NASA Tech Briefs Index, 1977, volume 2, numbers 1-4

Announcements of new technology derived from the research and development activities of NASA are presented. Abstracts, and indexes for subject, personal author, originating center, and Tech Brief number are presented for 1977

Critical design issues for gallium arsenide VLSI circuits.

The aim of this research was to design and evaluate various Gallium Arsenide circuit elements such as logic gates, adders and multipliers suitable for high speed VLSI circuits. The issues addressed are the logic gate design and optimisation, evaluation of various buffering schemes and the impact of the algorithm on adder and multiplier performance for digital signal processing applications. This has led to the development of a design approach to produce high speed and low power dissipation Gallium Arsenide VLSI circuits. This is achieved by : Evaluating the well established Direct Coupled Logic (DCFL) gates and proposing an alternative gate, namely the Source Follower DCFL (SDCFL), to improve the noise margin and speed. Suggesting various buffering schemes to maintain high speed in areas where the fanout loading is high (eg. clock drivers). Comparing various adder types in terms of delay-power and delay-area products to arrive at a suitable architecture for Gallium Arsenide implementation and to determine the influence of the algorithm and layout approach on circuit performance. To investigate this further, a multiplier was also designed to assess the performance at higher levels of integration. Applying a new layout approach, called the 'ring notation*, to the adder and multiplier circuits in order to improve their delay-area product. Finally, the critical factors influencing the performance of the circuits are reviewed and a number of suggestions are given to maintain reliable operation at high speed

4H-SiC Integrated circuits for high temperature and harsh environment applications

Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.Postprint (published version

Architectural Approaches For Gallium Arsenide Exploitation In High-Speed Computer Design

Continued advances in the capability of Gallium Arsenide (GaAs)technology have finally drawn serious interest from computer system designers. The recent demonstration of very large scale integration (VLSI) laboratory designs incorporating very fast GaAs logic gates herald a significant role for GaAs technology in high-speed computer design:1 In this thesis we investigate design approaches to best exploit this promising technology in high-performance computer systems. We find significant differences between GaAs and Silicon technologies which are of relevance for computer design. The advantage that GaAs enjoys over Silicon in faster transistor switching speed is countered by a lower transistor count capability for GaAs integrated circuits. In addition, inter-chip signal propagation speeds in GaAs systems do not experience the same speedup exhibited by GaAs transistors; thus, GaAs designs are penalized more severely by inter-chip communication. The relatively low density of GaAs chips and the high cost of communication between them are significant obstacles to the full exploitation of the fast transistors of GaAs technology. A fast GaAs processor may be excessively underutilized unless special consideration is given to its information (instructions and data) requirements. Desirable GaAs system design approaches encourage low hardware resource requirements, and either minimize the processor’s need for off-chip information, maximize the rate of off-chip information transfer, or overlap off-chip information transfer with useful computation. We show the impact that these considerations have on the design of the instruction format, arithmetic unit, memory system, and compiler for a GaAs computer system. Through a simulation study utilizing a set of widely-used benchmark programs, we investigate several candidate instruction pipelines and candidate instruction formats in a GaAs environment. We demonstrate the clear performance advantage of an instruction pipeline based upon a pipelined memory system over a typical Silicon-like pipeline. We also show the performance advantage of packed instruction formats over typical Silicon instruction formats, and present a packed format which performs better than the experimental packed Stanford MIPS format

Cutting Edge Nanotechnology

The main purpose of this book is to describe important issues in various types of devices ranging from conventional transistors (opening chapters of the book) to molecular electronic devices whose fabrication and operation is discussed in the last few chapters of the book. As such, this book can serve as a guide for identifications of important areas of research in micro, nano and molecular electronics. We deeply acknowledge valuable contributions that each of the authors made in writing these excellent chapters