2,054 research outputs found
Dirac states with knobs on: interplay of external parameters and the surface electronic properties of 3D topological insulators
Topological insulators are a novel materials platform with high applications
potential in fields ranging from spintronics to quantum computation. In the
ongoing scientific effort to demonstrate controlled manipulation of their
electronic structure by external means, stoichiometric variation and surface
decoration are two effective approaches that have been followed. In ARPES
experiments, both approaches are seen to lead to electronic band structure
changes. Such approaches result in variations of the energy position of bulk
and surface-related features and the creation of two-dimensional electron
gases.The data presented here demonstrate that a third manipulation handle is
accessible by utilizing the amount of illumination a topological insulator
surface has been exposed to under typical experimental ARPES conditions. Our
results show that this new, third, knob acts on an equal footing with
stoichiometry and surface decoration as a modifier of the electronic band
structure, and that it is in continuous competition with the latter. The data
clearly point towards surface photovoltage and photo-induced desorption as the
physical phenomena behind modifications of the electronic band structure under
exposure to high-flux photons. We show that the interplay of these phenomena
can minimize and even eliminate the adsorbate-related surface band bending on
typical binary, ternary and quaternary Bi-based topological insulators.
Including the influence of the sample temperature, these data set up a
framework for the external control of the electronic band structure in
topological insulator compounds in an ARPES setting. Four external knobs are
available: bulk stoichiometry, surface decoration, temperature and photon
exposure. These knobs can be used in conjunction to tune the band energies near
the surface and consequently influence the topological properties of the
relevant electronic states.Comment: 16 pages, 8 figure
On-Surface Formation of Cumulene by Dehalogenative Homocoupling of Alkenyl gem-Dibromides
The on-surface activation of carbon-halogen groups is an efficient route to produce radicals for constructing various hydrocarbons and carbon nanostructures. To date, the employed halide precursors have only one halogen attached to a carbon atom. It is thus of interest to study the effect of attaching more than one halogen atom to a carbon atom with the aim of producing multiple unpaired electrons. By introducing an alkenyl gem-dibromide, cumulene products were fabricated on a Au(111) surface by dehalogenative homocoupling reactions. The reaction products and pathways were unambiguously characterized by a combination of high-resolution scanning tunneling microscopy and non-contact atomic force microscopy measurements together with density functional calculations. This study further supplements the database of on-surface synthesis strategies and provides a facile manner for incorporation of more complicated carbon scaffolds into surface nanostructures
First Operational Experience from the LHCb Silicon Tracker
The LHCb Silicon Tracker is a silicon micro-strip detector covering a sensitive area of 12 m2 with a total of 272k readout channels. The installation of the detector is complete and commissioning is making excellent progress. The detector has recorded first beam-induced events during LHC synchronization tests in August 2008 and in June 2009. These events have allowed the performance to be studied, and adjustments to the operational parameters to be made. In this contribution, we will draw first lessons from the in-situ commissioning of the Silicon Tracker, and present results from the reconstruction of data collected during the LHC synchronization tests
Performance of the LHCb Silicon Tracker with first data
The LHCb Silicon Tracker consists of two sub-detectors the Tracker Turicensis and Inner Tracker that are constructed from silicon microstrip technology. Performance studies of both sub-detectors using data taken during the LHC synchronization tests are described
Commissioning of the LHCb Silicon Tracker using data from the LHC injection tests
LHCb is a single-arm forward spectrometer dedicated to the study of the CP-violation and rare decays in the b-quark sector. An efficient and high precision tracking system is a key requirement of the experiment. The LHCb Silicon Tracker Project consists of two sub-detectors that make use of silicon micro-strip technology: the Tracker Turicensis located upstream of the spectrometer magnet and the Inner Tracker which covers the innermost part of the tracking stations after the magnet. In total an area of 12 m^2 is covered by silicon. In September 2008 and June 2009, injection tests from the SPS to the LHC were performed. Bunches of order 5x10^9 protons were dumped onto a beam stopper (TED) located upstream of LHCb. This produced a spray of ~10 GeV muons in the LHCb detector. Though the occupancy in this environment is relatively large, these TED runs have allowed a first space and time alignment of the tracking system. Results of these studies together and the overall detector performance obtained in the TED running will be discussed
Measurement of the CKM angle Îł from a combination of B±âDh± analyses
A combination of three LHCb measurements of the CKM angle Îł is presented. The decays B±âD K± and
B±âDϱ are used, where D denotes an admixture of D0 and D0 mesons, decaying into K+Kâ, Ï+Ïâ, K±Ïâ, K±ÏâϱÏâ, K0SÏ+Ïâ, or K0S K+Kâ ïŹnal states. All measurements use a dataset corresponding to 1.0 fbâ1 of integrated luminosity. Combining results from B±âD K± decays alone a best-ïŹt value of
Îł =72.0⊠is found, and conïŹdence intervals are set
Îł â [56.4,86.7]⊠at 68% CL,
Îł â [42.6,99.6]⊠at 95% CL.
