Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic

Schottky junction reconfigurable FETs suffer from limited output currents to drive the following stages, jeopardizing their viability for high-end applications. This drawback becomes dramatic at low voltages. In this work, an analogous novel low-bias reprogrammable device is presented. It features a dual PN doping at source and drain which improves the driving current density thanks to the presence of both electron and hole reservoirs within the same structure. 3D-TCAD results for this innovative device on advanced Silicon-on-Insulator technology are presented and compared with traditional reconfigurable FETs and CMOS structures

3D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs

3-D numerical technology computer-aided design simulations, based on experimental results, are performed to study the origin of the large Z 2 -FET dynamic random access memory (DRAM) memory cell-to-cell variability on fully depleted silicon-on-insulator (FD-SOI) technology. The body width, cross section shape, and the passivation-induced lateral and top interface state density impacts on the device dynamic memory operation are investigated. The width and body shape arise as marginal metrics not strongly inducing fluctuations in the device triggering conditions. However, the interface state (D it ) control, especially at the top of the ungated section, emerges as the main challenge since traps significantly increase the ON-voltage variability threatening the capacitor-less DRAM operation.H2020 REMINDER European (grant agreement No 687931) and Spanish National TEC2017-89800-R and PCIN-2015-146 projects are acknowledged for financial support

Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell

The experimental time-dependent dielectric breakdown and ON voltage reliability of advanced FD-SOI Z2-FET memory cells are characterized for the first time. The front-gate stress time is shown to significantly modulate the ON voltage and, hence, the memory window. The Weibull slope, β, indicating the device variability to breakdown, and the time to soft breakdown, α, present different trends depending on the cell geometry. This fact highlights the tradeoff between variability and reliability to account for in Z2-FET designs.H2020 REMINDER project (grant agreement No 687931) and TEC2017-89800-R are thanked for financial support

InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell performance dependence on several parameters (such as the back-gate voltage, semiconductor thickness, indium/gallium mole fraction or interface traps) and simulation models (like ballisticity or spatial quantum confinement) is analyzed and commented. Functional cells are presented and compared with analogous silicon 1T-DRAM memories to highlight the advantages and drawbacks.This work was supported by H2020 REMINDER European under Grant 687931, and in part by the Spanish National Projects under Grant TEC2014-59730 and Grant PCIN-2015-146

Investigating the transient response of Schottky barrier back-gated MoS2 transistors

Molybdenum disulfide (MoS2) MOSFETs have been widely reported to exhibit hysteresis behavior, which is usually attributed to charge trapping effects due to defective/sub-stoichiometric compositions in the material, or defects near, or at, the oxide/channel interfaces. It is also suggested that defective MoS2 transistors show current limitations caused by the Schottky barrier junctions formed at the contacts. Here, we report on the static and dynamic device response of back-gated MoS2 transistors directly fabricated on a SiO2/Si substrate using chemical vapor deposition synthesis, without film transfer, and standard CMOS optical lithography. The devices exhibit an atypical hysteresis in the transfer characteristics, as well as a delayed response in the formation of the conducting channel in response to voltage pulses applied to the back gate. Analysis of the output characteristic is consistent with two back-to-back Schottky diodes, allowing the Fermi level pinning position at the Ni/MoS2 source and drain contacts and blocking the MoS2 hole channel. Capacitance-voltage characterization demonstrates that the grown MoS2 thin film is p-type, resulting in a nominally-off, inversion mode, n-channel device. Analysis of the transient response and hysteresis as a function of device temperature, illumination and ambient conditions indicates that the dynamic response of the device is determined by the net charge in the MoS2 film combined with the minority carrier generation lifetime in the underlying silicon substrate. The work demonstrates the strong dependence of the device response time on substrate, temperature, illumination, and net charge in the MoS2 layer opening the possibility of applications in photo-detectors and sensors.Spanish National Program (grant No. TEC2017-89800-R)ASCENT access to nanoelectronics infrastructure (EU Horizon 2020 programme grant No 654384)Science Foundation Ireland, through the IvP award INVEST (SFI-15/IA/3131) and AMBER (12/RC/2278-P2).Jose Castillejo mobility (grant No. CAS18/00460)University of Granada Plan Propio Programme 8

Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells

Thin-oxide Z2-FET cells operating as capacitor-less DRAM devices are experimentally demonstrated. Both the retention time and memory window demonstrate the feasibility of implementing this cell in advanced 28 nm node FD SOI technology. Nevertheless a performance drop and higher variability with respect to thicker oxide Z2-FET cells are observed.H2020 REMINDER European project (grant agreementNo 687931) and TEC2014-59730 are thanked for financialsupport

