LNL irradiation facilities for radiation damage studies on electronic devices

In this paper we will review the wide range of irradiation facilities installed at the INFN Legnaro National Laboratories and routinely used for radiation damage studies on silicon detectors, electronic components and systems. The SIRAD irradiation facility, dedicated to Single Event Effect (SEE) and bulk damage studies, is installed at the 14MV Tandem XTU accelerator and can deliver ion beams from H up to Au in the energy range from 28MeV to 300 MeV. An Ion Electron Emission Microscope, also installed at SIRAD, allows SEE testing with micrometric sensitivity. For total dose tests, two facilities are presently available: an X-rays source and a 60Co γ-ray source. The 7MV Van de Graaff CN accelerator provides 1H beams in the energy range 2–7MeV and currents up to few μA for both total dose and bulk damage studies. At this facility, very high dose rates (up to ∼100 krad/s (SiO2)) can be achieved. Finally, also neutron beams are available, produced at the CN accelerator, by the reaction d + Be ⇒ n+B

Performance studies of the CMS strip tracker before installation

Peer reviewe

CMS physics technical design report : Addendum on high density QCD with heavy ions

Peer reviewe

An improved fabrication technology for silicon detectors with integrated JFET/MOSFET electronics

We report on an improved fabrication technology allowing n-JFET/n-MOSFET charge sensitive amplifiers to be monolithically integrated with radiation detectors on high resistivity silicon substrates. The new process features a high energy (1MeV) Boron implantation which ensures an effective JFET isolation from the substrate and a strong modulating effect on the current. Additional process modifications have been included to implement poly-Si gate, self-aligned n-MOSFETs, which can ease the design of fully integrated read-out channels. Selected results from the experimental characterization of transistors and charge sensitive amplifiers are presented, showing a sizable enhancement in the noise performance