684 research outputs found

    Excitonic Effects in Quantum Wires

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    We review the effects of Coulomb correlation on the linear and non-linear optical properties of semiconductor quantum wires, with emphasis on recent results for the bound excitonic states. Our theoretical approach is based on generalized semiconductor Bloch equations, and allows full three-dimensional multisubband description of electron-hole correlation for arbitrary confinement profiles. In particular, we consider V- and T-shaped structures for which significant experimental advances were obtained recently. Above band gap, a very general result obtained by this approach is that electron-hole Coulomb correlation removes the inverse-square-root single-particle singularity in the optical spectra at band edge, in agreement with previous reports from purely one-dimensional models. Strong correlation effects on transitions in the continuum are found to persist also at high densities of photoexcited carriers. Below bandgap, we find that the same potential- (Coulomb) to kinetic-energy ratio holds for quite different wire cross sections and compositions. As a consequence, we identify a shape- and barrier-independent parameter that governs a universal scaling law for exciton binding energy with size. Previous indications that the shape of the wire cross-section may have important effects on exciton binding are discussed in the light of the present results.Comment: Proc. OECS-5 Conference, G\"ottingen, 1997 (To appear in Phys. Stat. Sol. (b)

    Sharp-line electroluminescence from individual quantum dots by resonant tunneling injection of carriers

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    We report sharp electroluminescence lines from individual self-assembled InAs quantum dots (QDs) excited by resonant tunneling injection of carriers from the n- and p-doped GaAs layers of a p-i-n diode. Bias-tunable tunneling of carriers into the dots provides a means of controlling injection and light emission from a small number of individual dots within a large ensemble. We also show that the extent of carrier energy relaxation prior to recombination can be controlled by tailoring the morphology of the QD layer. © 2006 American Institute of Physics

    Classifying the unknown: discovering novel gravitational-wave detector glitches using similarity learning

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    The observation of gravitational waves from compact binary coalescences by LIGO and Virgo has begun a new era in astronomy. A critical challenge in making detections is determining whether loud transient features in the data are caused by gravitational waves or by instrumental or environmental sources. The citizen-science project \emph{Gravity Spy} has been demonstrated as an efficient infrastructure for classifying known types of noise transients (glitches) through a combination of data analysis performed by both citizen volunteers and machine learning. We present the next iteration of this project, using similarity indices to empower citizen scientists to create large data sets of unknown transients, which can then be used to facilitate supervised machine-learning characterization. This new evolution aims to alleviate a persistent challenge that plagues both citizen-science and instrumental detector work: the ability to build large samples of relatively rare events. Using two families of transient noise that appeared unexpectedly during LIGO's second observing run (O2), we demonstrate the impact that the similarity indices could have had on finding these new glitch types in the Gravity Spy program

    Quantum confined acceptors and donors in InSe nanosheets

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    We report on the radiative recombination of photo-excited carriers bound at native donors and acceptors in exfoliated nanoflakes of nominally undoped rhombohedral gamma-polytype InSe. The binding energies of these states are found to increase with the decrease in flake thickness, L. We model their dependence on L using a two-dimensional hydrogenic model for impurities and show that they are strongly sensitive to the position of the impurities within the nanolayer. (c) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License

    Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices

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    In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs’ PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs
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