Invited; Contact effects towards mainstream thin-film transistor applications

Thin-film source-gated transistors (SGTs) [1] have been developed steadily over the last couple of decades, demonstrating important properties which span virtually all thin-film material systems [2], [3]. By virtue of their control mechanism, which relies on an energy barrier deliberately engineered at the source, they present impressive intrinsic gain [4], [5], tolerance to variability [6], stability [7], and temperature sensing utility [8]. Recently, numerous groups have adopted the architecture [2], [3] and conceptual evolutions have led to new and highly functional TFT devices [9]–[11]. As the contact-controlled nature of these transistors introduces a relatively large temperature dependence of drain current, and also drastically reduces the current density, for a given geometry, recent research (Fig. 1-3) is focusing on shifting the balance away from these limitations [12]–[14], without compromising the structure’s advantages. Please click Download on the upper right corner to see the full abstract

Novel Tunnel-Contact-Controlled IGZO Thin-Film Transistors with High Tolerance to Geometrical Variability.

Thin insulating layers are used to modulate a depletion region at the source of a thin-film transistor. Bottom contact, staggered-electrode indium gallium zinc oxide transistors with a 3 nm Al2 O3 layer between the semiconductor and Ni source/drain contacts, show behaviors typical of source-gated transistors (SGTs): low saturation voltage (VD_SAT ≈ 3 V), change in VD_SAT with a gate voltage of only 0.12 V V-1 , and flat saturated output characteristics (small dependence of drain current on drain voltage). The transistors show high tolerance to geometry: the saturated current changes only 0.15× for 2-50 µm channels and 2× for 9-45 µm source-gate overlaps. A higher than expected (5×) increase in drain current for a 30 K change in temperature, similar to Schottky-contact SGTs, underlines a more complex device operation than previously theorized. Optimization for increasing intrinsic gain and reducing temperature effects is discussed. These devices complete the portfolio of contact-controlled transistors, comprising devices with Schottky contacts, bulk barrier, or heterojunctions, and now, tunneling insulating layers. The findings should also apply to nanowire transistors, leading to new low-power, robust design approaches as large-scale fabrication techniques with sub-nanometer control mature

Current Status and Opportunities of Organic Thin-Film Transistor Technologies

Ajudes: National Key Research and Development Program of "Strategic Advanced Electronic Materials" under Grant 2016YFB0401100 and in part by the NSFC of China under Grant 61274083 and Grant 61334008.Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. Despite both strong application demand and these significant technological advances, there is still a gap to be filled for OTFT technology to be widely commercially adopted. This paper providesa comprehensive reviewof the current status of OTFT technologies ranging from material, device, process, and integration, to design and system applications, and clarifies the real challenges behind to be addressed

Impact of Safety-Related Dose Reductions or Discontinuations on Sustained Virologic Response in HCV-Infected Patients: Results from the GUARD-C Cohort.

BACKGROUND: Despite the introduction of direct-acting antiviral agents for chronic hepatitis C virus (HCV) infection, peginterferon alfa/ribavirin remains relevant in many resource-constrained settings. The non-randomized GUARD-C cohort investigated baseline predictors of safety-related dose reductions or discontinuations (sr-RD) and their impact on sustained virologic response (SVR) in patients receiving peginterferon alfa/ribavirin in routine practice. METHODS: A total of 3181 HCV-mono-infected treatment-naive patients were assigned to 24 or 48 weeks of peginterferon alfa/ribavirin by their physician. Patients were categorized by time-to-first sr-RD (Week 4/12). Detailed analyses of the impact of sr-RD on SVR24 (HCV RNA <50 IU/mL) were conducted in 951 Caucasian, noncirrhotic genotype (G)1 patients assigned to peginterferon alfa-2a/ribavirin for 48 weeks. The probability of SVR24 was identified by a baseline scoring system (range: 0-9 points) on which scores of 5 to 9 and <5 represent high and low probability of SVR24, respectively. RESULTS: SVR24 rates were 46.1% (754/1634), 77.1% (279/362), 68.0% (514/756), and 51.3% (203/396), respectively, in G1, 2, 3, and 4 patients. Overall, 16.9% and 21.8% patients experienced ≥1 sr-RD for peginterferon alfa and ribavirin, respectively. Among Caucasian noncirrhotic G1 patients: female sex, lower body mass index, pre-existing cardiovascular/pulmonary disease, and low hematological indices were prognostic factors of sr-RD; SVR24 was lower in patients with ≥1 vs. no sr-RD by Week 4 (37.9% vs. 54.4%; P = 0.0046) and Week 12 (41.7% vs. 55.3%; P = 0.0016); sr-RD by Week 4/12 significantly reduced SVR24 in patients with scores <5 but not ≥5. CONCLUSIONS: In conclusion, sr-RD to peginterferon alfa-2a/ribavirin significantly impacts on SVR24 rates in treatment-naive G1 noncirrhotic Caucasian patients. Baseline characteristics can help select patients with a high probability of SVR24 and a low probability of sr-RD with peginterferon alfa-2a/ribavirin.This study was sponsored by F. Hoffmann-La Roche Ltd, Basel, Switzerland. Support for third-party writing assistance for this manuscript, furnished by Blair Jarvis MSc, ELS, of Health Interactions, was provided by F. Hoffmann-La Roche Ltd, Basel, Switzerland

