Pentacene islands grown on ultra-thin SiO2

Ultra-thin oxide (UTO) films were grown on Si(111) in ultrahigh vacuum at room temperature and characterized by scanning tunneling microscopy. The ultra-thin oxide films were then used as substrates for room temperature growth of pentacene. The apparent height of the first layer is 1.57 +/- 0.05 nm, indicating standing up pentacene grains in the thin-film phase were formed. Pentacene is molecularly resolved in the second and subsequent molecular layers. The measured in-plane unit cell for the pentacene (001) plane (ab plane) is a=0.76+/-0.01 nm, b=0.59+/-0.01 nm, and gamma=87.5+/-0.4 degrees. The films are unperturbed by the UTO's short-range spatial variation in tunneling probability, and reduce its corresponding effective roughness and correlation exponent with increasing thickness. The pentacene surface morphology follows that of the UTO substrate, preserving step structure, the long range surface rms roughness of ~0.1 nm, and the structural correlation exponent of ~1.Comment: 15 pages, 4 figure

Diffusive Charge Transport in Graphene on SiO2

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the effects of charged impurities and short-range scatterers. The results show that charged impurities indeed lead to a conductivity linear in density in graphene, with a scattering magnitude that agrees quantitatively with theoretical estimates [1]; increased dielectric screening reduces scattering from charged impurities, but increases scattering from short-range scatterers [2]. We evaluate the effects of the corrugations (ripples) of graphene on SiO2 on transport by measuring the height-height correlation function. The results show that the corrugations cannot mimic long-range (charged impurity) scattering effects, and have too small an amplitude-to-wavelength ratio to significantly affect the observed mobility via short-range scattering [3, 4]. Temperature-dependent measurements show that longitudinal acoustic phonons in graphene produce a resistivity linear in temperature and independent of carrier density [5]; at higher temperatures, polar optical phonons of the SiO2 substrate give rise to an activated, carrier density-dependent resistivity [5]. Together the results paint a complete picture of charge carrier transport in graphene on SiO2 in the diffusive regime.Comment: 28 pages, 7 figures, submitted to Graphene Week proceeding

Using Co-solvability to Model and Exploit Synergetic Effects in Evolution

We introduce, analyze, and experimentally verify the concept of co-solvability, meant as the ability of a solution maintained by an evolutionary run to solve (correctly process) a pair of fitness cases (tests). The method based on this concept can be considered as a second-order implicit fitness sharing, where solutions compete for the rewards granted for solving pairs of tests, rather than single tests. We prove that co-solvability fitness function is by definition synergistic and imposes selection pressure which is qualitatively different from that induced by standard fitness function or implicit fitness sharing. The results of experimental verification on eight genetic programming tasks demonstrate that evolutionary runs driven by the proposed fitness function usually converge faster to global optima than other methods

Gravitational radiation from a particle in circular orbit around a black hole. V. Black-hole absorption and tail corrections

A particle of mass $\mu$ moves on a circular orbit of a nonrotating black hole of mass $M$. Under the restrictions $\mu/M \ll 1$ and $v \ll 1$, where $v$ is the orbital velocity, we consider the gravitational waves emitted by such a binary system. We calculate $\dot{E}$, the rate at which the gravitational waves remove energy from the system. The total energy loss is given by $\dot{E} = \dot{E}^\infty + \dot{E}^H$, where $\dot{E}^\infty$ denotes that part of the gravitational-wave energy which is carried off to infinity, while $\dot{E}^H$ denotes the part which is absorbed by the black hole. We show that the black-hole absorption is a small effect: $\dot{E}^H/\dot{E} \simeq v^8$. We also compare the wave generation formalism which derives from perturbation theory to the post-Newtonian formalism of Blanchet and Damour. Among other things we consider the corrections to the asymptotic gravitational-wave field which are due to wave-propagation (tail) effects.Comment: ReVTeX, 17 page