Controlling front-end electronics boards using commercial solutions

LHCb is a dedicated B-physics experiment under construction at CERN's large hadron collider (LHC) accelerator. This paper will describe the novel approach LHCb is taking toward controlling and monitoring of electronics boards. Instead of using the bus in a crate to exercise control over the boards, we use credit-card sized personal computers (CCPCs) connected via Ethernet to cheap control PCs. The CCPCs will provide a simple parallel, I2C, and JTAG buses toward the electronics board. Each board will be equipped with a CCPC and, hence, will be completely independently controlled. The advantages of this scheme versus the traditional bus-based scheme will be described. Also, the integration of the controls of the electronics boards into a commercial supervisory control and data acquisition (SCADA) system will be shown. (5 refs)

Planck pre-launch status : The Planck mission

Peer reviewe

Etudes des désintégrations de mésons beaux avec photons convertis dans l'expérience LHCbLHC_b

The LHCb experiment studies CP violation in B meson decays and will take data in 2007. Analysis strategy are studied on simulations. In this development, I worked on many fields, and essentially in: - converted photons reconstruction: the charge deposited by electrons and positrons produced by converted photons can be seen and allow to detect them. The low rate of conversion is of course to consider and the use of converted photons is advantageous only because of their good momentum measurements. - decay channels with converted photon selection: the good momentum resolution allows to select different channels, among which: B0 -> K* gamma, B0 -> pi- pi+ pi0 and B0 -> pi0 pi0. Despite low branching ratios, I show that these modes can be studied. The classical method with photons detected by the electromagnetical calorimeter being difficult, the use of converted photons will be an advantage for LHCb

Thallium incorporation into GaAs(001) grown by solid source MBE: critical thickness and stability under annealing

International audienc

Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect

International audienceThe reduction of the contact resistance RC is one of the most challenging issues related to the miniaturisation of advanced MOSFET architectures,including FDSOI technology (Fully Depleted Silicon-On-Insulator). RC strongly depends on the active dopant concentration at the semiconductor/salicide interface. It is therefore essential that electrical activation at different depths within a doped layer is reliably determined tooptimise the fabrication processes. In this paper, we firstly present a Differential Hall Effect (DHE) method which allows measuring the active dopant concentration profile close to the surface with nm resolution for ultra-shallow doped Si1-xGex and Si layers. Then, we present DHE measurements made on junctions processed with advanced techniques, including nsec LTA and msec DSA anneals

A Differential Hall Effect method with sub-nanometre resolution for active dopant concentration profiling in ultra-thin Si 1-x Ge x and Si doped layers

In this paper, we present an enhanced Differential Hall Effect method (DHE) for Si and SiGe ultrathin layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe case, which constitutes the most challenging process, we show the reliability of the SC1 chemical solution (NH4OH:H2O2:H2O) thanks to its slow etch rate, stoichiometry conservation and low roughness generation. The reliability of a complete DHE procedure, with an etching step as small as 0.5 nm, is demonstrated on a dedicated 20 nm-thick SiGe teststructure fabricated by CVD and uniformly doped in situ during growth. The developed method is finally applied to the investigation of dopant activation achieved by advanced annealing methods (including millisecond and nanosecond laser anneal) in two material systems: 6 nm-thick SiGeOI and 11 nm-thick SOI. In both cases, DHE is shown to be a unique sensitive characterisation technique for a detailed investigation of dopant activation in ultra-shallow layers, providing sub-nm resolution for both dopant concentration and carrier mobility depth profiles

Origin of local temperature variation during spike anneal and millisecond anneal

International audienc

Simulation of the sub-melt laser anneal process in 45 CMOS technology: Application to the thermal pattern effects

International audienc