Surface Freshwater Limitation Explains Worst Rice Production Anomaly in India in 2002

India is the second-most populous country and the second-most important producer of rice of the world. Most Indian rice production depends on monsoon timing and dynamics. In 2002, the lowest monsoon precipitation of the last 130+ years was observed. It coincided with the worst rice production anomaly recorded by FAOSTAT from 1961 to 2014. In that year, freshwater limitation was blamed as responsible for the yield losses in the southeastern coastal regions. Given the important implication for local food security and international market stability, we here investigate the specific mechanisms behind the effects of this extreme meteorological drought on rice yield at the national and regional levels. To this purpose, we integrate output from the hydrological model, surface, and satellite observations for the different rice cropping cycles into state-of-the-art and novel climate indicators. In particular, we adopt the standardized precipitation evapotranspiration index (SPEI) as an indicator of drought due to the local surface water balance anomalies (i.e., precipitation and evapotranspiration). We propose a new indicator of the renewable surface freshwater availability due to non-local sources, i.e., the standardized river discharge index (SDI) based on the anomalies of modelled river discharge data. We compare these indicators to the soil moisture observations retrieved from satellites. We link all diagnostics to the recorded yields at the national and regional level, quantifying the long-term correlations and the best match of the 2002 anomaly. Our findings highlight the need for integrating non-local surface freshwater dynamics with local rainfall variability to determine the soil moisture conditions in rice fields for yields assessment, modeling, and forecasting

influence of block copolymer feature size on reactive ion etching pattern transfer into silicon

A successful realisation of sub-20 nm features on silicon (Si) is becoming the focus of many technological studies, strongly influencing the future performance of modern integrated circuits. Although reactive ion etching (RIE), at both micrometric and nanometric scale has already been the target of many studies, a better understanding of the different mechanisms involved at sub-20 nm size etching is still required. In this work, we investigated the influence of the feature size on the etch rate of Si, performed by a cryogenic RIE process through cylinder-forming polystyrene-block-polymethylmethacrylate (PS-b-PMMA) diblock copolymer (DBC) masks with diameter ranging between 19–13 nm. A sensible decrease of the etch depth and etch rate was observed in the mask with the smallest feature size. For all the DBCs under investigation, we determined the process window useful for the correct transfer of the nanometric cylindrical pattern into a Si substrate. A structural and physicochemical investigation of the resulting nanostructured Si is reported in order to delineate the influence of various RIE pattern effects. Feature-size-dependent etch, or RIE-lag, is proved to significantly affect the obtained results

Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction

Atom-thin transition metal dichalcogenides (TMDs) have emerged as fascinating materials and key structures for electrocatalysis. So far, their edges, dopant heteroatoms and defects have been intensively explored as active sites for the hydrogen evolution reaction (HER) to split water. However, grain boundaries (GBs), a key type of defects in TMDs, have been overlooked due to their low density and large structural variations. Here, we demonstrate the synthesis of wafer-size atom-thin TMD films with an ultra-high-density of GBs, up to ~1012 cm−2. We propose a climb and drive 0D/2D interaction to explain the underlying growth mechanism. The electrocatalytic activity of the nanograin film is comprehensively examined by micro-electrochemical measurements, showing an excellent hydrogen-evolution performance (onset potential: −25 mV and Tafel slope: 54 mV dec−1), thus indicating an intrinsically high activation of the TMD GBs

The energy band alignment of Si nanocrystals in SiO2

International audienceThe determination of the energy band alignment between the 2.6-nm-diameter Si nanocrystals and the SiO2 host is achieved by means of photo-ionization/-neutralization and capacitance spectroscopy. The measured conduction and valence band offsets are 2.6 eV and 4.4 eV. The band gap is evaluated to be 1.7 eV by photoluminescence. These results indicate that the valence band offset at the Si nanocrystals/SiO2 interface is quite close to the one observed at bulk Si/SiO2 interface. On the contrary, we observe a clear upward shift (0.5 eV) of the conduction band in the Si nanocrystals/SiO2 system with respect to the bulk Si/SiO2 hetero-structure

Atomic layer deposited TiO2 for implantable brain-chip interfacing devices

In this paper we investigated atomic layer deposition (ALD) TiO2 thin films deposited on implantable neuro-chips based on electrolyte-oxide-semiconductor (EOS) junctions, implementing both efficient capacitive neuron-silicon coupling and biocompatibility for longterm implantable functionality. The ALD process was performed at 295 \ub0C using titanium tetraisopropoxide and ozone as precursors on needle-shaped silicon substrates. Engineering of the capacitance of the EOS junctions introducing a thin Al2O3 buffer layer between TiO2 and silicon resulted in a further increase of the specific capacitance. Biocompatibility for long-term implantable neuroprosthetic systems was checked upon in-vitro treatment