The best-ïŹt value of Îł found from a combination of results from B±âDϱ decays alone, is Îł =18.9âŠ,
and the conïŹdence intervals
Îł â [7.4,99.2]⊠âȘ [167.9,176.4]⊠at 68% CL
are set, without constraint at 95% CL. The combination of results from B± â D K± and B± â Dϱ
decays gives a best-ïŹt value of Îł =72.6⊠and the conïŹdence intervals
Îł â [55.4,82.3]⊠at 68% CL,
Îł â [40.2,92.7]⊠at 95% CL
are set. All values are expressed modulo 180âŠ, and are obtained taking into account the effect of D0âD0
mixing
Measurement of the ratio of branching fractions BR(B0 -> K*0 gamma)/BR(Bs0 -> phi gamma)
The ratio of branching fractions of the radiative B decays B0 -> K*0 gamma
and Bs0 -> phi gamma has been measured using 0.37 fb-1 of pp collisions at a
centre of mass energy of sqrt(s) = 7 TeV, collected by the LHCb experiment. The
value obtained is BR(B0 -> K*0 gamma)/BR(Bs0 -> phi gamma) = 1.12 +/- 0.08
^{+0.06}_{-0.04} ^{+0.09}_{-0.08}, where the first uncertainty is statistical,
the second systematic and the third is associated to the ratio of fragmentation
fractions fs/fd. Using the world average for BR(B0 -> K*0 gamma) = (4.33 +/-
0.15) x 10^{-5}, the branching fraction BR(Bs0 -> phi gamma) is measured to be
(3.9 +/- 0.5) x 10^{-5}, which is the most precise measurement to date.Comment: 15 pages, 1 figure, 2 table
Differential branching fraction and angular analysis of the decay B0âKâ0ÎŒ+ÎŒâ
The angular distribution and differential branching fraction of the decay B 0â K â0 ÎŒ + ÎŒ â are studied using a data sample, collected by the LHCb experiment in pp collisions at sâ=7 TeV, corresponding to an integrated luminosity of 1.0 fbâ1. Several angular observables are measured in bins of the dimuon invariant mass squared, q 2. A first measurement of the zero-crossing point of the forward-backward asymmetry of the dimuon system is also presented. The zero-crossing point is measured to be q20=4.9±0.9GeV2/c4 , where the uncertainty is the sum of statistical and systematic uncertainties. The results are consistent with the Standard Model predictions
Production, Commissioning and First Data of the LHCb Silicon Tracker
We give here a short review of the LHCb Silicon Tracker, the main points of the module production and quality control, followed by the commissioning of the detector. Problems that were found during production or commissioning are described and the first performance assessment of the installed detector with âbeam dataâ is given
Measurements of the branching fractions of B+âppK+ decays
The branching fractions of the decay B+ â ppÌK+ for different intermediate states are measured using data, corresponding to an integrated luminosity of 1.0 fb-1, collected by the LHCb experiment. The total branching fraction, its charmless component MppÌ < 2.85 GeV/c2 and the branching fractions via the resonant ccÌ states η c(1S) and Ï(2S) relative to the decay via a J/Ï intermediate state are [Equation not available: see fulltext.] Upper limits on the B + branching fractions into the η c(2S) meson and into the charmonium-like states X(3872) and X(3915) are also obtained
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