388 research outputs found

    Land expropriation in tourism development: Residents' attitudinal change and its influencing mechanism.

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    The development of tourism projects is often predicated on land expropriation. It is therefore important to understand residents' attitudes towards land expropriation and how changes in those attitudes can benefit both the land expropriation process and tourism development. Taking Wudaoliang in Sandaogou village in Hebei province as a case study, this study focuses on residents' attitudinal change by taking a longitudinal approach involving non-participant observation and 180 interviews. Critical event analysis was conducted, and a framework for modelling attitudinal change was adopted. The results show that the attitudes of rural residents towards tourism development were not static but underwent a dynamic process of change across three phases. These results suggest that residents should deepen their involvement in the land expropriation process and that information transparency can reduce social conflict, which will facilitate the sustainable development of rural tourism. The theoretical and practical contributions of this study are also discussed

    Large extraordinary Hall effect in [Pt/Co]5/Ru/[Co/Pt]5 multilayer

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    This Brief Report presents giant extraordinary Hall effect (EHE) in the Ru-mediated antiferromagnetically coupled [Pt/Co]5/Ru/[Co/Pt]5 multilayers (MLs) compared with those MLs without the Ru spacer. The enhancement of the EHE is attributed to the strong Ru/Co interface scattering. Through the variation in the Pt layer thickness and the temperature, we determine the relation between the Hall voltage and the longitudinal resistivity. It is found that the conventional scaling analysis has difficulties in consistently interpreting our data

    Partial Wave Analysis of J/ψγ(K+Kπ+π)J/\psi \to \gamma (K^+K^-\pi^+\pi^-)

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    BES data on J/ψγ(K+Kπ+π)J/\psi \to \gamma (K^+K^-\pi^+\pi^-) are presented. The KKˉK^*\bar K^* contribution peaks strongly near threshold. It is fitted with a broad 0+0^{-+} resonance with mass M=1800±100M = 1800 \pm 100 MeV, width Γ=500±200\Gamma = 500 \pm 200 MeV. A broad 2++2^{++} resonance peaking at 2020 MeV is also required with width 500\sim 500 MeV. There is further evidence for a 2+2^{-+} component peaking at 2.55 GeV. The non-KKˉK^*\bar K^* contribution is close to phase space; it peaks at 2.6 GeV and is very different from KKˉK^{*}\bar{K^{*}}.Comment: 15 pages, 6 figures, 1 table, Submitted to PL

    Measurement of the Atmospheric Muon Spectrum from 20 to 3000 GeV

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    The absolute muon flux between 20 GeV and 3000 GeV is measured with the L3 magnetic muon spectrometer for zenith angles ranging from 0 degree to 58 degree. Due to the large exposure of about 150 m2 sr d, and the excellent momentum resolution of the L3 muon chambers, a precision of 2.3 % at 150 GeV in the vertical direction is achieved. The ratio of positive to negative muons is studied between 20 GeV and 500 GeV, and the average vertical muon charge ratio is found to be 1.285 +- 0.003 (stat.) +- 0.019 (syst.).Comment: Total 32 pages, 9Figure

    Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

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    The use of laser beams as excitation sources for the characterization of semiconductor nanowires (NWs) is largely extended. Raman spectroscopy and photoluminescence (PL) are currently applied to the study of NWs. However, NWs are systems with poor thermal conductivity and poor heat dissipation, which result in unintentional heating under the excitation with a focused laser beam with microscopic size, as those usually used in microRaman and microPL experiments. On the other hand, the NWs have subwavelength diameter, which changes the optical absorption with respect to the absorption in bulk materials. Furthermore, the NW diameter is smaller than the laser beam spot, which means that the optical power absorbed by the NW depends on its position inside the laser beam spot. A detailed analysis of the interaction between a microscopic focused laser beam and semiconductor NWs is necessary for the understanding of the experiments involving laser beam excitation of NWs. We present in this work a numerical analysis of the thermal transport in Si NWs, where the heat source is the laser energy locally absorbed by the NW. This analysis takes account of the optical absorption, the thermal conductivity, the dimensions, diameter and length of the NWs, and the immersion medium. Both free standing and heat-sunk NWs are considered. Also, the temperature distribution in ensembles of NWs is discussed. This analysis intends to constitute a tool for the understanding of the thermal phenomena induced by laser beams in semiconductor NWs
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