3,854 research outputs found
Ways of interpreting urban regeneration: Hamburg, London, Brussels and Rome
Over the coming decades all cities throughout and beyond Europe, be they large or small, will face the great challenge of regeneration. European Commission has promoted a “regeneration agenda” focused on an integrated sustainable approach. But, while the European Commission draws the path, European cities provide a variety of ways to transform drafts in deeds.
The four case studies described below – Hamburg, London, Brussels, Rome – give evidence that, in the last decades, every city had drawn its own “regeneration way”, with a different level of sensitiveness regarding the European principles.
However, all the case studies deliver at least one action attuned to the principles of a sustainable regeneration, and it’s possible to select from every experience the “good” that has been realized
Is the Quantum Melting of a Polaron Wigner Crystal an Insulator-to-Superconductor transition ?
On examining the stability of a Wigner Crystal (WC) in an ionic dielectric,
two competitive effects due to Polaron formation are found to be important: (i)
the screening of the Coulomb forces which destabilizes the crystal, compensated
by (ii) the increase of the carrier mass (polaron mass). The quantum melting of
the Polaron Wigner Crystal (PWC) is examined. By calculating the quantum
fluctuations of both the electrons and the polarization, we show that there is
a competition between the dissociation of the Polarons at the
insulator-to-metal transition (IMT), and a melting towards a polaron liquid. We
find that at strong coupling (), a liquid state of polarons
cannot exist, and the IMT is driven by polaron dissociation. Next, we show that
the dipolar interactions between localized polarons are responsible for a
phonon instability of the PWC as the density increases. This provides a new
mechanism for the IMT in doped dielectrics. Examining the sign of the
dielectric constant of the PWC, we conjecture that such an instability could
yield an Insulator-to-Superconductor transition.Comment: 4 Pages, 2 Figures included, Int. Conf. M2S-HTSC-VI (Houston 2000) to
be published in Physica
Band dispersion and electronic lifetimes in crystalline organic semiconductors
The consequences of several microscopic interactions on the photoemission
spectra of crystalline organic semiconductors (OSC) are studied theoretically.
It is argued that their relative roles can be disentangled by analyzing both
their temperature and their momentum/energy dependence. Our analysis shows that
the polaronic thermal band narrowing, that is the foundation of most theories
of electrical transport in OSC, is inconsistent in the range of microscopic
parameters appropriate for these materials. An alternative scenario is proposed
to explain the experimental trends.Comment: 4+ pages, revised conclusions; accepted for publication in Phys. Rev.
Let
On dynamical localization corrections to band transport
Bloch-Boltzmann transport theory fails to describe the carrier diffusion in
current crystalline organic semiconductors, where the presence of
large-amplitude thermal molecular motions causes substantial dynamical
disorder. The charge transport mechanism in this original situation is now
understood in terms of a transient localization of the carriers' wavefunctions,
whose applicability is however limited to the strong disorder regime. In order
to deal with the ever-improving performances of new materials, we develop here
a unified theoretical framework that includes transient localization theory as
a limiting case, and smoothly connects with the standard band description when
molecular disorder is weak. The theory, which specifically adresses the
emergence of dynamical localization corrections to semiclassical transport, is
used to determine a "transport phase diagram" of high-mobility organic
semiconductors.Comment: 14 pages, 6 figures completely revised versio
Pairing and condensation in a resonant Bose-Fermi mixture
We study by diagrammatic methods a mixture of single-component bosons and
fermions, with boson-fermion coupling tuned by a Fano-Feshbach resonance. For
increasing coupling, the growing boson-fermion pairing correlations
progressively reduce the boson condensation temperature and make it eventually
vanish at a critical coupling. Such quantum critical point depends very weakly
on the population imbalance and for vanishing boson densities coincides with
that found for the polaron-molecule transition in a strongly imbalanced Fermi
gas, thus bridging two quite distinct physical systems.Comment: 4 pages, 4 figure
Hopping dynamics of interacting polarons
We derive an effective cluster model to address the transport properties of
mutually interacting small polarons. We propose a decoupling scheme where the
hopping dynamics of any given particle is determined by separating out
explicitly the degrees of freedom of its environment, which are treated as a
statistical bath. The general cavity method developed here shows that the
long-range Coulomb repulsion between the carriers leads to a net increase of
the thermal activation barrier for electrical transport, and hence to a sizable
reduction of the carrier mobility. A mean-field calculation of this effect is
provided, based on the known correlation functions of the interacting liquid in
two and three dimensions. The present theory gives a natural explanation of
recent experiments performed in organic field-effect transistors with highly
polarizable gate dielectrics, and might well find application in other classes
of polaronic systems such as doped transition-metal oxides
Electronic transport and quantum localization effects in organic semiconductors
We explore the charge transport mechanism in organic semiconductors based on
a model that accounts for the thermal intermolecular disorder at work in pure
crystalline compounds, as well as extrinsic sources of disorder that are
present in current experimental devices. Starting from the Kubo formula, we
develop a theoretical framework that relates the time-dependent quantum
dynamics of electrons to the frequency-dependent conductivity. The electron
mobility is then calculated through a relaxation time approximation that
accounts for quantum localization corrections beyond Boltzmann theory, and
allows us to efficiently address the interplay between highly conducting states
in the band range and localized states induced by disorder in the band tails.
The emergence of a "transient localization" phenomenon is shown to be a general
feature of organic semiconductors, that is compatible with the bandlike
temperature dependence of the mobility observed in pure compounds. Carrier
trapping by extrinsic disorder causes a crossover to a thermally activated
behavior at low temperature, which is progressively suppressed upon increasing
the carrier concentration, as is commonly observed in organic field-effect
transistors. Our results establish a direct connection between the localization
of the electronic states and their conductive properties, formalizing
phenomenological considerations that are commonly used in the literature
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