Processing technology for high efficiency silicon solar cells

Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented

Further research on high open circuit voltage in silicon solar cells

The results of a new research on the use of controlled dopant profiles and oxide passivation to achieve high open circuit voltage V sub oc in silicon solar cells is presented. Ion implantation has been used to obtain nearly optimal values of surface dopant concentration. The concentrations are selected so as to minimize heavy doping effects and thereby provide both high blue response and high V sub oc ion implantation technique has been successfully applied to fabrication of both n-type and p-type emitters. V sub oc of up to 660 mV is reported and AMO efficiency of 16.1% has been obtained

InP shallow-homojunction solar cells

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited

Local Environment of Ferromagnetically Ordered Mn in Epitaxial InMnAs

The magnetic properties of the ferromagnetic semiconductor In0.98Mn0.02As were characterized by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. The Mn exhibits an atomic-like L2,3 absorption spectrum that indicates that the 3d states are highly localized. In addition, a large dichroism at the Mn L2,3 edge was observed from 5-300 K at an applied field of 2T. A calculated spectrum assuming atomic Mn2+ yields the best agreement with the experimental InMnAs spectrum. A comparison of the dichroism spectra of MnAs and InMnAs show clear differences suggesting that the ferromagnetism observed in InMnAs is not due to hexagonal MnAs clusters. The temperature dependence of the dichroism indicates the presence of two ferromagnetic species, one with a transition temperature of 30 K and another with a transition temperature in excess of 300 K. The dichroism spectra are consistent with the assignment of the low temperature species to random substitutional Mn and the high temperature species to Mn near-neighbor pairs.Comment: 10 pages, 4 figures, accepted by Applied Physics Letter

Annealing-Dependent Magnetic Depth Profile in Ga[1-x]Mn[x]As

We have studied the depth-dependent magnetic and structural properties of as-grown and optimally annealed Ga[1-x]Mn[x]As films using polarized neutron reflectometry. In addition to increasing total magnetization, the annealing process was observed to produce a significantly more homogeneous distribution of the magnetization. This difference in the films is attributed to the redistribution of Mn at interstitial sites during the annealing process. Also, we have seen evidence of significant magnetization depletion at the surface of both as-grown and annealed films.Comment: 5 pages, 3 figure

Ebstein’s anomaly may be caused by mutations in the sarcomere protein gene MYH7

Ebstein's anomaly is a rare congenital heart malformation characterised by adherence of the septal and posterior leaflets of the tricuspid valve to the underlying myocardium. Associated abnormalities of left ventricular morphology and function including left ventricular noncompaction (LVNC) have been observed. An association between Ebstein's anomaly with LVNC and mutations in the sarcomeric protein gene MYH7, encoding β-myosin heavy chain, has been shown by recent studies. This might represent a specific subtype of Ebstein's anomaly with a Mendelian inheritance pattern. In this review we discuss the association of MYH7 mutations with Ebstein's anomaly and LVNC and its implications for the clinical care for patients and their family members.Congenital Heart Diseas

The Breakdown of the Fingerprinting of Vortices by Hysteresis Loops in Circular Multilayer Ring Arrays

Microscale single-layer ferromagnetic rings typically exhibit a magnetic vortex state at remanence, characterized by a flux-closed magnetic state with zero stray fields. Magnetic reversal in such systems yields a vanishing remanent magnetization. In contrast, the authors show that in individual layers in thin rings, which alternate magnetic and nonmagnetic materials (NiFe/Cu/Co), layer-resolved hysteresis loops, measured using x-ray resonant magnetic scattering, exhibit the characteristics of a vortex formation, although photoelectron emission microscopy and micromagnetic simulations clearly prove that multidomain states are formed. This result is of considerable importance for the development of pseudo-spin-valve-type structures for applications

The Breakdown of the Fingerprinting of Vortices by Hysteresis Loops in Circular Multilayer Ring Arrays

Microscale single-layer ferromagnetic rings typically exhibit a magnetic vortex state at remanence, characterized by a flux-closed magnetic state with zero stray fields. Magnetic reversal in such systems yields a vanishing remanent magnetization. In contrast, the authors show that in individual layers in thin rings, which alternate magnetic and nonmagnetic materials (NiFe/Cu/Co), layer-resolved hysteresis loops, measured using x-ray resonant magnetic scattering, exhibit the characteristics of a vortex formation, although photoelectron emission microscopy and micromagnetic simulations clearly prove that multidomain states are formed. This result is of considerable importance for the development of pseudo-spin-valve-type structures for applications

Novel Blood Pressure Locus and Gene Discovery Using Genome-Wide Association Study and Expression Data Sets From Blood and the Kidney.

Elevated blood pressure is a major risk factor for cardiovascular disease and has a substantial genetic contribution. Genetic variation influencing blood pressure has the potential to identify new pharmacological targets for the treatment of hypertension. To discover additional novel blood pressure loci, we used 1000 Genomes Project-based imputation in 150 134 European ancestry individuals and sought significant evidence for independent replication in a further 228 245 individuals. We report 6 new signals of association in or near HSPB7, TNXB, LRP12, LOC283335, SEPT9, and AKT2, and provide new replication evidence for a further 2 signals in EBF2 and NFKBIA Combining large whole-blood gene expression resources totaling 12 607 individuals, we investigated all novel and previously reported signals and identified 48 genes with evidence for involvement in blood pressure regulation that are significant in multiple resources. Three novel kidney-specific signals were also detected. These robustly implicated genes may provide new leads for therapeutic innovation