Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures

Optoelectronic devices based on the III-nitride system exhibit remarkably good optical efficiencies despite suffering from a large density of defects. In this work we use cathodoluminescence (CL) hyperspectral imaging to study InGaN/GaN multiple quantum well (MQW) structures. Different types of trench defects with varying trench width, namely wide or narrow trenches forming closed loops and open loops, are investigated in the same hyperspectral CL measurement. A strong redshift (90 meV) and intensity increase of the MQW emission is demonstrated for regions enclosed by wide trenches, whereas those within narrower trenches only exhibit a small redshift (10 meV) and a slight reduction of intensity compared with the defect-free surrounding area. Transmission electron microscopy (TEM) showed that some trench defects consist of a raised central area, which is caused by an increase of about 40% in the thickness of the InGaN wells. The causes of the changes in luminescences are also discussed in relation to TEM results identifying the underlying structure of the defect. Understanding these defects and their emission characteristics is important for further enhancement and development of light-emitting diodes

A Peeling Approach for Integrated Manufacturing of Large Mono-Layer h-BN Crystals

Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, non-corrugated atomically thin layers. While historically used as lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator, barrier or encapsulant. Practically all emerging electronic and photonic device concepts rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. We here focus on a systematic understanding of Pt catalysed h-BN crystal formation, in order to address this integration challenge for mono-layer h-BN via an integrated chemical vapour deposition (CVD) process that enables h-BN crystal domain sizes exceeding 0.5 mm and a merged, continuous layer in a growth time less than 45 min. Theprocess makes use commercial, reusable Pt foils, and allows a delamination process for easy and clean h-BN layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. The approach can be readily combined with other layered materials and enables the integration of CVD h-BN into high quality, reliable 2D material device layer stacks

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

In this paper we report on the impact that the quantum well growth temperature has on the internal quantum efficiency and carrier recombination dynamics of two sets of InGaN/GaN multiple quantum well samples, designed to emit at 460 and 530 nm, in which the indium content of the quantum wells within each sample set was maintained. Measurements of the internal quantum efficiency of each sample set showed a systematic variation, with quantum wells grown at a higher temperature exhibiting higher internal quantum efficiency and this variation was preserved at all excitation power densities. By investigating the carrier dynamics at both 10 K and 300 K we were able to attribute this change in internal quantum efficiency to a decrease in the non-radiative recombination rate as the QW growth temperature was increased which we attribute to a decrease in incorporation of the point defects

Constant photocurrent method to probe the sub-bandgap absorption in wide bandgap semiconductor films : the case of α-Ga2O3

The optical absorption coefficient is one of the fundamental properties of semiconductors and is critical to the development of optical devices. Herein, a revival of the constant photocurrent method is presented to measure sub-bandgap absorption in wide bandgap semiconductor films. The method involves maintaining a constant photocurrent by continually adjusting the impinging photon flux across the energy spectrum. Under such conditions, the reciprocal of the photon flux for uniformly absorbed light is proportional to the absorption coefficient. This method is applied to α-Ga 2O 3 and reveals that it can access the absorption coefficient from 1 × 10 5 cm −1 at the band edge (5.3 eV) to 0.8 cm −1 close to mid-bandgap (2.7 eV). Changes in the steepness of the absorption curve in the sub-bandgap region are in excellent agreement with defect states of α-Ga 2O 3 reported by deep level transient spectroscopy, indicating that the technique shows promise as a probe of energetically distributed defect states in thin film wide bandgap semiconductors

Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3

Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures, which strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor–acceptor pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (VGa-nH) as the acceptor, where n = 1, 2, 3. Previous reports have already suggested the impact of H on the electrical properties of Ga2O3, and the present study shows its clear impact on the optical properties of α-Ga2O3

Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors

Atomic layer deposition (ALD) offers a low thermal budget method for producing α-Ga2O3 films on sapphire substrate. In this paper we review the recent progress on plasma-enhanced ALD growth of α-Ga2O3 and present the optical and photoconductive properties of the deposited films. We show that the deposited material exhibits an epitaxial relationship with the sapphire substrate, and with an atomically sharp film-substrate interface. The α-Ga2O3 films had an optical bandgap energy measured at 5.11 eV, and exhibited a broad luminescence spectrum dominated by ultraviolet, blue and green bands, in line with current literature. We finally demonstrate the suitability of the material for solar-blind photodetection

Sub-surface imaging of porous GaN distributed Bragg reflectors via backscattered electrons

