154 research outputs found

    Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition

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    The band structure and dependences of the intrinsic concentration in the mercury-cadmium-telluride (MCT) Hg₀.₃₂Cd₀.₆₈Te/Hg₀ Cd₀ Te/Hg₀.₃₂Cd₀.₆₈Te quantum wells in the framework of the 8x8 k.p envelope function method on the well width L and composition x were calculated. Modeling of the energy spectra showed that the intrinsic concentration can vary about an order of magnitude with variation of the well width and chemical composition in the range of x < 0.16 and well width L < 20 nm at the liquid nitrogen temperature. These strong variations of the carrier concentration are caused by the insulator-semimetal topological transition

    Determination of the Form Factors for the Decay B0 --> D*-l+nu_l and of the CKM Matrix Element |Vcb|

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    We present a combined measurement of the Cabibbo-Kobayashi-Maskawa matrix element Vcb|V_{cb}| and of the parameters ρ2\rho^2, R1R_1, and R2R_2, which fully characterize the form factors of the B0D+νB^0 \to D^{*-}\ell^{+}\nu_\ell decay in the framework of HQET, based on a sample of about 52,800 B0D+νB^0 \to D^{*-}\ell^{+}\nu_\ell decays recorded by the BABAR detector. The kinematical information of the fully reconstructed decay is used to extract the following values for the parameters (where the first errors are statistical and the second systematic): ρ2=1.156±0.094±0.028\rho^2 = 1.156 \pm 0.094 \pm 0.028, R1=1.329±0.131±0.044R_1 = 1.329 \pm 0.131 \pm 0.044, R2=0.859±0.077±0.022R_2 = 0.859 \pm 0.077 \pm 0.022, F(1)Vcb=(35.03±0.39±1.15)×103\mathcal{F}(1)|V_{cb}| = (35.03 \pm 0.39 \pm 1.15) \times 10^{-3}. By combining these measurements with the previous BABAR measurements of the form factors which employs a different technique on a partial sample of the data, we improve the statistical accuracy of the measurement, obtaining: ρ2=1.179±0.048±0.028,R1=1.417±0.061±0.044,R2=0.836±0.037±0.022,\rho^2 = 1.179 \pm 0.048 \pm 0.028, R_1 = 1.417 \pm 0.061 \pm 0.044, R_2 = 0.836 \pm 0.037 \pm 0.022, and F(1)Vcb=(34.68±0.32±1.15)×103. \mathcal{F}(1)|V_{cb}| = (34.68 \pm 0.32 \pm 1.15) \times 10^{-3}. Using the lattice calculations for the axial form factor F(1)\mathcal{F}(1), we extract Vcb=(37.74±0.35±1.25±1.441.23)×103|V_{cb}| =(37.74 \pm 0.35 \pm 1.25 \pm ^{1.23}_{1.44}) \times 10^{-3}, where the third error is due to the uncertainty in F(1)\mathcal{F}(1)

    Study of the Exclusive Initial-State Radiation Production of the DDˉD \bar D System

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    A study of exclusive production of the DDˉD \bar D system through initial-state r adiation is performed in a search for charmonium states, where D=D0D=D^0 or D+D^+. The D0D^0 mesons are reconstructed in the D0Kπ+D^0 \to K^- \pi^+, D0Kπ+π0D^0 \to K^- \pi^+ \pi^0, and D0Kπ+π+πD^0 \to K^- \pi^+ \pi^+ \pi^- decay modes. The D+D^+ is reconstructed through the D+Kπ+π+D^+ \to K^- \pi^+ \pi^+ decay mode. The analysis makes use of an integrated luminosity of 288.5 fb1^{-1} collected by the BaBar experiment. The DDˉD \bar D mass spectrum shows a clear ψ(3770)\psi(3770) signal. Further structures appear in the 3.9 and 4.1 GeV/c2c^2 regions. No evidence is found for Y(4260) decays to DDˉD \bar D, implying an up per limit \frac{\BR(Y(4260)\to D \bar D)}{\BR(Y(4260)\to J/\psi \pi^+ \pi^-)} < 7.6 (95 % confidence level)

    EuFe2_2As2_2 under high pressure: an antiferromagnetic bulk superconductor

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    We report the ac magnetic susceptibility χac\chi_{ac} and resistivity ρ\rho measurements of EuFe2_2As2_2 under high pressure PP. By observing nearly 100% superconducting shielding and zero resistivity at PP = 28 kbar, we establish that PP-induced superconductivity occurs at TcT_c \sim~30 K in EuFe2_2As2_2. ρ\rho shows an anomalous nearly linear temperature dependence from room temperature down to TcT_c at the same PP. χac\chi_{ac} indicates that an antiferromagnetic order of Eu2+^{2+} moments with TNT_N \sim~20 K persists in the superconducting phase. The temperature dependence of the upper critical field is also determined.Comment: To appear in J. Phys. Soc. Jpn., Vol. 78 No.

