Scattering of Polarized Protons from 6,7-Li at 200 MeV

This work was supported by the National Science Foundation Grant NSF PHY 81-14339 and by Indiana Universit

Proton--induced deuteron breakup at GeV energies with forward emission of a fast proton pair

A study of the deuteron breakup reaction $pd \to (pp)n$ with forward emission of a fast proton pair with small excitation energy $E_{pp}<$ 3 MeV has been performed at the ANKE spectrometer at COSY--J\"ulich. An exclusive measurement was carried out at six proton--beam energies $T_p=$~0.6,~0.7,~0.8,~0.95,~1.35, and 1.9 GeV by reconstructing the momenta of the two protons. The differential cross section of the breakup reaction, averaged up to $8^{\circ}$ over the cm polar angle of the total momentum of the $pp$ pairs, has been obtained. Since the kinematics of this process is quite similar to that of backward elastic $pd \to dp$ scattering, the results are compared to calculations based on a theoretical model previously applied to the $pd \to dp$ process.Comment: 17 pages including 6 figures and 1 table v2: minor changes; v3: minor change of author list; v4: changes in accordance with referee remark

Current Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results

Total and differential cross sections of η-production in proton–deuteron fusion for excess energies between Qη = 13 MeV and Qη = 81 MeV

New data on both total and differential cross sections of the production of η mesons in proton–deuteron fusion to He3η in the excess energy region 13.6MeV≤Qη≤80.9MeV are presented. These data have been obtained with the WASA-at-COSY detector setup located at the Forschungszentrum Jülich, using a proton beam at 15 different beam momenta between pp=1.60GeV/c and pp=1.74GeV/c. While significant structure of the total cross section is observed in the energy region 20MeV≲Qη≲60MeV, a previously reported sharp variation around Qη≈50MeV cannot be confirmed. Angular distributions show the typical forward-peaking that was noted earlier. For the first time, it is possible to study the development of these angular distributions with rising excess energy over a wide interval

Results of Single-event Effects Measurements Conducted by the Jet Propulsion Laboratory

This paper reports recent single-event effects results for a variety of microelectronic devices that include an ADC, DAC, supervisory circuit, FIFO and a Viterbi decoder. The data was collected to evaluate these devices for possible use in NASA spacecraft

Results of Single-Event Latchup Measurements Conducted by the Jet Propulsion Laboratory

This paper reports recent single-event latchup (SEL) results for a variety of microelectronic devices that include OpAmp, Voltage Reference, Motor Controller, Switch Mode Controller, Resolver-to-Digital Converter and Analog-to-Digital Converter. The data was collected to evaluate these devices for possible use in NASA spacecraft

Frequency Dependence of Single-event Upset in Advanced Commerical PowerPC Microprocessors

This paper examines single-event upsets in advanced commercial SOI microprocessors in a dynamic mode, studying SEU sensitivity of General Purpose Registers (GPRs) with clock frequency. Results are presented for SOI processors with feature sizes of 0.18 microns and two different core voltages. Single-event upset from heavy ions is measured for advanced commercial microprocessors in a dynamic mode with clock frequency up to 1GHz. Frequency and core voltage dependence of single-event upsets in registers is discussed

Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories

Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena were investigated: single effect upsets (SEUs), single effect functional interrupts (SEFIs), and a new high current phenomenon which at high LETs results in catastrophic loss of ability to erase and program the device

Single-Event Transients in Voltage Regulators

Single-event transients are investigated for two voltage regulator circuits that are widely used in space. A circuit-level model is developed that can be used to determine how transients are affected by different circuit application conditions. Internal protection circuits-which are affected by load as well as internal thermal effects-can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. Although conventional output transients can be reduced by adding load capacitance, that approach is ineffective for dropouts from protection circuitry

Destructive events in NAND Flash memories irradiated with heavy ions

Besides being widely used in virtually all terrestrial applications requiring non-volatile storage, Flash memories are arousing increasing interest with regards to space applications. This work presents new original data on the occurrence of destructive events and supply current spikes in NAND Flash memories exposed to heavy ions. Interestingly enough, these phenomena occur irradiating the devices even in stand-by mode. We examined the dependence of these effects on Linear Energy Transfer (LET) and flux of impinging ions, we used different test protocols, and shielded different blocks of the memory. Our analysis shows that the permanent loss of functionality occurs only with high-LET ions and usually with high particle flux, originating from damage to the charge pumps, likely due to Single Event Gate Rupture. We also show that there is not necessarily a correlation between irreversible damage and supply current spikes, as previously believed, even though they both originate in the charge pump circuitry