222 research outputs found
Pentacene islands grown on ultra-thin SiO2
Ultra-thin oxide (UTO) films were grown on Si(111) in ultrahigh vacuum at
room temperature and characterized by scanning tunneling microscopy. The
ultra-thin oxide films were then used as substrates for room temperature growth
of pentacene. The apparent height of the first layer is 1.57 +/- 0.05 nm,
indicating standing up pentacene grains in the thin-film phase were formed.
Pentacene is molecularly resolved in the second and subsequent molecular
layers. The measured in-plane unit cell for the pentacene (001) plane (ab
plane) is a=0.76+/-0.01 nm, b=0.59+/-0.01 nm, and gamma=87.5+/-0.4 degrees. The
films are unperturbed by the UTO's short-range spatial variation in tunneling
probability, and reduce its corresponding effective roughness and correlation
exponent with increasing thickness. The pentacene surface morphology follows
that of the UTO substrate, preserving step structure, the long range surface
rms roughness of ~0.1 nm, and the structural correlation exponent of ~1.Comment: 15 pages, 4 figure
Diffusive Charge Transport in Graphene on SiO2
We review our recent work on the physical mechanisms limiting the mobility of
graphene on SiO2. We have used intentional addition of charged scattering
impurities and systematic variation of the dielectric environment to
differentiate the effects of charged impurities and short-range scatterers. The
results show that charged impurities indeed lead to a conductivity linear in
density in graphene, with a scattering magnitude that agrees quantitatively
with theoretical estimates [1]; increased dielectric screening reduces
scattering from charged impurities, but increases scattering from short-range
scatterers [2]. We evaluate the effects of the corrugations (ripples) of
graphene on SiO2 on transport by measuring the height-height correlation
function. The results show that the corrugations cannot mimic long-range
(charged impurity) scattering effects, and have too small an
amplitude-to-wavelength ratio to significantly affect the observed mobility via
short-range scattering [3, 4]. Temperature-dependent measurements show that
longitudinal acoustic phonons in graphene produce a resistivity linear in
temperature and independent of carrier density [5]; at higher temperatures,
polar optical phonons of the SiO2 substrate give rise to an activated, carrier
density-dependent resistivity [5]. Together the results paint a complete
picture of charge carrier transport in graphene on SiO2 in the diffusive
regime.Comment: 28 pages, 7 figures, submitted to Graphene Week proceeding
Delivering distance education on plant genetic resources: an evaluation of the collaborative association between CIAT, Bioversity International, UNC and REDCAPA on conducting a distance-education course on the ex situ conservation of plant genetic resources
Using Co-solvability to Model and Exploit Synergetic Effects in Evolution
We introduce, analyze, and experimentally verify the concept of co-solvability, meant as the ability of a solution maintained by an evolutionary run to solve (correctly process) a pair of fitness cases (tests). The method based on this concept can be considered as a second-order implicit fitness sharing, where solutions compete for the rewards granted for solving pairs of tests, rather than single tests. We prove that co-solvability fitness function is by definition synergistic and imposes selection pressure which is qualitatively different from that induced by standard fitness function or implicit fitness sharing. The results of experimental verification on eight genetic programming tasks demonstrate that evolutionary runs driven by the proposed fitness function usually converge faster to global optima than other methods
Gravitational radiation from a particle in circular orbit around a black hole. V. Black-hole absorption and tail corrections
A particle of mass moves on a circular orbit of a nonrotating black
hole of mass . Under the restrictions and , where
is the orbital velocity, we consider the gravitational waves emitted by such a
binary system. We calculate , the rate at which the gravitational
waves remove energy from the system. The total energy loss is given by , where denotes that part of the
gravitational-wave energy which is carried off to infinity, while
denotes the part which is absorbed by the black hole. We show that the
black-hole absorption is a small effect: . We
also compare the wave generation formalism which derives from perturbation
theory to the post-Newtonian formalism of Blanchet and Damour. Among other
things we consider the corrections to the asymptotic gravitational-wave field
which are due to wave-propagation (tail) effects.Comment: ReVTeX, 17 page
Bounding the Vapnik-Chervonenkis dimension of concept classes parameterized by real numbers
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