Ultra-low-cost near-infrared photodetectors on silicon

We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that form Schottky contact with Silicon. NIR photons excite plasmon resonances at metal nanoislands and plasmons decay into highly energetic charge carriers (hot electrons). These hot electrons get injected into Silicon (internal photoemission), resulting in photocurrent. Several groups have studied plasmonic nanoantennas using high resolution lithography techniques. In this work, we make use of randomly formed nanoislands for broad-band photoresponse at NIR wavelengths. We observe photoresponse up to 2000 nm wavelength with low dark current density about 50 pA/μm2. The devices exhibit photoresponsivity values as high as 2 mA/W and 600 μA/W at 1.3 μm and 1.55 μm wavelengths, respectively. Thin metal layer was deposited on low-doped n-type Silicon wafer. Rapid thermal annealing results in surface reconstruction of the metal layer into nanoislands. Annealing conditions control the average size of the nanoislands and photoresponse of the devices. An Al-doped Zinc Oxide (AZO) layer was deposited on the nanoislands using thermal atomic layer deposition (ALD) technique to acts as a transparent conductive oxide (TCO) and patterned using photolithography. AZO film creates electrical connection between the nanoislands and also makes a heterojunction to Silicon. Simple and scalable fabrication on Si substrates without the need for any sub-micron lithography or high temperature epitaxy process make these devices good candidates for ultra-low-cost broad-band NIR imaging and spectroscopy applications. © 2015 SPIE

Charge trapping memory with 2.85-nm Si-nanoparticles embedded in HfO<inf>2</inf>

In this work, the effect of embedding 2.85-nm Si-nanoparticles charge trapping layer in between double layers of high-κ Al2O3/HfO2 oxides is studied. Using high frequency (1 MHz) C-Vgate measurements, the memory showed a large memory window at low program/erase voltages due to the charging of the Si-nanoparticles. The analysis of the C-V characteristics shows that mixed charges are being stored in the Si-nanoparticles where electrons get stored during the program operation while holes dominate in the Si-nanoparticles during the erase operation. Moreover, the retention characteristic of the memory is studied by measuring the memory hysteresis in time. The obtained retention characteristic (35.5% charge loss in 10 years) is due to the large conduction and valence band offsets between the Si-nanoparticles and the Al2O3/HfO2 tunnel oxide. The results show that band engineering is essential in future low-power non-volatile memory devices. In addition, the results show that Si-nanoparticles are promising in memory applications. © The Electrochemical Society

International nosocomial infection control consortium (INICC) report, data summary of 36 countries, for 2004-2009

The results of a surveillance study conducted by the International Nosocomial Infection Control Consortium (INICC) from January 2004 through December 2009 in 422 intensive care units (ICUs) of 36 countries in Latin America, Asia, Africa, and Europe are reported. During the 6-year study period, using Centers for Disease Control and Prevention (CDC) National Healthcare Safety Network (NHSN; formerly the National Nosocomial Infection Surveillance system [NNIS]) definitions for device-associated health care-associated infections, we gathered prospective data from 313,008 patients hospitalized in the consortium's ICUs for an aggregate of 2,194,897 ICU bed-days. Despite the fact that the use of devices in the developing countries' ICUs was remarkably similar to that reported in US ICUs in the CDC's NHSN, rates of device-associated nosocomial infection were significantly higher in the ICUs of the INICC hospitals; the pooled rate of central line-associated bloodstream infection in the INICC ICUs of 6.8 per 1,000 central line-days was more than 3-fold higher than the 2.0 per 1,000 central line-days reported in comparable US ICUs. The overall rate of ventilator-associated pneumonia also was far higher (15.8 vs 3.3 per 1,000 ventilator-days), as was the rate of catheter-associated urinary tract infection (6.3 vs. 3.3 per 1,000 catheter-days). Notably, the frequencies of resistance of Pseudomonas aeruginosa isolates to imipenem (47.2% vs 23.0%), Klebsiella pneumoniae isolates to ceftazidime (76.3% vs 27.1%), Escherichia coli isolates to ceftazidime (66.7% vs 8.1%), Staphylococcus aureus isolates to methicillin (84.4% vs 56.8%), were also higher in the consortium's ICUs, and the crude unadjusted excess mortalities of device-related infections ranged from 7.3% (for catheter-associated urinary tract infection) to 15.2% (for ventilator-associated pneumonia). Copyright © 2012 by the Association for Professionals in Infection Control and Epidemiology, Inc. Published by Elsevier Inc. All rights reserved

Graphene nanoplatelets embedded in HfO<inf>2</inf> for MOS memory

In this work, a MOS memory with graphene nanoplatelets charge trapping layer and a double layer high-κ Al2O3/HfO2 tunnel oxide is demonstrated. Using C-Vgate measurements, the memory showed a large memory window at low program/erase voltages. The analysis of the C-V characteristics shows that electrons are being stored in the graphene-nanoplatelets during the program operation. In addition, the retention characteristic of the memory is studied by plotting the hysteresis measurement vs. time. The measured excellent retention characteristic (28.8% charge loss in 10 years) is due to the large electron affinity of the graphene. The analysis of the plot of the energy band diagram of the MOS structure further proves its good retention characteristic. Finally, the results show that such graphene nanoplatelets are promising in future low-power non-volatile memory devices. © The Electrochemical Society

Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> tunnel oxide

In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the same memory structure with 2.85-nm Si nanoparticles charge trapping layer. The results show that graphene nanoplatelets with Al2O3/HfO2 tunnel oxide allow for larger memory windows at the same operating voltages, enhanced retention, and endurance characteristics. The measurements are further confirmed by plotting the energy band diagram of the structures, calculating the quantum tunneling probabilities, and analyzing the charge transport mechanism. Also, the required program time of the memory with ultra-thin asymmetric Al2O3/HfO2 tunnel oxide with graphene nanoplatelets storage layer is calculated under Fowler-Nordheim tunneling regime and found to be 4.1 ns making it the fastest fully programmed MOS memory due to the observed pure electrons storage in the graphene nanoplatelets. With Si nanoparticles, however, the program time is larger due to the mixed charge storage. The results confirm that band-engineering of both tunnel oxide and charge trapping layer is required to enhance the current non-volatile memory characteristics. © 2015, El-Atab et al

GWAS and colocalization analyses implicate carotid intima-media thickness and carotid plaque loci in cardiovascular outcomes.

Carotid artery intima media thickness (cIMT) and carotid plaque are measures of subclinical atherosclerosis associated with ischemic stroke and coronary heart disease (CHD). Here, we undertake meta-analyses of genome-wide association studies (GWAS) in 71,128 individuals for cIMT, and 48,434 individuals for carotid plaque traits. We identify eight novel susceptibility loci for cIMT, one independent association at the previously-identified PINX1 locus, and one novel locus for carotid plaque. Colocalization analysis with nearby vascular expression quantitative loci (cis-eQTLs) derived from arterial wall and metabolic tissues obtained from patients with CHD identifies candidate genes at two potentially additional loci, ADAMTS9 and LOXL4. LD score regression reveals significant genetic correlations between cIMT and plaque traits, and both cIMT and plaque with CHD, any stroke subtype and ischemic stroke. Our study provides insights into genes and tissue-specific regulatory mechanisms linking atherosclerosis both to its functional genomic origins and its clinical consequences in humans