In this article, porous GaN distributed Bragg reflectors (DBRs) were fabricated by epitaxy of undoped/doped multilayers followed by electrochemical etching. We present backscattered electron scanning electron microscopy (BSE-SEM) for sub-surface plan-view imaging, enabling efficient, non-destructive pore morphology characterization. In mesoporous GaN DBRs, BSE-SEM images the same branching pores and Voronoi-like domains as scanning transmission electron microscopy. In microporous GaN DBRs, micrographs were dominated by first porous layer features (45 nm to 108 nm sub-surface) with diffuse second layer (153 nm to 216 nm sub-surface) contributions. The optimum primary electron landing energy (LE) for image contrast and spatial resolution in a Zeiss GeminiSEM 300 was approximately 20 keV. BSE-SEM detects porosity ca. 295 nm sub-surface in an overgrown porous GaN DBR, yielding low contrast that is still first porous layer dominated. Imaging through a ca. 190 nm GaN cap improves contrast. We derived image contrast, spatial resolution, and information depth expectations from semi-empirical expressions. These theoretical studies echo our experiments as image contrast and spatial resolution can improve with higher LE, plateauing towards 30 keV. BSE-SEM is predicted to be dominated by the uppermost porous layer's uppermost region, congruent with experimental analysis. Most pertinently, information depth increases with LE, as observed

Blood Signature of Pre-Heart Failure: A Microarrays Study

International audienceBACKGROUND: The preclinical stage of systolic heart failure (HF), known as asymptomatic left ventricular dysfunction (ALVD), is diagnosed only by echocardiography, frequent in the general population and leads to a high risk of developing severe HF. Large scale screening for ALVD is a difficult task and represents a major unmet clinical challenge that requires the determination of ALVD biomarkers. METHODOLOGY/PRINCIPAL FINDINGS: 294 individuals were screened by echocardiography. We identified 9 ALVD cases out of 128 subjects with cardiovascular risk factors. White blood cell gene expression profiling was performed using pangenomic microarrays. Data were analyzed using principal component analysis (PCA) and Significant Analysis of Microarrays (SAM). To build an ALVD classifier model, we used the nearest centroid classification method (NCCM) with the ClaNC software package. Classification performance was determined using the leave-one-out cross-validation method. Blood transcriptome analysis provided a specific molecular signature for ALVD which defined a model based on 7 genes capable of discriminating ALVD cases. Analysis of an ALVD patients validation group demonstrated that these genes are accurate diagnostic predictors for ALVD with 87% accuracy and 100% precision. Furthermore, Receiver Operating Characteristic curves of expression levels confirmed that 6 out of 7 genes discriminate for left ventricular dysfunction classification. CONCLUSIONS/SIGNIFICANCE: These targets could serve to enhance the ability to efficiently detect ALVD by general care practitioners to facilitate preemptive initiation of medical treatment preventing the development of HF

A meditation on boredom: Re-appraising its value through introspective phenomenology

Boredom is almost universally regarded as a dysphoric mental state, characterised by features such as disengagement and low arousal. However, in certain quarters (e.g., Zen Buddhism), boredom is seen as potentially having great value and even importance. The current study sought to explore boredom through a case study involving introspective phenomenology. The author created conditions in which he would experience boredom for an hour, and recorded his experience in real-time using a variant of the Experiencing Sampling Method. The data were analysed using an adaptation of Interpretative Phenomenological Analysis. The results indicated that the state of boredom contained three main sources of value: (a) altered perception of time; (b) awakened curiosity about the environment; and (c) exploration of self. Consequently, the paper offers a re-appraisal of boredom, suggesting that rather than necessarily being a negative state, if engaged with, boredom has the potential to be a positive and rewarding experience

Behavioural indicators of welfare in farmed fish

Behaviour represents a reaction to the environment as fish perceive it and is therefore a key element of fish welfare. This review summarises the main findings on how behavioural changes have been used to assess welfare in farmed fish, using both functional and feeling-based approaches. Changes in foraging behaviour, ventilatory activity, aggression, individual and group swimming behaviour, stereotypic and abnormal behaviour have been linked with acute and chronic stressors in aquaculture and can therefore be regarded as likely indicators of poor welfare. On the contrary, measurements of exploratory behaviour, feed anticipatory activity and reward-related operant behaviour are beginning to be considered as indicators of positive emotions and welfare in fish. Despite the lack of scientific agreement about the existence of sentience in fish, the possibility that they are capable of both positive and negative emotions may contribute to the development of new strategies (e. g. environmental enrichment) to promote good welfare. Numerous studies that use behavioural indicators of welfare show that behavioural changes can be interpreted as either good or poor welfare depending on the fish species. It is therefore essential to understand the species-specific biology before drawing any conclusions in relation to welfare. In addition, different individuals within the same species may exhibit divergent coping strategies towards stressors, and what is tolerated by some individuals may be detrimental to others. Therefore, the assessment of welfare in a few individuals may not represent the average welfare of a group and vice versa. This underlines the need to develop on-farm, operational behavioural welfare indicators that can be easily used to assess not only the individual welfare but also the welfare of the whole group (e. g. spatial distribution). With the ongoing development of video technology and image processing, the on-farm surveillance of behaviour may in the near future represent a low-cost, noninvasive tool to assess the welfare of farmed fish.Fundação para a Ciência e Tecnologia, Portugal [SFRH/BPD/42015/2007]info:eu-repo/semantics/publishedVersio