31 research outputs found

    New Material for Si-Based Light Source Application for CMOS Technology

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    In this chapter, an approach to enhance the radiative recombination of the Ge film grown on the Si substrate is presented. The Ge band gap structure could be modified by applying a tensile strain and high n-doping in the Ge epilayers. It thus becomes a direct band gap material with high photoluminescence efficiency which is compatible with mainstream silicon technology. The interdiffusion effect between Ge film and Si substrate is also mentioned in this section. We proposed a new method to suppress the Si/Ge interdiffusion to reduce the effect of Si atoms on the optical property of Ge film due to Si presence

    Germanium Band Gap Engineering Induced by Tensile Strain for Si-Based Optoelectronic Applications

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    We have combined structural and optical characterizations to investigate the tensile-strained state and the band gap engineering of Ge layers grown on Si(001) using molecular beam epitaxy. The tensile strain is generated in the Ge layers due to a difference of thermal expansion coefficients between Ge and Si. The Ge growth on Si(001) was proceeded using a two-step growth process: a low-temperature step to produce relaxed buffer layers, followed by a high-temperature step to generate the tensile strain in the Ge layers. For the low-temperature step, we have evidenced the existence of a substrate temperature window from 260 to 300300\circC in which the well-known Stranski-Krastanov Ge/Si growth mode transition from two-dimensional to three-dimensional growth can be completely suppressed. We show that the value of the tensile strain in the Ge layers lineally increases with increasing the growth temperature and reaches a saturation value of 0.24\sim 0.24% in the temperature range of 700770700-770\circC. Post-grown cyclic thermal annealing has allowed to increase the tensile strain up to 0.30%, which is the highest value ever reported to date. Finally, photoluminescence measurements reveal both an enhancement of the Ge direct band gap emission and a reduction of its energy due to the presence of tensile strain in the layers

    Two plant-associated Bacillus velezensis strains selected after genome analysis, metabolite profiling, and with proved biocontrol potential, were enhancing harvest yield of coffee and black pepper in large field trials

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    Elimination of chemically synthesized pesticides, such as fungicides and nematicides, in agricultural products is a key to successful practice of the Vietnamese agriculture. We describe here the route for developing successful biostimulants based on members of the Bacillus subtilis species complex. A number of endospore-forming Gram-positive bacterial strains with antagonistic action against plant pathogens were isolated from Vietnamese crop plants. Based on their draft genome sequence, thirty of them were assigned to the Bacillus subtilis species complex. Most of them were assigned to the species Bacillus velezensis. Whole genome sequencing of strains BT2.4 and BP1.2A corroborated their close relatedness to B. velezensis FZB42, the model strain for Gram-positive plant growth-promoting bacteria. Genome mining revealed that at least 15 natural product biosynthesis gene clusters (BGCs) are well conserved in all B. velezensis strains. In total, 36 different BGCs were identified in the genomes of the strains representing B. velezensis, B. subtilis, Bacillus tequilensis, and Bacillus. altitudinis. In vitro and in vivo assays demonstrated the potential of the B. velezensis strains to enhance plant growth and to suppress phytopathogenic fungi and nematodes. Due to their promising potential to stimulate plant growth and to support plant health, the B. velezensis strains TL7 and S1 were selected as starting material for the development of novel biostimulants, and biocontrol agents efficient in protecting the important Vietnamese crop plants black pepper and coffee against phytopathogens. The results of the large-scale field trials performed in the Central Highlands in Vietnam corroborated that TL7 and S1 are efficient in stimulating plant growth and protecting plant health in large-scale applications. It was shown that treatment with both bioformulations resulted in prevention of the pathogenic pressure exerted by nematodes, fungi, and oomycetes, and increased harvest yield in coffee, and pepper.Peer Reviewe

    Safety and efficacy of fluoxetine on functional outcome after acute stroke (AFFINITY): a randomised, double-blind, placebo-controlled trial

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    Background Trials of fluoxetine for recovery after stroke report conflicting results. The Assessment oF FluoxetINe In sTroke recoverY (AFFINITY) trial aimed to show if daily oral fluoxetine for 6 months after stroke improves functional outcome in an ethnically diverse population. Methods AFFINITY was a randomised, parallel-group, double-blind, placebo-controlled trial done in 43 hospital stroke units in Australia (n=29), New Zealand (four), and Vietnam (ten). Eligible patients were adults (aged ≥18 years) with a clinical diagnosis of acute stroke in the previous 2–15 days, brain imaging consistent with ischaemic or haemorrhagic stroke, and a persisting neurological deficit that produced a modified Rankin Scale (mRS) score of 1 or more. Patients were randomly assigned 1:1 via a web-based system using a minimisation algorithm to once daily, oral fluoxetine 20 mg capsules or matching placebo for 6 months. Patients, carers, investigators, and outcome assessors were masked to the treatment allocation. The primary outcome was functional status, measured by the mRS, at 6 months. The primary analysis was an ordinal logistic regression of the mRS at 6 months, adjusted for minimisation variables. Primary and safety analyses were done according to the patient's treatment allocation. The trial is registered with the Australian New Zealand Clinical Trials Registry, ACTRN12611000774921. Findings Between Jan 11, 2013, and June 30, 2019, 1280 patients were recruited in Australia (n=532), New Zealand (n=42), and Vietnam (n=706), of whom 642 were randomly assigned to fluoxetine and 638 were randomly assigned to placebo. Mean duration of trial treatment was 167 days (SD 48·1). At 6 months, mRS data were available in 624 (97%) patients in the fluoxetine group and 632 (99%) in the placebo group. The distribution of mRS categories was similar in the fluoxetine and placebo groups (adjusted common odds ratio 0·94, 95% CI 0·76–1·15; p=0·53). Compared with patients in the placebo group, patients in the fluoxetine group had more falls (20 [3%] vs seven [1%]; p=0·018), bone fractures (19 [3%] vs six [1%]; p=0·014), and epileptic seizures (ten [2%] vs two [<1%]; p=0·038) at 6 months. Interpretation Oral fluoxetine 20 mg daily for 6 months after acute stroke did not improve functional outcome and increased the risk of falls, bone fractures, and epileptic seizures. These results do not support the use of fluoxetine to improve functional outcome after stroke

