Further research on high open circuit voltage in silicon solar cells

The results of a new research on the use of controlled dopant profiles and oxide passivation to achieve high open circuit voltage V sub oc in silicon solar cells is presented. Ion implantation has been used to obtain nearly optimal values of surface dopant concentration. The concentrations are selected so as to minimize heavy doping effects and thereby provide both high blue response and high V sub oc ion implantation technique has been successfully applied to fabrication of both n-type and p-type emitters. V sub oc of up to 660 mV is reported and AMO efficiency of 16.1% has been obtained

Processing technology for high efficiency silicon solar cells

Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented

InP shallow-homojunction solar cells

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited

Local Environment of Ferromagnetically Ordered Mn in Epitaxial InMnAs

The magnetic properties of the ferromagnetic semiconductor In0.98Mn0.02As were characterized by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. The Mn exhibits an atomic-like L2,3 absorption spectrum that indicates that the 3d states are highly localized. In addition, a large dichroism at the Mn L2,3 edge was observed from 5-300 K at an applied field of 2T. A calculated spectrum assuming atomic Mn2+ yields the best agreement with the experimental InMnAs spectrum. A comparison of the dichroism spectra of MnAs and InMnAs show clear differences suggesting that the ferromagnetism observed in InMnAs is not due to hexagonal MnAs clusters. The temperature dependence of the dichroism indicates the presence of two ferromagnetic species, one with a transition temperature of 30 K and another with a transition temperature in excess of 300 K. The dichroism spectra are consistent with the assignment of the low temperature species to random substitutional Mn and the high temperature species to Mn near-neighbor pairs.Comment: 10 pages, 4 figures, accepted by Applied Physics Letter

The Breakdown of the Fingerprinting of Vortices by Hysteresis Loops in Circular Multilayer Ring Arrays

Microscale single-layer ferromagnetic rings typically exhibit a magnetic vortex state at remanence, characterized by a flux-closed magnetic state with zero stray fields. Magnetic reversal in such systems yields a vanishing remanent magnetization. In contrast, the authors show that in individual layers in thin rings, which alternate magnetic and nonmagnetic materials (NiFe/Cu/Co), layer-resolved hysteresis loops, measured using x-ray resonant magnetic scattering, exhibit the characteristics of a vortex formation, although photoelectron emission microscopy and micromagnetic simulations clearly prove that multidomain states are formed. This result is of considerable importance for the development of pseudo-spin-valve-type structures for applications

The Breakdown of the Fingerprinting of Vortices by Hysteresis Loops in Circular Multilayer Ring Arrays

Microscale single-layer ferromagnetic rings typically exhibit a magnetic vortex state at remanence, characterized by a flux-closed magnetic state with zero stray fields. Magnetic reversal in such systems yields a vanishing remanent magnetization. In contrast, the authors show that in individual layers in thin rings, which alternate magnetic and nonmagnetic materials (NiFe/Cu/Co), layer-resolved hysteresis loops, measured using x-ray resonant magnetic scattering, exhibit the characteristics of a vortex formation, although photoelectron emission microscopy and micromagnetic simulations clearly prove that multidomain states are formed. This result is of considerable importance for the development of pseudo-spin-valve-type structures for applications

Direct Imaging of Coexisting Ordered and Frustrated Sublattices in Artificial Ferromagnetic Quasicrystals

We have used scanning electron microscopy with polarization analysis and photoemission electron microscopy to image the two-dimensional magnetization of permalloy films patterned into Penrose P2 tilings (P2T). The interplay of exchange interactions in asymmetrically coordinated vertices and short-range dipole interactions among connected film segments stabilize magnetically ordered, spatially distinct sublattices that coexist with frustrated sublattices at room temperature. Numerical simulations that include long-range dipole interactions between sublattices agree with images of as-grown P2T samples and predict a magnetically ordered ground state for a two-dimensional quasicrystal lattice of classical Ising spins

Charge order in LuFe2O4: an unlikely route to ferroelectricity

We present the refinement of the crystal structure of charge-ordered LuFe2O4, based on single-crystal x-ray diffraction data. The arrangement of the different Fe-valence states, determined with bond-valence-sum analysis, corresponds to a stacking of charged Fe bilayers, in contrast to the polar bilayers previously suggested. This arrangement is supported by an analysis of x-ray magnetic circular dichroism spectra, which also evidences a strong charge-spin coupling. The non-polar bilayers are inconsistent with charge order based ferroelectricity.Comment: 5 pages, 3 figure

The mitochondrial DNA T16189C polymorphism and HIV-associated cardiomyopathy: a genotype-phenotype association study

<p>Abstract</p> <p>Background</p> <p>The mitochondrial DNA (mtDNA) T16189C polymorphism, with a homopolymeric C-tract of 10–12 cytosines, is a putative genetic risk factor for idiopathic dilated cardiomyopathy in the African and British populations. We hypothesized that this variant may predispose to dilated cardiomyopathy in people who are infected with the human immunodeficiency virus (HIV).</p> <p>Methods</p> <p>A case-control study of 30 HIV-positive cases with dilated cardiomyopathy and 37 HIV-positive controls without dilated cardiomyopathy was conducted. The study was confined to persons of black African ancestry to minimize confounding of results by population admixture. HIV-positive patients with an echocardiographically confirmed diagnosis of dilated cardiomyopathy and HIV-positive controls with echocardiographically normal hearts were studied. Patients with secondary causes of cardiomyopathy (such as hypertension, diabetes, pregnancy, alcoholism, valvular heart disease, and opportunistic infection) were excluded from the study. DNA samples were sequenced for the mtDNA T16189C polymorphism with a homopolymeric C-tract in the forward and reverse directions on an ABI3100 sequencer.</p> <p>Results</p> <p>The cases and controls were well matched for age (median 35 years versus 34 years, P = 0.93), gender (males 60% vs 53%, P = 0.54), and stage of HIV disease (mean CD4 T cell count 260.7/μL vs. 176/μL, P = 0.21). The mtDNA T16189C variant with a homopolymeric C-tract was detected at a frequency of 26.7% (8/30) in the HIV-associated cardiomyopathy cases and 13.5% (5/37) in the HIV-positive controls. There was no significant difference between cases and controls (Odds Ratio 2.33, 95% Confidence Interval 0.67–8.06, p = 0.11).</p> <p>Conclusion</p> <p>The mtDNA T16189C variant with a homopolymeric C-tract is not associated with dilated cardiomyopathy in black African people infected with HIV.</p