitor (SC) adder due to the reduced number of feedforward branches to its summing block. As a sequence, it consumes less power compared to a conventional CT adder. With a 130-nm CMOS technology, the fabricated prototype IC achieves a dynamic range of 80 dB with 10 MHz signal bandwidth and analog power dissipation lower than 12 mW. Presented as the second scheme to save power consumption and chip die area in ΔΣ modulators is a new stage-sharing technique in a discrete-time 2-2 MASH ΔΣ ADC. The proposed technique shares all the active blocks of the modulator second stage with its first stage during the two non-overlapping clock phases. Measurement results show that the modulator designed in a 0.13-um CMOS technology achieves 76 dB SNDR over a 10 MHz conversion bandwidth dissipating less than 9 mW analog power

Contribution to time domain readout circuits design for multi-standard sensing system for low voltage supply and high-resolution applications

Mención Internacional en el título de doctorThis research activity has the purpose of open new possibilities in the design of capacitance-to-digital converters (CDCs) by developing a solution based on time domain conversion. This can be applied to applications related with the Internet-of-Things (IoT). These applications are present in any electronic devices where sensing is needed. To be able to reduce the area of the whole system with the required performance, micro-electromechanical systems (MEMS) sensors are used in these applications. We propose a new family of sensor readout electronics to be integrated with MEMS sensors. Within the time domain converters, Dual Slope (DS) topology is very interesting to explore a new compromise between performances, area and power consumption. DS topology has been extensively used in instrumentation. The simplicity and robustness of the blocks inside classical DS converters it is the main advantage. However, they are not efficient for applications where higher bandwidth is required. To extend the bandwidth, DS converters have been introduced into ΔΣ loops. This topology has been named as integrating converters. They increase the bandwidth compare to classical DS architecture but at the expense of higher complexity. In this work we propose the use of a new family of DS converters that keep the advantages of the classical architecture and introduce noise shaping. This way the bandwidth is increased without extra blocks. The Self-Compensated noise-shaped DS converter (the name given to the new topology) keeps the signal transfer function (STF) and the noise transfer function (NTF) of Integrating converters. However, we introduce a new arrangement in the core of the converter to do noise shaping without extra circuitry. This way the simplicity of the architecture is preserved. We propose to use the Self-Compensated DS converter as a CDC for MEMS sensors. This work makes a study of the best possible integration of the two blocks to keep the signal integrity considering the electromechanical behavior of the sensor. The purpose of this front-end is to be connected to any kind of capacitive MEMS sensor. However, to prove the concepts developed in this thesis the architecture has been connected to a pressure MEMS sensor. An experimental prototype was implemented in 130-nm CMOS process using the architecture mentioned before. A peak SNR of 103.9 dB (equivalent to 1Pa) has been achieved within a time measurement of 20 ms. The final prototype has a power consumption of 220 μW with an effective area of 0.317 mm2. The designed architecture shows good performance having competitive numbers against high resolution topologies in amplitude domain.Esta actividad de investigación tiene el propósito de explorar nuevas posibilidades en el diseño de convertidores de capacitancia a digital (CDC) mediante el desarrollo de una solución basada en la conversión en el dominio del tiempo. Estos convertidores se pueden utilizar en aplicaciones relacionadas con el mercado del Internet-de-las-cosas (IoT). Hoy en día, estas aplicaciones están presentes en cualquier dispositivo electrónico donde se necesite sensar una magnitud. Para poder reducir el área de todo el sistema con el rendimiento requerido, se utilizan sensores de sistemas micro-electromecánicos (MEMS) en estas aplicaciones. Proponemos una nueva familia de electrónica de acondicionamiento para integrar con sensores MEMS. Dentro de los convertidores de dominio de tiempo, la topología del doble-rampa (DS) es muy interesante para explorar un nuevo compromiso entre rendimiento, área y consumo de energía. La topología de DS se ha usado ampliamente en instrumentación. La simplicidad y la solidez de los bloques dentro de los convertidores DS clásicos es la principal ventaja. Sin embargo, no son eficientes para aplicaciones donde se requiere mayor ancho de banda. Para ampliar el ancho de banda, los convertidores DS se han introducido en bucles ΔΣ. Esta topología ha sido nombrada como Integrating converters. Esta topología aumenta el ancho de banda en comparación con la arquitectura clásica de DS, pero a expensas de una mayor complejidad. En este trabajo, proponemos el uso de una nueva familia de convertidores DS que mantienen las ventajas de la arquitectura clásica e introducen la configuración del ruido. De esta forma, el ancho de banda aumenta sin bloques adicionales. El convertidor Self-Compensated noise-shaped DS (el nombre dado a la nueva topología) mantiene la función de transferencia de señal (STF) y la función de transferencia de ruido (NTF) de los Integrating converters. Sin embargo, presentamos una nueva topología en el núcleo del convertidor para conformar el ruido sin circuitos adicionales. De esta manera, se preserva la simplicidad de la arquitectura. Proponemos utilizar el Self-Compensated noise-shaped DS como un CDC para sensores MEMS. Este trabajo hace un estudio de la mejor integración posible de los dos bloques para mantener la integridad de la señal considerando el comportamiento electromecánico del sensor. El propósito de este circuito de acondicionamiento es conectarse a cualquier tipo de sensor MEMS capacitivo. Sin embargo, para demostrar los conceptos desarrollados en esta tesis, la arquitectura se ha conectado a un sensor MEMS de presión. Se ha implementado dos prototipos experimentales en un proceso CMOS de 130-nm utilizando la arquitectura mencionada anteriormente. Se ha logrado una relación señal-ruido máxima de 103.9 dB (equivalente a 1 Pa) con un tiempo de medida de 20 ms. El prototipo final tiene un consumo de energía de 220 μW con un área efectiva de 0.317 mm2. La arquitectura diseñada muestra un buen rendimiento comparable con las arquitecturas en el dominio de la amplitud que muestran resoluciones equivalentes.Programa Oficial de Doctorado en Ingeniería Eléctrica, Electrónica y AutomáticaPresidente: Pieter Rombouts.- Secretario: Alberto Rodríguez Pérez.- Vocal: Dietmar Strãußnig

Interface Circuits for Microsensor Integrated Systems

ca. 200 words; this text will present the book in all promotional forms (e.g. flyers). Please describe the book in straightforward and consumer-friendly terms. [Recent advances in sensing technologies, especially those for Microsensor Integrated Systems, have led to several new commercial applications. Among these, low voltage and low power circuit architectures have gained growing attention, being suitable for portable long battery life devices. The aim is to improve the performances of actual interface circuits and systems, both in terms of voltage mode and current mode, in order to overcome the potential problems due to technology scaling and different technology integrations. Related problems, especially those concerning parasitics, lead to a severe interface design attention, especially concerning the analog front-end and novel and smart architecture must be explored and tested, both at simulation and prototype level. Moreover, the growing demand for autonomous systems gets even harder the interface design due to the need of energy-aware cost-effective circuit interfaces integrating, where possible, energy harvesting solutions. The objective of this Special Issue is to explore the potential solutions to overcome actual limitations in sensor interface circuits and systems, especially those for low voltage and low power Microsensor Integrated Systems. The present Special Issue aims to present and highlight the advances and the latest novel and emergent results on this topic, showing best practices, implementations and applications. The Guest Editors invite to submit original research contributions dealing with sensor interfacing related to this specific topic. Additionally, application oriented and review papers are encouraged.