Nitrous oxide emissions from winter oilseed rape cultivation

Winter oilseed rape (Brassica napus L., WOSR) is the major oil crop cultivated in Europe. Rapeseed oil is predominantly used for production of biodiesel. The framework of the European Renewable Energy Directive requires that use of biofuels achieves GHG savings of at least 50% compared to use of fossil fuel starting in 2018. However, N2O field emissions are estimated using emission factors that are not specific for the crop and associated with strong uncertainty. N2O field emissions are controlled by N fertilization and dominate the GHG balance of WOSR cropping due to the high global warming potential of N2O. Thus, field experiments were conducted to increase the data basis and subsequently derive a new WOSR-specific emission factor. N2O emissions and crop yields were monitored for three years over a range of N fertilization intensities at five study sites representative of German WOSR production. N2O fluxes exhibited the typical high spatial and temporal variability in dependence on soil texture, weather and nitrogen availability. The annual N2O emissions ranged between 0.24 kg and 5.48 kg N2O-N ha−1 a−1. N fertilization increased N2O emissions, particularly with the highest N treatment (240 kg N ha−1). Oil yield increased up to a fertilizer amount of 120 kg N ha−1, higher N-doses increased grain yield but decreased oil concentrations in the seeds. Consequently oil yield remained constant at higher N fertilization. Since, yield-related emission also increased exponentially with N surpluses, there is potential for reduction of the N fertilizer rate, which offers perspectives for the mitigation of GHG emissions. Our measurements double the published data basis of annual N2O flux measurements in WOSR. Based on this extended dataset we modeled the relationship between N2O emissions and fertilizer N input using an exponential model. The corresponding new N2O emission factor was 0.6% of applied fertilizer N for a common N fertilizer amount under best management practice in WOSR production (200 kg N ha−1 a−1). This factor is substantially lower than the linear IPCC Tier 1 factor (EF1) of 1.0% and other models that have been proposed. © 201

Tomographisches Messverfahren für die Gasverteilung in einer Axialpumpe bei Zweiphasenbetrieb

Bei einer Vielzahl von natürlichen und technischen Strömungsvorgängen besteht das strömende Medium aus mehreren Phasen. Bei der Förderung derartiger Medien mit Kreiselpumpen führen bislang nicht genügend bekannte Vorgänge bei bestimmten Betriebsbedingungen zu einer starken Verringerung der Förderleistung und einem Anstieg des Leistungsbedarfs. Bei der Förderung von gasbeladenen Flüssigkeiten kann ein zu hoher Gasanteil zum vollständigen Zusammenbruch der Förderung führen. Zusätzlich führt die erosive Wirkung von Kavitation zu einer starken Minderung der Lebensdauer der Pumpe. Diese Arbeit beschreibt ein neuartiges Verfahren, das es erstmals gestattet, die Methode der Gamma-Tomographie zur Bestimmung der örtlichen Phasenverteilung innerhalb von rotierenden Pumpenläufern und ähnlichen Bauteilen anzuwenden. Dabei wird eine Zeitauflösung von ca. 100 µs erreicht, mit der die Gasverteilung wesentlich genauer als bisher erfaßt werden kann. Mit dem Tomographen wurden die Vorgänge innerhalb des Läufers einer Axialpumpe bei Förderung eines Luft-Wasser-Gemischs visualisiert. Es wird gezeigt, wie sich die Änderung äußerer Strömungsparameter und die Variation des Arbeitspunktes auf die räumliche Phasenverteilung innerhalb des Läufers auswirkt

Advances on MBE selective area growth of III-nitride nanostructures: from nanoLEDs to pseudo substrates

The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of (In)GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is eveloped on both GaN/sapphire templates and GaN-buffered Si(111). As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on nonpolar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) Inx Ga1-x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ∼220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices

Beiträge zum 28. Darmstädter Geotechnik-Kolloquium am 09. März 2022

Themenschwerpunkte: 1. Modell- und Feldversuche 2. Digitalisierung und künstliche Intelligenz in der Geotechnik 3. Nationale und internationale Großprojekte 4. Normung und Rechtliche

Beiträge zum 28. Darmstädter Geotechnik-Kolloquium am 09. März 2022

Themenschwerpunkte: 1. Modell- und Feldversuche 2. Digitalisierung und künstliche Intelligenz in der Geotechnik 3. Nationale und internationale Großprojekte 4. Normung und Rechtliche

Analytical Switching Loss Modelling based on Datasheet Parameters for MOSFETs in a Half-Bridge

Modern wide-bandgap devices, such as SiC- or GaN-based devices, feature significantly reduced switching losses, and the question arises if soft-switching operating modes are still beneficial. For most of the semiconductor devices, only limited information is available to estimate the switching losses. Especially, if a wide operating range is desired, excessive measurements have to be performed to determine the switching losses for arbitrary operating points. Therefore, in this paper, a fast calculation method to determine the switching losses based on the charge equivalent approximation of the MOSFET capacitances, relying only on datasheet parameters, is presented. In addition, the turn-OFF losses at high switching currents are investigated, and an analytical expression to estimate the maximum current range for which the MOSFET can be turned off with negligible switching losses is proposed.ISSN:0885-8993ISSN:1941-010