Co distribution in ferromagnetic rutile Co-doped TiO2_2 thin films grown by laser ablation on silicon substrates

Pure rutile Co-doped TiO$_2$ films were fabricated successfully by the conventional pulsed laser deposition technique on silicon substrates from a ceramic target. Under the right fabrication conditions, Co concentration in the films could be almost the same as in the synthesized target, and films under various conditions all are ferromagnetic well above room temperature. Even though Rutherford backscattering spectroscopy measurements show that Co atoms seem to be mostly localized near the surface of the films and less exist in deeper levels, other experimental evidences show that the ferromagnetism does not come from Co segregations but from the Co-doped TiO$_2$ matrix. Rutile Ti$_1-x$Co$_x$O$_2$ thin films grown by a very simple technique on low-price silicon substrates showing Curie temperature (TC) above 400 K appear to be very attractive to applications.Comment: 1 file, 13 pages, 4 figures. to be published in Appl. Phys. Lett. (2003

Asymmetric Mediator in Scotogenic Model

The scotogenic model is the Standard Model (SM) with Z_2 symmetry and the addition of Z_2 odd right-handed Majorana neutrinos and SU(2)_L doublet scalar fields. We have extended the original scotogenic model by an additional Z_2 odd singlet scalar field that plays a role in dark matter. In our model, the asymmetries of the lepton and Z_2 odd doublet scalar are simultaneously produced through CP-violating right-handed neutrino decays. While the former is converted into baryon asymmetry through the sphaleron process, the latter is relaid to the DM density through the decay of SU(2)_L doublet scalar that is named "asymmetric mediator". In this way, we provide an extended scotogenic model that predicts the energy densities of baryon and dark matter being in the same order of magnitude, and also explains the low-energy neutrino masses and mixing angles.Comment: 17 pages, 1 table, 5 figure

Control of lateral composition distribution in graded films of soluble solid systems A1-xBx by partitioned dual-beam pulsed laser deposition

Altres ajuts: AGAUR agency (project 2017SGR)Lateral compositionally-graded thin films are powerful media for the observation of phase boundaries aswell as for high-throughputmaterials exploration.We herein propose amethod to prepare epitaxial lateral compositionally-graded films using a dual-beampulsed laser deposition (PLD)method with two targets separated by a partition. Tuning the ambient pressure and the partition-substrate gap makes it possible to control of the gradient length of the deposits at the small sizes (≤ 10 mm) suitable for commercial oxide single crystal substrates. A simple Monte Carlo simulation qualitatively reproduced the characteristic features of the lateral thickness distribution. To demonstrate this method, we prepared (1-x)PbTiO-xPbZrO and (1-x)LaMnOLaSrMnO films with lateral composition gradient widths of 10 and 1 mm, respectively, with the partitioned dual PLD

Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb(Mg1/3Nb2/3)O 3-PbTiO3 films grown on (100)cSrRuO 3∥(100)SrTiO3 substrates by metal-organic chemical vapor deposition

Relaxor-type ferroelectric (1-x)Pb(Mg1/3Nb2/3)O 3-xPbTiO3 (PMN-PT) films, 2-3 μm in thickness, with a PbTiO3 content (x) ranging from 0 to 1 were grown on (100) cSrRuO3∥(100)SrTiO3 substrates at 650°C by metal-organic chemical vapor deposition. The effects the x value had on the crystal structure, dielectric and ferroelectric properties, and mechanical response of these films were systematically investigated. Epitaxial growth having (100)/(001) orientation irrespective of x and the constituent phase change with x were ascertained from both x-ray diffraction reciprocal space mapping analysis and Raman spectroscopy. The constituent phase changed from a rhombohedral (pseudocubic) single phase, a mixture phase of rhombohedral (pseudocubic) and tetragonal phases, and a tetragonal single phase, with increasing x. The mixed phase region was found to exist at x=0.40-0.55, which was different from that reported for single crystals (x=0.31-0.35). The dependencies of relative dielectric constant and remanent polarization on x showed a similar trend in the case of a PMN-PT sintered body; however, the magnitudes of these values were relatively low. The effective longitudinal piezoelectric coefficient (d33,f) and the transverse coefficient (e31,f) of 100-120 pm/V and ∼-11.0 C/m2 were, respectively, calculated for a film with x=0.39, which corresponds to a larger x edge for the rhombohedral (pseudocubic) region following the engineered domain concept proposed for PMN-PT single crystals

Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering

This work was supported by a Grant-in-Aid for Scientific Research (Grant No. 15K04652) from the Japan Society for the Promotion of Science.We report on the first observation of the persistent M2 phase in strongly strained (011)-oriented grains in VO₂ films grown on Al₂O₃ (001) substrates by means of conventional rf reactive sputtering under adequate deposition conditions. Spatially resolved micro-Raman spectra clearly showed that (011)-oriented large crystalline grains with the cR-axis parallel to the substrate resulted in the appearance of the M2 phase over a wide temperature range of 30 °C. A close correlation of the appearance range of the M2 phase with the in-plane tensile stress of (011)-oriented grains was revealed by X-ray diffraction. We present a phase diagram for the M1, M2, and R phases in relation to the stress of (011)-oriented grains and temperature. It was shown that (011)-oriented micrometer-sized long grains play a crucial role in the emerging structural phase transition (SPT) via an M2 phase even in a film grown on Al₂O₃ (001), which is ordinarily reserved for the (020)-oriented VO₂ growth. The results shown here will contribute to make clear the conditions for obtaining VO₂ films with the appearance of the M2 phase in their SPT process

Terahertz displacive excitation of a coherent Raman-active phonon in V2O3

Nonlinear processes involving frequency-mixing of light fields set the basis for ultrafast coherent spectroscopy of collective modes in solids. In certain semimetals and semiconductors, generation of coherent phonon modes can occur by a displacive force on the lattice at the difference-frequency mixing of a laser pulse excitation on the electronic system. Here, as a low-frequency counterpart of this process, we demonstrate that coherent phonon excitations can be induced by the sum-frequency components of an intense terahertz light field, coupled to intraband electronic transitions. This nonlinear process leads to charge-coupled coherent dynamics of Raman-active phonon modes in the strongly correlated metal VO. Our results show an alternative up-conversion pathway for the optical control of Raman-active modes in solids mediated by terahertz-driven electronic excitation

An N-terminal motif in NLR immune receptors is functionally conserved across distantly related plant species

The molecular codes underpinning the functions of plant NLR immune receptors are poorly understood. We used in vitro Mu transposition to generate a random truncation library and identify the minimal functional region of NLRs. We applied this method to NRC4-a helper NLR that functions with multiple sensor NLRs within a Solanaceae receptor network. This revealed that the NRC4 N-terminal 29 amino acids are sufficient to induce hypersensitive cell death. This region is defined by the consensus MADAxVSFxVxKLxxLLxxEx (MADA motif) that is conserved at the N-termini of NRC family proteins and ~20% of coiled-coil (CC)-type plant NLRs. The MADA motif matches the N-terminal a1 helix of Arabidopsis NLR protein ZAR1, which undergoes a conformational switch during resistosome activation. Immunoassays revealed that the MADA motif is functionally conserved across NLRs from distantly related plant species. NRC-dependent sensor NLRs lack MADA sequences indicating that this motif has degenerated in sensor NLRs over evolutionary time

Status Report of the DPHEP Study Group: Towards a Global Effort for Sustainable Data Preservation in High Energy Physics

Data from high-energy physics (HEP) experiments are collected with significant financial and human effort and are mostly unique. An inter-experimental study group on HEP data preservation and long-term analysis was convened as a panel of the International Committee for Future Accelerators (ICFA). The group was formed by large collider-based experiments and investigated the technical and organisational aspects of HEP data preservation. An intermediate report was released in November 2009 addressing the general issues of data preservation in HEP. This paper includes and extends the intermediate report. It provides an analysis of the research case for data preservation and a detailed description of the various projects at experiment, laboratory and international levels. In addition, the paper provides a concrete proposal for an international organisation in charge of the data management and policies in high-energy physics

The GALEX Ultraviolet Atlas of Nearby Galaxies

We present images, integrated photometry, surface-brightness and color profiles for a total of 1034 nearby galaxies recently observed by the GALEX satellite in its far-ultraviolet (FUV; 1516A) and near-ultraviolet (NUV; 2267A) bands. (...) This data set has been complemented with archival optical, near-infrared, and far-infrared fluxes and colors. We find that the integrated (FUV-K) color provides robust discrimination between elliptical and spiral/irregular galaxies and also among spiral galaxies of different sub-types. Elliptical galaxies with brighter K-band luminosities (i.e. more massive) are redder in (NUV-K) color but bluer in (FUV-NUV) than less massive ellipticals. In the case of the spiral/irregular galaxies our analysis shows the presence of a relatively tight correlation between the (FUV-NUV) color and the total infrared-to-UV ratio. The correlation found between (FUV-NUV) color and K-band luminosity (with lower luminosity objects being bluer than more luminous ones) can be explained as due to an increase in the dust content with galaxy luminosity. The images in this Atlas along with the profiles and integrated properties are publicly available through a dedicated web page at http://nedwww.ipac.caltech.edu/level5/GALEX_Atlas/Comment: 181 pages, 10 figures, accepted for publication in ApJS (abstract abridged