Impact of safety-related dose reductions or discontinuations on sustained virologic response in HCV-infected patients: Results from the GUARD-C Cohort

Background: Despite the introduction of direct-acting antiviral agents for chronic hepatitis C virus (HCV) infection, peginterferon alfa/ribavirin remains relevant in many resource-constrained settings. The non-randomized GUARD-C cohort investigated baseline predictors of safety-related dose reductions or discontinuations (sr-RD) and their impact on sustained virologic response (SVR) in patients receiving peginterferon alfa/ribavirin in routine practice. Methods: A total of 3181 HCV-mono-infected treatment-naive patients were assigned to 24 or 48 weeks of peginterferon alfa/ribavirin by their physician. Patients were categorized by time-to-first sr-RD (Week 4/12). Detailed analyses of the impact of sr-RD on SVR24 (HCV RNA <50 IU/mL) were conducted in 951 Caucasian, noncirrhotic genotype (G)1 patients assigned to peginterferon alfa-2a/ribavirin for 48 weeks. The probability of SVR24 was identified by a baseline scoring system (range: 0-9 points) on which scores of 5 to 9 and <5 represent high and low probability of SVR24, respectively. Results: SVR24 rates were 46.1 % (754/1634), 77.1% (279/362), 68.0% (514/756), and 51.3% (203/396), respectively, in G1,2, 3, and 4 patients. Overall, 16.9% and 21.8% patients experienced 651 sr-RD for peginterferon alfa and ribavirin, respectively. Among Caucasian noncirrhotic G1 patients: female sex, lower body mass index, pre-existing cardiovascular/pulmonary disease, and low hematological indices were prognostic factors of sr-RD; SVR24 was lower in patients with 651 vs. no sr-RD by Week 4 (37.9% vs. 54.4%; P = 0.0046) and Week 12 (41.7% vs. 55.3%; P = 0.0016); sr-RD by Week 4/12 significantly reduced SVR24 in patients with scores <5 but not 655. Conclusions: In conclusion, sr-RD to peginterferon alfa-2a/ribavirin significantly impacts on SVR24 rates in treatment-naive G1 noncirrhotic Caucasian patients. Baseline characteristics can help select patients with a high probability of SVR24 and a low probability of sr-RD with peginter-feron alfa-2a/ribavirin

Simulation study of overlap capacitance in source-gated transistors for current-mode pixel drivers

Contrary to conventional design principles, currentdriven pixel drivers based on source-gated transistors (SGTs) achieve their optimal drive current and speed with a deliberate 5 -10μm gate-source overlap. Total pixel circuit area need not increase, as the additional device area can be compensated by reducing the pixel storage capacitor. Numerical simulations demonstrate the viability of SGTs for emissive pixel drivers and high gain, low power, robust circuits for emerging sensor arrays

Contact Doping as a Design Strategy for Compact TFT-Based Temperature Sensing

Contact-controlled devices, such as source-gated transistors (SGTs), deliberately use energy barriers at the source, and naturally, the positive temperature dependence (PTD) of drain current can be utilized for temperature sensing. We exploit the difference in drain current activation energy, which arises with contact doping in polysilicon n-type contact-controlled transistors, to demonstrate output current with either a PTD or negative temperature dependence (NTD). The range over which output current varies linearly with temperature, as well as the sensitivity, can be tailored by the choice of reference current magnitude and relative source contact properties within the current mirror. The sensing scheme simplifies the circuit design because it relies solely on thin-film transistors and it has inherent immunity to output voltage variation. This ability to tune the sign of temperature dependence allows facile integration in applications requiring homeostasis via feedback, e.g., electronic skin, in a minimal layout area and potentially with convenient reduction of patterning steps during fabrication