    Measurements of Branching Fractions, Polarizations, and Direct CP-Violation Asymmetries in B→ρK∗ and B→f0(980)K∗ Decays

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    We report searches for B -meson decays to the charmless final states ρ K ∗ and f 0 ( 980 ) K ∗ with a sample of 232 × 10 6 B ¯¯¯ B pairs collected with the BABAR detector at the PEP-II e + e − collider. We measure in units of 10 − 6 the following branching fractions, where the first error quoted is statistical and the second systematic, or upper limits are given at the 90% confidence level : B ( B + → ρ 0 K * + ) < 6.1 , B ( B + → ρ + K * 0 ) = 9.6 ± 1.7 ± 1.5 , B ( B 0 → ρ − K * + ) < 12.0 , B ( B 0 → ρ 0 K * 0 ) = 5.6 ± 0.9 ± 1.3 , B ( B + → f 0 ( 980 ) K * + ) = 5.2 ± 1.2 ± 0.5 , and B ( B 0 → f 0 ( 980 ) K * 0 ) < 4.3 . For the significant modes, we also measure the fraction of longitudinal polarization and the charge asymmetry: f L ( B + → ρ + K * 0 ) = 0.52 ± 0.10 ± 0.04 , f L ( B 0 → ρ 0 K * 0 ) = 0.57 ± 0.09 ± 0.08 , A C P ( B + → ρ + K * 0 ) = − 0.01 ± 0.16 ± 0.02 , A C P ( B 0 → ρ 0 K * 0 ) = 0.09 ± 0.19 ± 0.02 , and A C P ( B + → f 0 ( 980 ) K * + ) = − 0.34 ± 0.21 ± 0.03

    Search for decays of B-0 -> e(+)e(-), B-0 -> mu(+)mu(-), B-0 -> e(+/-)mu(-/+)

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    We present a search for the decays B-0 -> e(+)e(-), B-0 ->mu(+)mu(-), and B-0 -> e(+/-)mu(-/+) in data collected at the Upsilon(4S) resonance with the BABAR detector at the SLAC B Factory. Using a data set of 111 fb(-1), we find no evidence for a signal in any of the three channels investigated and set the following branching fraction upper limits at the 90% confidence level: B(B-0 -> e(+)e(-))mu(+)mu(-)) e(+/-)mu(-/+))< 18x10(-8)

    The Physics of the B Factories

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    Observation of three-dimensional massless Kane fermions in a zinc-blende crystal

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    http://arxiv.org/abs/1310.0969 The authors acknowledge helpful discussions with T. Brauner, R. Grill, M. Grynberg, A. A. Nersesyan, V. Novák, M. L. Sadowski and W. Zawadzki. The work has been supported by the ERC project MOMB, by EuroMagNET II under the EU Contract No. 228043, by the GDR-I project 'Semiconductor sources and detectors of THz frequencies' and by the Scientific Council of Montpellier II University. We also acknowledge the support received from the Ambassade de France en Russie for the French-Russian collaboration and exchange of PhD students.International audienceSolid-state physics and quantum electrodynamics, with its ultrarelativistic (massless) particles, meet in the electronic properties of one-dimensional carbon nanotubes, two-dimensional graphene or topological-insulator surfaces. However, clear experimental evidence for electronic states with a conical dispersion relation in all three dimensions, conceivable for certain bulk materials, is still missing. Here, we study a zinc-blende crystal, HgCdTe, at the point of the semiconductor-to-semimetal topological transition. For this compound, we observe three-dimensional massless electrons, as certified from the dynamical conductivity increasing linearly with the photon frequency, with a velocity of about 106 m s−1. Applying a magnetic field B results in a -dependence of dipole-active inter-Landau-level resonances and spin splitting of Landau levels also following a -dependence--well-established signatures of ultrarelativistic particles but until now not observed experimentally in any solid-state electronic system
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