Black Holes in Bulgeless Galaxies: An XMM-Newton Investigation of NGC 3367 AND NGC 4536

The vast majority of optically identified active galactic nuclei (AGNs) in the local Universe reside in host galaxies with prominent bulges, supporting the hypothesis that black hole formation and growth is fundamentally connected to the build-up of galaxy bulges. However, recent mid-infrared spectroscopic studies with Spitzer of a sample of optically "normal" late-type galaxies reveal remarkably the presence of high-ionization [NeV] lines in several sources, providing strong evidence for AGNs in these galaxies. We present follow-up X-ray observations recently obtained with XMM-Newton of two such sources, the late-type optically normal galaxies NGC 3367 and NGC 4536. Both sources are detected in our observations. Detailed spectral analysis reveals that for both galaxies, the 2-10 keV emission is dominated by a power law with an X-ray luminosity in the L(sub 2- 10 keV) approximates 10(exp 39) - 10(exp 40) ergs/s range, consistent with low luminosity AGNs. While there is a possibility that X-ray binaries account for some fraction of the observed X-ray luminosity, we argue that this fraction is negligible. These observations therefore add to the growing evidence that the fraction of late-type galaxies hosting AGNs is significantly underestimated using optical observations alone. A comparison of the midinfrared [NeV] luminosity and the X-ray luminosities suggests the presence of an additional highly absorbed X-ray source in both galaxies, and that the black hole masses are in the range of 10(exp 5) - 10(exp 7) solar M for NGC 3367 and 10(exp 4) - (exp 10) solar M for NGC 453

The even darker side of the eastern gray squirrel (Sciurus carolinensis): a review of global introductions, invasion biology, and pest management strategies

Huynh, H.M., Bertolino, S., Lurz, P.W.W., Koprowski, J.L., Williams, G.R., Thompson, C.W., McAlpine, D.F

Towards the fabrication of phosphorus qubits for a silicon quantum computer

The quest to build a quantum computer has been inspired by the recognition of the formidable computational power such a device could offer. In particular silicon-based proposals, using the nuclear or electron spin of dopants as qubits, are attractive due to the long spin relaxation times involved, their scalability, and the ease of integration with existing silicon technology. Fabrication of such devices however requires atomic scale manipulation - an immense technological challenge. We demonstrate that it is possible to fabricate an atomically-precise linear array of single phosphorus bearing molecules on a silicon surface with the required dimensions for the fabrication of a silicon-based quantum computer. We also discuss strategies for the encapsulation of these phosphorus atoms by subsequent silicon crystal growth.Comment: To Appear in Phys. Rev. B Rapid Comm. 5 pages, 5 color figure

Joule-assisted silicidation for short-channel silicon nanowire devices

We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel- silicide devices with controlled silicon channel length down to 8 nm.Comment: 6 pages, 4 figure

Single Spin Measurement using Single Electron Transistors to Probe Two Electron Systems

We present a method for measuring single spins embedded in a solid by probing two electron systems with a single electron transistor (SET). Restrictions imposed by the Pauli Principle on allowed two electron states mean that the spin state of such systems has a profound impact on the orbital states (positions) of the electrons, a parameter which SET's are extremely well suited to measure. We focus on a particular system capable of being fabricated with current technology: a Te double donor in Si adjacent to a Si/SiO2 interface and lying directly beneath the SET island electrode, and we outline a measurement strategy capable of resolving single electron and nuclear spins in this system. We discuss the limitations of the measurement imposed by spin scattering arising from fluctuations emanating from the SET and from lattice phonons. We conclude that measurement of single spins, a necessary requirement for several proposed quantum computer architectures, is feasible in Si using this strategy.Comment: 22 Pages, 8 Figures; revised version contains updated references and small textual changes. Submitted to Phys. Rev.

Tuning of Human Modulation Filters Is Carrier-Frequency Dependent

Licensed under the Creative Commons Attribution License

The diverse evolutionary pathways of post-starburst galaxies

About 35 years ago a class of galaxies with unusually strong Balmer absorption lines and weak emission lines was discovered in distant galaxy clusters(1,2). These objects, alternatively referred to as post-starburst, E+A or k+a galaxies, are now known to occur in all environments and at all redshifts(3-7), with many exhibiting compact morphologies and low-surface brightness features indicative of past galaxy mergers(3,8). They are commonly thought to represent galaxies that are transitioning from blue to red sequence, making them critical to our understanding of the origins of galaxy bimodality(9-14). However, recent observational studies have questioned this simple interpretation(15-18). From observations alone, it is challenging to disentangle the different mechanisms that lead to the quenching of star formation in galaxies. Here we present examples of three different evolutionary pathways that lead to galaxies with strong Balmer absorption lines in the Evolution and Assembly of Galaxies and their Environments (EAGLE) simulation(19,20): classical blue -> red quenching, blue -> blue cycle and red -> red rejuvenation. The first two are found in both post-starburst galaxies and galaxies with truncated star formation. Each pathway is consistent with scenarios hypothesized for observational samples(2,15,18,21,22). The fact that 'post-starburst' signatures can be attained via various evolutionary channels explains the diversity of observed properties, and lends support to the idea that slower quenching channels are important at low redshift(23,24).Peer reviewe

Developing a digital intervention for cancer survivors: an evidence-, theory- and person-based approach

This paper illustrates a rigorous approach to developing digital interventions using an evidence-, theory- and person-based approach. Intervention planning included a rapid scoping review which identified cancer survivors’ needs, including barriers and facilitators to intervention success. Review evidence (N=49 papers) informed the intervention’s Guiding Principles, theory-based behavioural analysis and logic model. The intervention was optimised based on feedback on a prototype intervention through interviews (N=96) with cancer survivors and focus groups with NHS staff and cancer charity workers (N=31). Interviews with cancer survivors highlighted barriers to engagement, such as concerns about physical activity worsening fatigue. Focus groups highlighted concerns about support appointment length and how to support distressed participants. Feedback informed intervention modifications, to maximise acceptability, feasibility and likelihood of behaviour change. Our systematic method for understanding user views enabled us to anticipate and address important barriers to engagement. This methodology may be useful to others developing digital interventions

Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires

We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid-helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one.Comment: 6 pages, 5 figure