1,629 research outputs found

    Micro-Resonators: The Quest for Superior Performance

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    Microelectromechanical resonators are no longer solely a subject of research in university and government labs; they have found a variety of applications at industrial scale, where their market is predicted to grow steadily. Nevertheless, many barriers to enhance their performance and further spread their application remain to be overcome. In this Special Issue, we will focus our attention to some of the persistent challenges of micro-/nano-resonators such as nonlinearity, temperature stability, acceleration sensitivity, limits of quality factor, and failure modes that require a more in-depth understanding of the physics of vibration at small scale. The goal is to seek innovative solutions that take advantage of unique material properties and original designs to push the performance of micro-resonators beyond what is conventionally achievable. Contributions from academia discussing less-known characteristics of micro-resonators and from industry depicting the challenges of large-scale implementation of resonators are encouraged with the hopes of further stimulating the growth of this field, which is rich with fascinating physics and challenging problems

    Controlling phonons and photons at the wavelength-scale: silicon photonics meets silicon phononics

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    Radio-frequency communication systems have long used bulk- and surface-acoustic-wave devices supporting ultrasonic mechanical waves to manipulate and sense signals. These devices have greatly improved our ability to process microwaves by interfacing them to orders-of-magnitude slower and lower loss mechanical fields. In parallel, long-distance communications have been dominated by low-loss infrared optical photons. As electrical signal processing and transmission approaches physical limits imposed by energy dissipation, optical links are now being actively considered for mobile and cloud technologies. Thus there is a strong driver for wavelength-scale mechanical wave or "phononic" circuitry fabricated by scalable semiconductor processes. With the advent of these circuits, new micro- and nanostructures that combine electrical, optical and mechanical elements have emerged. In these devices, such as optomechanical waveguides and resonators, optical photons and gigahertz phonons are ideally matched to one another as both have wavelengths on the order of micrometers. The development of phononic circuits has thus emerged as a vibrant field of research pursued for optical signal processing and sensing applications as well as emerging quantum technologies. In this review, we discuss the key physics and figures of merit underpinning this field. We also summarize the state of the art in nanoscale electro- and optomechanical systems with a focus on scalable platforms such as silicon. Finally, we give perspectives on what these new systems may bring and what challenges they face in the coming years. In particular, we believe hybrid electro- and optomechanical devices incorporating highly coherent and compact mechanical elements on a chip have significant untapped potential for electro-optic modulation, quantum microwave-to-optical photon conversion, sensing and microwave signal processing.Comment: 26 pages, 5 figure

    Design and modelling of solidly mounted resonators for low-cost particle sensing

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    This work presents the design and fabrication of Solidly Mounted Resonator (SMR) devices for the detection of particulate matter (PM2.5 and PM10) in order to develop a smart low-cost particle sensor for air quality. These devices were designed to operate at a resonant frequency of either 870 MHz or 1.5 GHz, employing zinc oxide as the piezoelectric layer and an acoustic mirror made from molybdenum and silicon dioxide layers. Finite element analysis of the acoustic resonators was performed using COMSOL Multiphysics software in order to evaluate the frequency response of the devices and the performance of the acoustic mirror. The zinc oxide based acoustic resonators were fabricated on a silicon substrate using a five mask process. The mass sensitivity of the acoustic resonators was estimated using a 3-D finite element model and preliminary testing has been performed. The theoretical and observed mass sensitivity were similar at ca. 145 kHz/ng for the 870 MHz resonator when detecting PM2.5 suggesting that SMR devices have potential to be used as part of a miniature smart sensor system for airborne particle detection.This work was funded under the European Commission 7th Framework Programme, Project No. 611887, ā€œMulti-Sensor-Platform for Smart Building Management: MSPā€. F.H.Villa-Lopez thanks the financial support from the National Mexican Council of Science and Technology (CONACYT). G. Rughoobur wishes to acknowledge financial support from the Cambridge Trusts.This is the author accepted manuscript. The final version is available from IOP via http://dx.doi.org/10.1088/0957-0233/27/2/02510

    RF MEMS reference oscillators platform for wireless communications

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    A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40ĖšC to 85ĖšC. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillatorā€™s integrated RMS jitter is 106 fs (10 kHzā€“20 MHz), consuming 850 Ī¼A, with startup time is 250Ī¼s, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075ĖšC. The smart temperature sensor consumes only 4.6 Ī¼A. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40ĖšC to 85ĖšC. The system is built on 32nm CMOS technology using 1.8V IO device