    Epitaxial growth of tensile-strained and heavily n-doped Ge for Si-based optoelectronic applications

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    Le silicium (Si) et le germanium (Ge) sont les matériaux de base utilisés dans les circuits intégrés. Cependant, à cause de leur gap indirect, ces matériaux ne sont pas adaptés à la fabrication de dispositifs d'émission de lumière, comme les lasers ou diodes électroluminescentes. Comparé au Si, le Ge pur possède des propriétés optiques uniques, à température ambiante son gap direct est de seulement 140 meV au-delà du gap indirect tandis qu'il est supérieur à 2 eV dans le cas du Si. Compte tenu du coefficient de dilatation thermique du Ge, deux fois plus grand que celui du Si, une croissance de Ge sur Si à hautes températures suivie d'un refroidissement à température ambiante permet de générer une contrainte en tension dans le Ge. Cependant, l'existence d'un désaccord de maille de 4,2% entre deux matériaux conduit à une croissance Stranski-Krastanov avec la formation des films rugueux et contenant de forte densité des dislocations. Nous avons mis en évidence l'existence d'une fenêtre de température de croissance, permettant de supprimer la croissance tridimensionnelle de Ge/Si. En combinant la croissance à haute température à des recuits thermiques par cycles, une contrainte de 0,30% a pu être obtenue. Le dopage de type n a été effectué en utilisant la décomposition de GaP, ce qui produit des molécules P2 ayant un coefficient de collage plus grand par rapport à celui des molécules P4. En particulier, en mettant en oeuvre la technique du co-dopage en utilisant le phosphore et l'antimoine, nous avons mis en évidence une augmentation de l'émission du gap direct du Ge à environ 150 fois, ce qui constitue l'un des meilleurs résultats obtenus jusqu'à présent.Silicon (Si) and germanium (Ge) are the main materials used as active layers in microelectronic devices. However, due to their indirect band gap, they are not suitable for the fabrication of light emitting devices, such as lasers or electroluminescent diodes. Compared to Si, pure Ge displays unique optical properties, its direct bandgap is only 140 meV above the indirect one. As Ge has a thermal expansion coefficient twice larger than that of Si, tensile strain can be induced in the Ge layers when growing Ge on Si at high temperatures and subsequent cooling down to room temperature. However, due to the existence of a misfit as high as 4.2 % between two materials, the Ge growth on Si proceeds via the Stranski-Krastanov mode and the epitaxial Ge films exhibits a rough surface and a high density of dislocations. We have evidenced the existence of a narrow substrate temperature window, allowing suppressing the three-dimensional growth of Ge on Si. By combining high-temperature growth with cyclic annealing, we obtained a tensile strain up to 0.30 %. The n-doping in Ge was carried out using the decomposition of GaP to produce the P2 molecules, which have a higher sticking coefficient than the P4 molecules. In particular, by implementing a co-doping technique using phosphorus and antimony, we have evidenced an intensity enhancement of about 150 times of the Ge direct band gap emission. This result represents as one of the best results obtained up to now

    Draft Genome Sequences of 59 Endospore-Forming Gram-Positive Bacteria Associated with Crop Plants Grown in Vietnam

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    We report the draft genome sequences of 59 Gram-positive bacterial strains that were isolated from Vietnamese crop plants. The strains were assigned to nine different Bacillus and Brevibacillus species. Ten strains classified as being a Bacillus sp. (3 strains), Brevibacillus sp. (6 strains), or Lysinibacillus sp. (1 strain) could not be identified to the species level.Peer Reviewe

    A Novel Approach of Antiviral Drugs Targeting Viral Genomes

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    Outbreaks of viral diseases, which cause morbidity and mortality in animals and humans, are increasing annually worldwide. Vaccines, antiviral drugs, and antibody therapeutics are the most effective tools for combating viral infection. The ongoing coronavirus disease 2019 pandemic, in particular, raises an urgent need for the development of rapid and broad-spectrum therapeutics. Current antiviral drugs and antiviral antibodies, which are mostly specific at protein levels, have encountered difficulties because the rapid evolution of mutant viral strains resulted in drug resistance. Therefore, degrading viral genomes is considered a novel approach for developing antiviral drugs. The current article highlights all potent candidates that exhibit antiviral activity by digesting viral genomes such as RNases, RNA interference, interferon-stimulated genes 20, and CRISPR/Cas systems. Besides that, we introduce a potential single-chain variable fragment (scFv) that presents antiviral activity against various DNA and RNA viruses due to its unique nucleic acid hydrolyzing characteristic, promoting it as a promising candidate for broad-spectrum antiviral therapeutics

    KHXH&amp;NV: Hơn một thập kỷ tăng số lượng và chất lượng công bố quốc tế

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    Trong những năm gần đây, mặc dù lĩnh vực KHXH&amp;NV của Việt Nam mới đang ở giai đoạn đầu của quá trình hội nhập về công bố quốc tế và xuất bản học thuật, nhưng các con số thống kê được vẫn rất đáng khích lệ
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