Study of the discharge gas trapping during thin film growth

Discharge gas trapping in thin films produced by sputtering is known to be due to high energy neutrals bouncing back from the cathode. Qualitatively, the phenomenon is enhanced by raising the discharge voltage and is strongly dependent on the atomic masses of the discharge gas and of the cathode material. In addition to these known effects it is shown that, for a given gas, the trapped amount decreases with increasing the melting temperature of the deposited material. The results obtained both by sample melting and laser ablation are presented and discussed

Particulate Fillers in Thermoplastics

The characteristics of particulate filled thermoplastics are determined by four factors: component properties, composition, structure and interfacial interactions. The most important filler characteristics are particle size, size distribution, specific surface area and particle shape, while the main matrix property is stiffness. Segregation, aggregation and the orientation of anisotropic particles determine structure. Interfacial interactions lead to the formation of a stiff interphase considerably influencing properties. Interactions are changed by surface modification, which must be always system specific and selected according to its goal. Under the effect of external load inhomogeneous stress distribution develops around heterogeneities, which initiate local micromechanical deformation processes determining the macroscopic properties of the composites

Preparation and characterization of ³³S samples for ³³S(n,α)³⁰Si cross-section measurements at the n_TOF facility at CERN

Thin 33S samples for the study of the 33S(n,α)30Si cross-section at the n_TOF facility at CERN were made by thermal evaporation of 33S powder onto a dedicated substrate made of kapton covered with thin layers of copper, chromium and titanium. This method has provided for the first time bare sulfur samples a few centimeters in diameter. The samples have shown an excellent adherence with no mass loss after few years and no sublimation in vacuum at room temperature. The determination of the mass thickness of 33S has been performed by means of Rutherford backscattering spectrometry. The samples have been successfully tested under neutron irradiation

CVD DIAMOND GROWTH MECHANISMS AS IDENTIFIED BY SURFACE-TOPOGRAPHY

Contains fulltext : 112522.pdf (publisher's version ) (Open Access

Development of Nb3_3Sn coatings by magnetron sputtering for SRF cavities

Cost and energy savings are an integral requirement in the design of future particle accelerators. Very low losses SRF accelerating systems, together with high-efficiency cryogenics systems, have the potential of low running costs. The association to the capital cost reduction allowed by thin films coated copper cavities may represent the best overall cost-performance compromise. This strategy has been applied for instance in LEP, the LHC and HIE-ISOLDE with the niobium thin films technology. New materials must be considered to improve the quality factor of the cavities, such as Nb$_{3}$Sn, which could also ideally operate at higher temperature thus allowing further energy savings. The study considers the possibility to coat a copper resonator with an Nb$_{3}$Sn layer by means of magnetron sputtering using an alloyed target. We present the impact of the process parameters on the as-deposited layer stoichiometry. The latter is in good agreement with previous results reported in the literature and can be tuned by acting on the coating pressure. The effect of post-coating annealing temperature on the morphology, crystallinity and superconducting properties of the film was also investigated

Study of the discharge gas trapping during thin film growth

New data on the amount of sputter gas implanted in thin films are presented, complementing the results reported in the note CERN-EST-99-005-SM, published in Vacuum, Vol. 60, 1-2 (2001) Pp. 89-94. A detailed study has been performed for Ti, Zr, and V and for TiZr and TiVZr alloys