Diamond power devices: state of the art, modelling, figures of merit and future perspective

Abstract: With its remarkable electro-thermal properties such as the highest known thermal conductivity (~22 W cm−1∙K−1 at RT of any material, high hole mobility (>2000 cm2 V−1 s−1), high critical electric field (>10 MV cm−1), and large band gap (5.47 eV), diamond has overwhelming advantages over silicon and other wide bandgap semiconductors (WBGs) for ultra-high-voltage and high-temperature (HT) applications (>3 kV and >450 K, respectively). However, despite their tremendous potential, fabricated devices based on this material have not yet delivered the expected high performance. The main reason behind this is the absence of shallow donor and acceptor species. The second reason is the lack of consistent physical models and design approaches specific to diamond-based devices that could significantly accelerate their development. The third reason is that the best performances of diamond devices are expected only when the highest electric field in reverse bias can be achieved, something that has not been widely obtained yet. In this context, HT operation and unique device structures based on the two-dimensional hole gas (2DHG) formation represent two alternatives that could alleviate the issue of the incomplete ionization of dopant species. Nevertheless, ultra-HT operations and device parallelization could result in severe thermal management issues and affect the overall stability and long-term reliability. In addition, problems connected to the reproducibility and long-term stability of 2DHG-based devices still need to be resolved. This review paper aims at addressing these issues by providing the power device research community with a detailed set of physical models, device designs and challenges associated with all the aspects of the diamond power device value chain, from the definition of figures of merit, the material growth and processing conditions, to packaging solutions and targeted applications. Finally, the paper will conclude with suggestions on how to design power converters with diamond devices and will provide the roadmap of diamond device development for power electronics

A 380 GHz SIS receiver using Nb/AlO(x)/Nb junctions for a radioastronomical balloon-borne experiment: PRONAOS

The superheterodyne detection technique used for the spectrometer instrument of the PRONAOS project will provide a very high spectral resolution (delta nu/nu = 10(exp -6)). The most critical components are those located at the front-end of the receiver: their contribution dominates the total noise of the receiver. Therefore, it is important to perform accurate studies for specific components, such as mixers and multipliers working in the submillimeter wave range. Difficulties in generating enough local oscillator (LO) power at high frequencies make SIS mixers very desirable for operation above 300 GHz. The low LO power requirements and the low noise temperature of these mixers are the primary reason for building an SIS receiver. This paper reports the successful fabrication of small (less than or equal to 1 sq micron) Nb/Al-O(x)/Nb junctions and arrays with excellent I-V characteristics and very good reliability, resulting in a low noise receiver performance measured in the 368/380 GHz frequency range

Resonant tunneling diodes as sources for millimeter and submillimeter wavelengths

High-quality Resonant Tunneling Diodes have been fabricated and tested as sources for millimeter and submillimeter wavelengths. The devices have shown excellent I-V characteristics with peak-to-valley current ratios as high as 6:1 and current densities in the range of 50-150 kA/cm(exp 2) at 300 K. Used as local oscillators, the diodes are capable of state of the art output power delivered by AlGaAs-based tunneling devices. As harmonic multipliers, a frequency of 320 GHz has been achieved by quintupling the fundamental oscillation of a klystron source

Lorenz function of Bi2_{2}Te3_{3}/Sb2_{2}Te3_{3} superlattices

Combining first principles density functional theory and semi-classical Boltzmann transport, the anisotropic Lorenz function was studied for thermoelectric Bi$_{2}$Te$_{3}$/Sb$_{2}$Te$_{3}$ superlattices and their bulk constituents. It was found that already for the bulk materials Bi$_{2}$Te$_{3}$ and Sb$_{2}$Te$_{3}$, the Lorenz function is not a pellucid function on charge carrier concentration and temperature. For electron-doped Bi$_{2}$Te$_{3}$/Sb$_{2}$Te$_{3}$ superlattices large oscillatory deviations for the Lorenz function from the metallic limit were found even at high charge carrier concentrations. The latter can be referred to quantum well effects, which occur at distinct superlattice periods

Clustering effect in Simon and Simeck

SIMON and SIMECK are two lightweight block ciphers with a simple round function using only word rotations and a bit-wise AND operation. Previous work has shown a strong clustering effect for differential and linear cryptanalysis, due to the existence of many trails with the same inputs and outputs. In this paper, we explore this clustering effect by exhibiting a class of high probability differential and linear trails where the active bits stay in a fixed window of w bits. Instead of enumerating a set of good trails contributing to a differential or a linear approximation, we compute the probability distribution over this space, including all trails in the class. This results in stronger distinguishers than previously proposed, and we describe key recovery attacks against SIMON and SIMECK improving the previous results by u

Absorbing boundary conditions for the Westervelt equation

The focus of this work is on the construction of a family of nonlinear absorbing boundary conditions for the Westervelt equation in one and two space dimensions. The principal ingredient used in the design of such conditions is pseudo-differential calculus. This approach enables to develop high order boundary conditions in a consistent way which are typically more accurate than their low order analogs. Under the hypothesis of small initial data, we establish local well-posedness for the Westervelt equation with the absorbing boundary conditions. The performed numerical experiments illustrate the efficiency of the proposed boundary conditions for different regimes of wave propagation

Bacterial pore-forming toxins: the (w)hole story?

Pore-forming toxins (PFTs) are the most common class of bacterial protein toxins and constitute important bacterial virulence factors. The mode of action of PFT is starting to be better understood. In contrast, little is known about the cellular response to this threat. Recent studies reveal that cells do not just swell and lyse, but are able to sense and react to pore formation, mount a defense, even repair the damaged membrane and thus survive. These responses involve a variety of signal-transduction pathways and sophisticated cellular mechanisms such as the pathway regulating lipid metabolism. In this review we discuss the different classes of bacterial PFTs and their modes of action, and provide examples of how the different bacteria use PFTs. Finally, we address the more recent field dealing with the eukaryotic cell response to PFT-induced damag

Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers

International audienceThe ability to precisely control the thermal conductivity (κ) of a material is fundamental in the development of on-chip heat management or energy conversion applications. Nanostructuring permits a marked reduction of κ of single-crystalline materials, as recently demonstrated for silicon nanowires. However, silicon-based nanostructured materials with extremely low κ are not limited to nanowires. By engineering a set of individual phonon-scattering nanodot barriers we have accurately tailored the thermal conductivity of a single-crystalline SiGe material in spatially defined regions as short as ∼15 nm. Single-barrier thermal resistances between 2 and 4×10−9 m2 K W−1 were attained, resulting in a room-temperature κ down to about 0.9 W m−1 K−1, in multilayered structures with as little as five barriers. Such low thermal conductivity is compatible with a totally diffuse mismatch model for the barriers, and it is well below the amorphous limit. The results are in agreement with atomistic Green’s function simulations

Performance of the CMS Cathode Strip Chambers with Cosmic Rays

The Cathode Strip Chambers (CSCs) constitute the primary muon tracking device in the CMS endcaps. Their performance has been evaluated using data taken during a cosmic ray run in fall 2008. Measured noise levels are low, with the number of noisy channels well below 1%. Coordinate resolution was measured for all types of chambers, and fall in the range 47 microns to 243 microns. The efficiencies for local charged track triggers, for hit and for segments reconstruction were measured, and are above 99%. The timing resolution per layer is approximately 5 ns