Procedimiento de detección de radiación y partículas empleando un diodo semiconductor por modulacion de bandas de energia

Número de publicación: 2 770 473Número de solicitud: 201831304Procedimiento de detección de radiación y partículas empleando un diodo semiconductor por modulación de bandas de energía. La presente invención describe un procedimiento que permite la detección de partículas o radiación empleando un diodo por modulación de bandas de energía. La utilización de esta invención resulta especialmente interesante para detectar radiación incidente de partículas cargadas u ondas electromagnéticas, por lo que también son objeto de la invención los dispositivos para la detección de partículas o radiación, que comprenden al menos un diodo por modulación de bandas de energía y los medios necesarios para llevar a cabo la detección.Universidad de Granad

Extended analysis of the Z2-FET: Operation as capacitor-less eDRAM

This article has been accepted for publication by IEEE "Navarro Moral, C.; et al. Extended analysis of the Z2-FET: Operation as capacitor-less eDRAM. IEEE Transactions on Electron Devices, 64(11): 4486-4491 (2017). DOI: 10.1109/TED.2017.2751141(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works."The Z2-FET operation as capacitorless DRAM is analyzed using advanced 2-D TCAD simulations for IoT applications. The simulated architecture is built based on actual 28-nm fully depleted silicon-on-insulator devices. It is found that the triggering mechanism is dominated by the front-gate bias and the carrier’s diffusion length. As in other FB-DRAMs, the memory window is defined by the ON voltage shift with the stored body charge. However, the Z2-FET’s memory state is not exclusively defined by the inner charge but also by the reading conditions

Famílies botàniques de plantes medicinals

Facultat de Farmàcia, Universitat de Barcelona. Ensenyament: Grau de Farmàcia, Assignatura: Botànica Farmacèutica, Curs: 2013-2014, Coordinadors: Joan Simon, Cèsar Blanché i Maria Bosch.Els materials que aquí es presenten són els recull de 175 treballs d’una família botànica d’interès medicinal realitzats de manera individual. Els treballs han estat realitzat per la totalitat dels estudiants dels grups M-2 i M-3 de l’assignatura Botànica Farmacèutica durant els mesos d’abril i maig del curs 2013-14. Tots els treballs s’han dut a terme a través de la plataforma de GoogleDocs i han estat tutoritzats pel professor de l’assignatura i revisats i finalment co-avaluats entre els propis estudiants. L’objectiu principal de l’activitat ha estat fomentar l’aprenentatge autònom i col·laboratiu en Botànica farmacèutica

Treatment with tocilizumab or corticosteroids for COVID-19 patients with hyperinflammatory state: a multicentre cohort study (SAM-COVID-19)

Objectives: The objective of this study was to estimate the association between tocilizumab or corticosteroids and the risk of intubation or death in patients with coronavirus disease 19 (COVID-19) with a hyperinflammatory state according to clinical and laboratory parameters. Methods: A cohort study was performed in 60 Spanish hospitals including 778 patients with COVID-19 and clinical and laboratory data indicative of a hyperinflammatory state. Treatment was mainly with tocilizumab, an intermediate-high dose of corticosteroids (IHDC), a pulse dose of corticosteroids (PDC), combination therapy, or no treatment. Primary outcome was intubation or death; follow-up was 21 days. Propensity score-adjusted estimations using Cox regression (logistic regression if needed) were calculated. Propensity scores were used as confounders, matching variables and for the inverse probability of treatment weights (IPTWs). Results: In all, 88, 117, 78 and 151 patients treated with tocilizumab, IHDC, PDC, and combination therapy, respectively, were compared with 344 untreated patients. The primary endpoint occurred in 10 (11.4%), 27 (23.1%), 12 (15.4%), 40 (25.6%) and 69 (21.1%), respectively. The IPTW-based hazard ratios (odds ratio for combination therapy) for the primary endpoint were 0.32 (95%CI 0.22-0.47; p < 0.001) for tocilizumab, 0.82 (0.71-1.30; p 0.82) for IHDC, 0.61 (0.43-0.86; p 0.006) for PDC, and 1.17 (0.86-1.58; p 0.30) for combination therapy. Other applications of the propensity score provided similar results, but were not significant for PDC. Tocilizumab was also associated with lower hazard of death alone in IPTW analysis (0.07; 0.02-0.17; p < 0.001). Conclusions: Tocilizumab might be useful in COVID-19 patients with a hyperinflammatory state and should be prioritized for randomized trials in this situatio