A class of exponential chain ratio-product type estimators with two auxiliary variables under double sampling scheme

In this paper an exponential chain ratio-product-type estimators in double sampling has been developed using information on two supplementary characters for estimating the finite population mean. The optimum property of the suggested strategy has been studied. Comparisons of the efficiency of the proposed estimator under the optimality condition with other estimators have been presented through empirical investigations

A Dielectrically Modulated AlGaN/InN/GaN Nanoelectronic High Electron Mobility Transistor based Biosensor for Protein Detection

150-156In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. Conduction band engineering of the biosensor is studied. DC and RF properties of the designed biosensor are studied. Sensitivity of the biosensor is studied corresponding to electric field, surface potential, drain current, transconductance, and current gain cut-off frequency. Sufficient sensitivity is obtained corresponding to each electrical parameter to detect the virus-protein. This work may be helpful to design and experimentally fabricate the HEMT based biosensor

Investigation to Enhance the DC and RF Performances of Nitride-Based Nanoelectronic HEMTs

In this work, a structural optimisation is performed on the basis of DC and RF performances of high electron mobility transistors (HEMTs) in nano-scale regime by simulation results obtained from SILVACO-ATLAS physical simulator. The formation of quantum well is demonstrated at unbiased condition in each type of these HEMT structures. In DC analysis of each structure, the variations in drain current are studied with respect to drain voltage, gate voltage and doping concentration. Also, the variations in transconductance are studied with gate voltage and doping concentration corresponding to each structure. In RF analysis, the variations in current gain cut-off frequency and power gain cut-off frequency are studied with gate voltage and doping concentration corresponding to each structure. The DC and RF performances are observed to be the highest for modified HEMT structure with inserted InN atomic layer (0.36 nm thick) having AlGaN doping concentration of 4×1018 cm-3 among all designed structures in this work. To investigate the effect of doping concentration on DC and RF performances in nano-scale regime is one novelty in this work. Our work may be helpful in the applications related to biomedical sensors. Also, our work may be suitable for high frequency applications

Investigation to Enhance the DC and RF Performances of Nitride-Based Nanoelectronic HEMTs

619-628In this work, a structural optimisation is performed on the basis of DC and RF performances of high electron mobility transistors (HEMTs) in nano-scale regime by simulation results obtained from SILVACO-ATLAS physical simulator. The formation of quantum well is demonstrated at unbiased condition in each type of these HEMT structures. In DC analysis of each structure, the variations in drain current are studied with respect to drain voltage, gate voltage and doping concentration. Also, the variations in transconductance are studied with gate voltage and doping concentration corresponding to each structure. In RF analysis, the variations in current gain cut-off frequency and power gain cut-off frequency are studied with gate voltage and doping concentration corresponding to each structure. The DC and RF performances are observed to be the highest for modified HEMT structure with inserted InN atomic layer (0.36 nm thick) having AlGaN doping concentration of 4×1018 cm-3 among all designed structures in this work. To investigate the effect of doping concentration on DC and RF performances in nano-scale regime is one novelty in this work. Our work may be helpful in the applications related to biomedical sensors. Also, our work may be suitable for high frequency applications

USES OF MEMS ACCELEROMETER IN SEISMOLOGY

ABSTRACT Life and property has been damaged due to the large magnitude earthquake in the world. It is necessary to develop some system to predict the time of the earthquake using some modern technology. MEMS Accelerometer is one of the modern technologies used for detecting the early information of earthquake. In this paper, the review of current trend of uses of MEMS Accelerometer for detecting and predicting of earthquake has been discussed

A Dielectrically Modulated AlGaN/InN/GaN Nanoelectronic High Electron Mobility Transistor based Biosensor for Protein Detection

In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. Conduction band engineering of the biosensor is studied. DC and RF properties of the designed biosensor are studied. Sensitivity of the biosensor is studied corresponding to electric field, surface potential, drain current, transconductance, and current gain cut-off frequency. Sufficient sensitivity is obtained corresponding to each electrical parameter to detect the virus-protein. This work may be helpful to design and experimentally fabricate the HEMT based biosensor

Development of a compact pulse power driver for operation of table-top fusion device

A detailed design and testing of a pulsed power system (PPS) which has been developed in order to drive a table-top inertial electrostatic confinement (IEC) fusion device are presented over here. A 0.04 µF, 100 kV capacitor has been used to store the energy for generating the pulse. Along with the capacitor, other critical components such as high-voltage spark gap switch, high-voltage power supply, high power resistors, and diodes, triggering unit have been combined to develop the PPS. The discharge current and voltage pulse have been recorded by using high voltage and current probes, respectively. A current peak of $$\sim$$ 17.5 A at an input potential of − 70 kV and a power dissipation peak of $$\sim$$ 1200 kW have been observed when the spherical IEC fusion device is used as the load in the PPS