    An unreleased mm-wave resonant body transistor

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    In this work, we present the first fully unreleased Micro-Electro-Mechanical (MEM) resonator. The 1st harmonic longitudinal resonance of a silicon FinFET fully clad in SiO[subscript 2] is demonstrated. The device exhibits two resonances at 39 and 41 GHz, corresponding well with simulation results. The quality factor (Q) of 129 at 39 GHz is ~4Ɨ lower than that of its released counterpart. Methods to improve Q and reduce spurious modes are introduced. This first demonstration of unreleased resonators in a hybrid MEMS-CMOS technology can provide RF and microwave CMOS circuit designers with active high-Q devices monolithically integrated in Front-End-of-Line (FEOL) processing without the need for post-processing or special packaging.Microelectronics Advanced Research Corporation (MARCO)United States. Defense Advanced Research Projects Agenc

    Micro-nano biosystems: silicon nanowire sensor and micromechanical wireless power receiver

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    Silicon Nanowire-based biosensors owe their sensitivity to the large surface area to volume ratio of the nanowires. However, presently they have only been shown to detect specific bio-markers in low-salt buffer environments. The first part of this thesis presents a pertinent next step in the evolution of these sensors by presenting the specific detection of a target analyte (NT-ProBNP) in a physiologically relevant solution such as serum. By fabrication of the nanowires down to widths of 60 nm, choosing appropriate design parameters, optimization of the silicon surface functionalization recipe and using a reduced gate oxide thickness of 5 nm; these sensors are shown to detect the NT-ProBNP bio-marker down to 2ng/ml in serum. The observed high background noise in the measured response of the sensor is discussed and removed experimentally by the addition of an extra microfabrication step to employ a differential measurement scheme. It is also shown how the modulation of the local charge density via external static electric fields (applied by on-chip patterned electrodes) pushes the sensitivity threshold by more than an order of magnitude. These demonstrations bring the silicon nanowire-based biosensor platform one step closer to being realized for point-of-care (POC) applications. In the second half of the thesis, it is demonstrated how silicon micromechanical piezoelectric resonators could be tasked to provide wireless power to such POC bio-systems. At present most sensing and actuation platforms, especially in the implantable format, are powered either via onboard battery packs which are large and need periodic replacement or are powered wirelessly through magnetic induction, which requires a proximately located external charging coil. Using energy harnessed from electric fields at distances over a meter; comprehensive distance, orientation, and power dependence for these first-generation devices is presented. The distance response is non-monotonic and anomalous due to multi-path interferences, reflections and low directivity of the power receiver. This issue is studied and evaluated using COMSOL Multiphysics simulations. It is shown that the efficiency of these devices initially evaluated at 3% may be enhanced up to 15% by accessing higher frequency modes

    Probing multivalent particleā€“surface interactions using a quartz crystal resonator

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    The rise in market-approved cellular therapies demands for advancements in process analytical technology (PAT) capable of fulfilling the requirements of this new industry. Unlike conventional biopharmaceuticals, cell-based therapies (CBT) are complex ā€œliveā€ products, with a high degree of inherent biological variability. This exacerbates the need for in-process monitoring and control of critical product attributes, in order to guarantee safety, efficacious and continuous supply of this CBT. There are therefore mutual industrial and regulatory motivations for high throughput, non-invasive and non-destructive sensors, amenable to integration in an enclosed automated cell culture system. While a plethora of analytical methods is available for direct characterization of cellular parameters, only a few satisfy the requirements for online quality monitoring of industrial-scale bioprocesses. [Continues.

    Resonant body transistors in standard CMOS technology

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    This work presents Si-based electromechanical resonators fabricated at the transistor level of a standard SOI CMOS technology and realized without the need for any postprocessing or packaging. These so-called Resonant Body Transistors (RBTs) are driven capacitively and sensed by piezoresistively modulating the drain current of a Field Effect Transistor (FET). First generation devices operating at 11.1-11.5 GHz with footprints of 3Ī¼mƗ5Ī¼m are demonstrated. These unreleased bulk acoustic resonators are completely buried within the CMOS stack and acoustic energy at resonance is confined using Acoustic Bragg Reflectors (ABRs). The complimentary TCE of Si/SiO[subscript 2] in the resonator and the surrounding ABRs results in a temperature stability TCF of <;3 ppm/K. Comparative behavior of devices is also discussed to analyze the effect of fabrication variations and active sensing.United States. National Security Agency. Trusted Access Program OfficeUnited States. Defense Advanced Research Projects Agency. Leading Edge Access ProgramIBM Researc
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