301 research outputs found

    Tourism development and economic growth : a comparative study for the G-6 leaders

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    Purpose: The paper investigates the relationship between tourism development and economic growth for the six richest countries globally for the period 1995-2017 by estimating a simultaneous system equations model. The purpose of this paper is to examine the long-run relationship between these variables by the use of the two-stage least squared methodology. Design/Methodology/Approach: A structural system equation model is estimated for the G-6 leader countries and then we apply a Monte Carlo simulation method, in order to find out the predictive ability of the equation model. Findings: The results of this study indicated that there is a positive relationship between tourism development and economic growth taking into account the negative effect of interest rates and the positive effect of investments, trade openness, and consumption on economic growth. Practical Implications: The group of six leader countries is a group consisting of Canada, France, Germany, Italy, United Kingdom, and USA regarded as the most industrialized countries in the world. Originality/Value: The study offers an in-depth insight into econometric modelling of economic growth.peer-reviewe

    Right Ventricular Failure Following Left Ventricular Assist Device Implant: An Intermacs Analysis

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    Purpose: Right heart failure (RHF) management following LVAD include inotropes, right ventricular mechanical support and heart transplant. We analyzed the outcomes of severe RHF following implant of a fully magnetically levitated or hybrid magnetic centrifugal durable LVAD. Methods: In this INTERMACS analysis we identified patients who developed severe RHF following LVAD from 2013 until 2020 as bridge to recovery or transplant. Patients were categorized in three groups based on RHF treatment strategy: inotrope support (group 1), temporary mechanical support (group 2), and durable centrifugal RVAD (group 3). Kaplan Meier and Cox-regression survival analysis between groups was undertaken. Logistic regression analysis for new onset dialysis was conducted. Results: 2509 patients developed severe RHF after LVAD. 2199 (87.6%) patients were managed with inotropes (group 1), 233 (9.3%) with temporary RVAD (group 2) and 77 (3.1%) with durable RVAD (group 3). Group 1 had fewer patients with INTERMACS profile 1 and 2 (21.6%, p\u3c0.001). One year survival was 84.6%, 59.3%, and 63.8% in groups 1,2, and 3 (mortality HR=2.4 and 3.3 for groups 2 and 3 vs. group 1, p\u3c0.05). One year survival to transplant was 27%, 36.5%, and 53.6% in groups 1, 2, and 3, respectively (p\u3c0.05). Group 2 had higher incidence of new onset dialysis (42.6%, p=0.049). Conclusion: Survival with RHF following LVAD implant varies based on treatment strategy; inotrope support is associated with increased survival. Patients with durable RVAD are more likely to survive to transplant. Patient selection studies for durable RVAD with contraindications for transplant are necessary

    Gravitational Influence on Human Living Systems and the Evolution of Species on Earth

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    Gravity constituted the only constant environmental parameter, during the evolutionary period of living matter on Earth. However, whether gravity has affected the evolution of species, and its impact is still ongoing. The topic has not been investigated in depth, as this would require frequent and long-term experimentations in space or an environment of altered gravity. In addition, each organism should be studied throughout numerous generations to determine the profound biological changes in evolution. Here, we review the significant abnormalities presented in the cardiovascular, immune, vestibular and musculoskeletal systems, due to altered gravity conditions. We also review the impact that gravity played in the anatomy of snakes and amphibians, during their evolution. Overall, it appears that gravity does not only curve the space–time continuum but the biological continuum, as well

    Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in air

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    Silicon dioxide (SiO2) is the most widely used dielectric for electronic applications. It is usually produced by thermal oxidation of silicon or by using a wide range of vacuum-based techniques. By default, the growth of SiO2 by thermal oxidation of silicon, requires the use of Si substrates whereas the other deposition techniques either produce low quality or poor interface material and mostly require high deposition or annealing temperatures. Recent investigations therefore have focused on the development of alternative deposition paradigms based on solutions. Here, we report the deposition of SiO2 thin film dielectrics deposited by spray pyrolysis in air at moderate temperatures of 350 oC from pentane-2,4-dione solutions of SiCl4. SiO2 dielectrics were investigated by means of UV–Vis absorption spectroscopy, spectroscopic ellipsometry, XPS, XRD, UFM/AFM, admittance spectroscopy, and field-effect measurements. Data analysis reveals smooth (RRMS<1 nm) amorphous films with a dielectric constant of about 3.8, an optical band gap of ≈8.1 eV, leakage current densities in the order of ≈10-7 A/cm2 at 1 MV/cm and high dielectric strength in excess of 5 MV/cm. XPS measurements confirm the SiO2 stoichiometry and FTIR spectra reveal features related to SiO2 only. Thin film transistors implementing spray coated SiO2 gate dielectrics and C60 and pentacene semiconducting channels exhibit excellent transport characteristics i.e. negligible hysteresis, low leakage currents, high on/off current modulation ratio in the order of 106 and high carrier mobility

    Chaos and magnetospheric dynamics

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    International audienceOur intention in this work is to show, by using two different methods, that magnetospheric dynamics reveal low dimensional chaos. In the first method we extend the chaotic analysis for the AE index time series by including singular value decomposition (SVD) analysis in combination with Theiler's test in order to discriminate dynamical chaos from self-affinity or "crinkliness". The estimated fractality of the AE index time series which is obtained belongs to a strange attractor structure with close returns in the reconstructed phase space. In the second method we extend the linear equivalent magnetospheric electric circuit to a nonlinear one, the arithmetic solution of which reveals low dimensional chaotic dynamics. Both methods strongly support the existence of low dimensional magnetospheric chaos

    Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress

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    We have investigated solution-processed tungsten-doped crystalline indium oxide (In2O3:W) as a function of the W content and their implementation in TFTs also employing spray coated Y2O3 gate dielectrics, and gold source and drain contacts. We showed that tungsten doping practically has no effect on the optical band gap whereas it shifts up the Urbach tail energy of In2O3:W films. The TFT performance employing In2O3:W channels also seems to decline at high tungsten concentration. Negative and positive bias stress under (dark) ambient conditions of TFTs employing In2O3:W(0.1 at%) showed remarkable improvement in their stability characteristics compared to the un-doped ones. This is evidenced by significantly smaller changes of the threshold voltage and subthreshold swing with insignificant change of the electron mobility that was practically unaffected under negative bias voltage. The negative bias stress results were interpreted in terms of the higher W-O bond dissociation energy compared to that of In-O, and the consequent oxygen vacancy suppression. However the positive bias stability results in a reduced accumulation of electrons in the back channel due to atmospheric oxygen absorption. The results presented in this report demonstrate the potential for stable, low operational voltage, high performance metal oxide-based TFTs employing gate dielectrics also grown from solutions, at low manufacturing cost

    Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °C

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    This work investigates a solution process for yttria-stabilized zirconia (YSZ) thin film deposition involving the addition of yttria nanoparticles, at 400 ○C, in air. Different yttrium doping levels in the YSZ were studied and a wide range of optical, structural, surface, dielectric, and electronic transport properties were also investigated. An optimum yttrium doping level of 5% mol. resulted in the smoothest films (RRMS ∌ 0.5 nm), a wide bandgap (∌5.96 eV), a dielectric constant in excess of 26, and a leakage current of ∌0.3 nA cm−2 at 2 MV/cm. The solution-processed YSZ films were incorporated as gate dielectrics in thin films transistors with solution-processed In2O3 semiconducting channels. Excellent operational characteristics, such as negligible hysteresis, low operational voltages (5 V), electron mobility in excess of 36 cm2 V−1 s−1, high on/off current modulation ratio on the order of 107, and low interfacial trap density states (<1012 cm−2), were demonstrated. In addition, excellent film homogeneity was achieved over a large area (16 × 16 cm2), with both film thickness and capacitance deviation of <1.2%

    Egg Consumption and Risk of Type 2 Diabetes in Men and Women

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    OBJECTIVE—Whereas limited and inconsistent findings have been reported on the relation between dietary cholesterol or egg consumption and fasting glucose, no previous study has examined the association between egg consumption and type 2 diabetes. This project sought to examine the relation between egg intake and the risk of type 2 diabetes in two large prospective cohorts
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